Study of taox based resistive random access memory

... STUDY OF TaOX- BASED RESISTIVE RANDOM ACCESS MEMORY WU WENJUAN A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ... 1.2.2          Resistive Random Access Memory Working Principle and Switching Modes 6  1.2.3          Classification of Resistive Random Access Memory 7  1.2.3.1 Classification Bas...

Ngày tải lên: 02/10/2015, 17:13

... addresses the scaling limitations of the Phase Change Random Access Memory (PCRAM) that is considered as one of the best candidates for meeting the scaling requirements for the next wave of memory ... paid to the physical limitations of the materials and the current limitation of memory cells in subsequent chapters The physical limitations of...

Ngày tải lên: 11/09/2015, 16:04

... (Conventional Memory) , Bộ nhớ mở rộng (Extended Memory) , Bộ nhớ bành trướng (Expanded Memory) , Vùng nhớ trên(Upper Memory Area), Vùng nhớ cao (High Memory Area) Bộ nhớ quy ước (Conventional Memory) : ... thời chuyển động xuyên qua lớp cách điện IX.Flash Memory Flash memory thật memory (chứa thông tin, đọc xoá được) điển hình cuả memory RAM Do flash memory gọi flash RAM Fl...

Ngày tải lên: 25/04/2013, 19:25

... Conclusions The sensing materials of WO loaded with wt.% metal oxides were prepared and applied for NH and NO detection, and several composition materials with good responses, both to NH and NO, were ... NO. , and fast response to NH and NO compared with pure WO The materials of WO loaded with wt.% Cr, La, Pr, Sm, Gd, Er, Tm and Yb showed good responses to N...

Ngày tải lên: 20/03/2014, 13:08

... 1219–1235, 2004 [22] E Christophe and W A Pearlman, Three-dimensional SPIHT coding of hyperspectral images with random access and resolution scalability,” in Proceedings of the 40th Annual Asilomar ... minimum amount of bits spectral dimensions independently and random access decoding These properties are important to ease of access and processing of the...

Ngày tải lên: 22/06/2014, 00:20

... Phân loại RAM Tùy theo công nghệ chế tạo, người ta phân biệt thành loại:   SRAM (Static RAM) : RAM tĩnh DRAM (Dynamic RAM) : RAM động RAM tĩnh transistor ô nhớ RAM tĩnh RAM tĩnh chế tạo ... nhớ DRAM chậm rẻ tiền SRAM Các loại DRAM Card RAM MB máy tính VAX 8600 sản xuất năm 1986 Các chip RAM nằm vào vùng chữ nhật bên trái bên phải SDRAM (Viết tắt từ Synchronous Dynamic RAM...

Ngày tải lên: 29/07/2014, 03:20

... SEMICONDUCTOR MEMORIES 1.2 PHASE CHANGE RANDOM ACCESS MEMORY 1.2.1 Phase- change materials 1.2.2 Principles of Phase change random access memory 10 1.2.3 RESET current ... cost per bit Maturity 1.2 Phase change random access memory 1.2.1 Phase- change materials Phase- change materials can exist in the amorphous or crystalline phases The two phases diffe...

Ngày tải lên: 09/09/2015, 10:07

... Perpendicular Magnetic Anisotropy Materials for Magnetic Random Access Memory Applications by TAIEBEH TAHMASEBI A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... spin-transfer-torque magnetic random access memory (STT-MRAM) Finally, we also give a brief review on different magnetic materials with perpendicular anisotropy that could be used in...

Ngày tải lên: 09/09/2015, 10:14

... THEORETICAL STUDY OF CARBON- BASED MATERIALS AND THEIR APPLICATIONS IN NANOELECTRONICS KAI-TAK LAM A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILIOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ... vii in obtaining GNRs by unzipping carbon nanotubes has made the prospect of fabricating GNR -based electronic devices in large quantities more promising an...

Ngày tải lên: 10/09/2015, 08:39

... 122 v 7.1.1 Multi- level dual layered Phase Change Memory Devices with a NGST/Ta2O5/GST Stack …………………… …122 7.1.2 Multi- level phase change memory devices with Si3 N4 or Ta2O5 barrier layers …………………………………….123 ... of phase change materials for two-bit multi- level devices ………………………………………………… 78 4.4 Chapter Summary ……………………………………………………… 78 Two-bit Multi-...

Ngày tải lên: 10/09/2015, 09:21

... C ONTENTS Introduction A Theoretical Foundation for Random Walks and Hitting Times 2.1 Understanding Random Walks on Graphs in the Context of Markov Chains 2.2 Interpreting Hitting Times as a ... we construct a rigorous framework that both supports natural observations about random walks on graphs and allows us to move toward our goal of calculating exp...

Ngày tải lên: 21/09/2015, 21:23

... Respondents in Japan and Singapore Table 4.2: Characteristics of Companies in Japan and Singapore Table 4.3: Project Characteristics in Japan and Singapore Table 4.4: Project Success Rated by Respondents ... than those in Singapore, and Japan also had a larger share of male project managers Thirdly, the findings of this study also reveal that J...

Ngày tải lên: 26/09/2015, 10:05

... to magnetic properties, semiconductors can be classified as magnetic semiconductors, dilute magnetic semiconductors, and non -magnetic semiconductors in terms of the amount and distribution of magnetic ... Diluted magnetic semiconductors (DMS), alloys between nonmagnetic semiconductors and magnetic elements, are semiconductors formed by replacing a fraction of...

Ngày tải lên: 01/10/2015, 17:27

... Assembly on Chinese Education, Singapore: F.S Horslin, Government Printer, 1 956 Chinese Language Review Committee Chinese Language Teaching and Learning in Singapore: Report of Chinese Language ... Commission of Inquiry into Education Singapore; Final Report, Singapore: commission of inquiry into education, 1964 Singpapore Ministry of Education, Speeches ―Minist...

Ngày tải lên: 13/10/2015, 15:56

... 中学从选材开始就让该校的校本课程与规定课程之间的界线泾渭分明。 11 此个案参见 Macklin, Pamela School- based curriculum development : does it work?”, Jolimont: Incorporated Association of Registered Teachers, 20 04 12 同上。 49 2.2 以日常生活语料为题材 与培侨中学一样在选材上颇下功夫的，还有新加坡的新民中学，规定课程制作 ... 刘彩凤〈关于提高校本课程实效性的反思〉，见《华文老师》第 50 期，...

Ngày tải lên: 13/10/2015, 15:56