Strain engineering for advanced transistor structure

... STRAIN ENGINEERING FOR ADVANCED TRANSISTOR STRUCTURE TAN KIAN MING (B ENG (HONS.)), NUS (M ENG.), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... can induce strain in the transistor channel [2.2], and the localized strain could be exploited to enhance the performance of aggressively scaled transistors While many approaches to strained-Si ... to investigat...

Ngày tải lên: 14/09/2015, 14:13

... STRAIN ENGINEERING FOR ADVANCED SILICON, GERMANIUM AND GERMANIUM- TIN TRANSISTORS CHENG RAN (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... Transistors 69 4.1.2 Strain Engineering for Ge P-channel MOSFETs (pMOSFETs) 71 4.2 4.3 Key Concept: Exploiting Ge2Sb2Te5 for Strain Engineering 73 Stress Simulation and ... Ge Trimmi...

Ngày tải lên: 09/09/2015, 11:28

... STRAIN ENGINEERING FOR ADVANCED SILICON TRANSISTORS DING YINJIE (B.Eng.(Hons.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ... 1.2   Strained Si Transistor Technology 3  1.3   Strain Effects on Carrier Mobility 6  1.4   Strain Engineering for Advanced Transistor Architectures 16  1.4.1   Strain...

Ngày tải lên: 10/09/2015, 09:26

... never be forgotten Thank you for your love and devotion ii High Mobility III- V Compound Semiconductors For Advanced Transistor Applications Acknowledgements i Table of Contents iii Abstract vi ... s V Voltage V Vbase Base voltage of trapezoidal pulse V VDS or VD Drain voltage V VFB Flatband voltage V VGS or VG Gate voltage V VT Threshold voltage V vth The...

Ngày tải lên: 11/09/2015, 10:01

... Abstract Contact and Source/ Drain Engineering for Advanced III- V Field- Effect Transistors By Kong Yu Jin, Eugene Doctor of Philosophy – Electrical and Computer Engineering National University ... metallization V Voltage Vd Voltage or bias applied to the drain of a MOSFET Vdd Supply voltage Vg Voltage or bias applied to the gate of a MOSFET Vt,sat Saturation thr...

Ngày tải lên: 30/09/2015, 05:43

... thickness nm Tox Equivalent oxide thickness nm VFB Flatband voltage V Gate voltage V Threshold voltage V RIII -V RNi-InGaAs VG VT or VT' ' xxiii ∆VT Threshold voltage shift V W Contact width μm Weff ... Abstract Self- Aligned Source and Drain Contact Engineering For High Mobility III- V Transistor by ZHANG Xin Gui Doctor of Philosophy – Electrical and Comp...

Ngày tải lên: 09/09/2015, 10:14

... SCHOTTKY BARRIER ENGINEERING FOR CONTACTS IN ADVANCED CMOS TECHNOLOGY PHYLLIS LIM SHI YA (B ENG (HONS.)), NATIONAL UNIVERSITY OF SINGAPORE A THESIS SUBMITTED FOR THE DEGREE OF ... in CMOS technology 14 1.6 Modulation of Schottky barrier height 16 1.6.1 S/D material engineering 16 1.6.2 Dopant segregation engineering 17 1.6.3 Interface engineering ... of Ge...

Ngày tải lên: 09/09/2015, 10:21

... ADVANCED CONTACT ENGINEERING FOR SILICON, GERMANIUM, GERMANIUM- TIN DEVICES TONG YI (M Eng.), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ... on contact engineering for Si, Ge, and GeSn devices Low contact resistance is needed for advanced Si based devices and also new generation of Ge or GeSn base...

Ngày tải lên: 09/09/2015, 11:07

... DEFECT ENGINEERING IN THE FORMATION OF ULTRA- SHALLOW JUNCTIONS FOR ADVANCED NANO- METAL- OXIDESEMICONDUCTOR TECHNOLOGY YEONG SAI HOOI (B Eng (Hons.), NUS) A THESIS SUBMITTED FOR THE DEGREE OF ... USJs for the application in nano- CMOS devices through the understanding and maneuvering of dopant -defect interactions, known as defect engineering T...

Ngày tải lên: 11/09/2015, 09:58

... ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR MULTIPLE- GATE TRANSISTORS RINUS TEK PO LEE A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILIOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ... 161 vi Abstract Advanced Source and Drain Contact Engineering for Multiple- Gate Transistors by Rinus Tek Po Lee Doctor of Philosophy − Electric...

Ngày tải lên: 15/09/2015, 21:48

... ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR LOW PARASITIC SERIES RESISTANCE KOH TIAN YI, ALVIN (B.ENG (HONS.), NUS) A THESIS SUBMITTED FOR THE DEGREE OF MASTER ENGINEERING DEPARTMENT ... Annealing on Silicon-Carbon Source/ Drain in MuGFETs 5.2 83 84 Future Work 85 Appendix A: Publication List 86 v Advanced Source/ Drain Contact Engineering For Lo...

Ngày tải lên: 26/09/2015, 11:07

Ngày tải lên: 06/08/2013, 01:25

... acceleration a ball- screw can use with out getting ball skid? A: A general rule of thumb is to calculate the ball nut critical speed based on dN = 3000 for inch series ball nuts and dN = 140,000 for metric ... What are the key design criteria to establish a servo drive driven ball screw assembly for stiffness? The ball screw drive has been the largest "spring element" when...

Ngày tải lên: 13/12/2013, 01:16

... other optimization approach is as intelligent and effective as Fiksu Optimization The Fiksu Platform’s integrated and automated approach to attribution, optimization and media buying helps app marketers ... www.fiksu.com/ebooks The Characteristics of High-Performance Optimization App marketers who need to deliver measurable results have identified characteristics of high-perfo...

Ngày tải lên: 07/01/2014, 15:56

... Ordering Information Dimensions (H x W x D) Description Catalog Number Megabit Modem 410F 1.2 x 6.9 x 9.2 in (3.1 x 17.5 x 23.4 cm) MM410F-x* Megabit Modem 420F 1.2 x 6.9 x 9.2 ... power supply for European use, UK/Ireland power cord SPECIFICATIONS Physical Specifications Weight: 2.2 lbs (1.0 kg) Power LAN: Link, Tx, Rx, Collision ADSL: Sync, Tx, Rx, Margin LAN Interface: ... di...

Ngày tải lên: 17/01/2014, 10:20