Gate stack engineering of germanium mosfets with high k dielectrics

... gate oxide thickness (tox) * tox=thigh -k* kSiO2/khigh -k, where thigh -k and khigh -k are the physical thickness and the effective relative permittivity of the high- k dielectric, Chapter 1: Introduction ... Copel, M.A Gribelyuk, H Okorn-Schmidt, C D’Emic, P Kozlowski, K Chan, N Bojarczuk, L.-A Ragnarsson, P Ronsheim, K Rim, R.J Fleming, A Mocuta, A Ajmera, “Ultrathin high- k...

Ngày tải lên: 15/09/2015, 17:09

... Shang, K. -L Lee, P Kozlowski, C D Emic, I Babich, E Sikorski, M Ieong, H.-S P Wong, K Guarini, and W Haensch, “Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and ... Microprobe with a monochromatic and standard Al X-ray source 27 Chapter 2: Germanium MOS Device with High- κ Gate Dielectric 2.3 Results and discussion 2.3.1...

Ngày tải lên: 14/09/2015, 11:29

... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...

Ngày tải lên: 03/10/2015, 20:31

... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...

Ngày tải lên: 12/10/2015, 17:36

... HIFU energy and pancreas histology, a preclinical in vivo study was conducted in swine demonstrating the feasibility and safety of HIFU for pancreas ablation [13] In the present study, we aimed to ... In the Group A, laparotomy was performed, and the pancreas was ablated directly through the surface of the pancreas with an HIFU transducer In the Grou...

Ngày tải lên: 25/10/2012, 11:18

... solicit English translations of Urdu sentences from non-professional translators, and show that translation quality can rival that of professionals, for a fraction of the cost Lei and Hansen (2011) ... sentences of some random set, on a single HTML page For each sentence, they indicate the level of dialectal Arabic, and which dialect it is (if any) We offer a reward of $0.05 pe...

Ngày tải lên: 20/02/2014, 04:20

... distribution, and reproduction in any medium, provided the original work is properly cited Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge ... epi -GaAs MOS capacitors were fabricated and characterized using electrical and physical analysis Atomic layer-deposited TiO2/Al2O3 gate...

Ngày tải lên: 20/06/2014, 20:20

... the case of our patient The literature, however, consists of cases supporting the long-term administration of ciprofloxacin monotherapy in bone infections caused by Pseudomonas after an initial ... population remained basically unchanged Discussion The huge number of anaerobes in the human gut microflora prevents its colonisation and the invasion of tissues by exogenous path...

Ngày tải lên: 11/08/2014, 12:20

... integrate high permittivity/dielectric-constant (high- к) gate dielectrics on Ge-rich compressively-strained SiGe channels with high hole mobility and pure germanium channels with both high electron ... TaN/HfO2/ε-Si0.6Ge0.4 pMOSFETs without or with RTN, with PMA at 850 ºC for 15 seconds 90 Figure 5.6 5.6 (A) output and (B) transfer characteristics of TaN/HfO2/ε-Si0.6Ge0.4...

Ngày tải lên: 14/09/2015, 12:22

... SCHOTTKY SOURCE/ DRAIN TRANSISTOR INTEGRATED WITH HIGH- K AND METAL GATE FOR SUB- TENTH NM TECHNOLOGY LI RUI (B Sc., Univ of Science and Technology of China, CHINA) A THESIS SUBMITTED FOR THE ... integration of germanide Schottky source/ drain Ge channel MOSFET with high- k gate dielectric and metal gate for sub- tenth nm technology...

Ngày tải lên: 14/09/2015, 14:04

... etching process can be used for metal gate integration using the AlN layer Although a wider range of work function was obtained using FUSI HfSi gate on SiO2, more study HfSi gate on high- K dielectric ... several gate dielectrics has been explained using experimental data in conjunction with interface dipole theory [1.52] The work function of polysilicon gates on high- K,...

Ngày tải lên: 16/09/2015, 08:31

... that of the direct tunneling leakage current of 13 - 20 Å at its initial unstressed state higher than that of post-QB leakage in thicker oxides Due to this high gate leakage for ultra- thin oxides, ... Device Scaling and Dielectric Performance 23 2.5 Ultra- thin oxide Reliability 24 2.6 High- K Dielectrics Reliability 27 2.6.1 High- K charge trapping 28 2.6.2...

Ngày tải lên: 16/09/2015, 17:12

... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Al...

Ngày tải lên: 16/10/2015, 15:37

... (EOT) [17] The impact of the polycrystallization of the Al O layer on the electrical conduction of the gate stack has been analyzed at the nanoscale from current and CPD images obtained on fresh ... strength of the grain boundaries Finally, the influence of the environment conditions on the study of polycrystalline high-k dielectrics was also anal...

Ngày tải lên: 21/06/2014, 06:20

... proteins in the spleen There was no significant difference in AQP1 expression between the HK and LK tissues examined (Fig 2A) In this report, we investigated the expression of AQP1 in canines possessing ... in high K+ dog erythrocytes associated with high activity of (Na+, K+) -ATPase J Biol Chem 19 84, 259, 312 - 317 Inaba M, Maede Y Inherited persistence o...

Ngày tải lên: 07/08/2014, 20:23