Development and characterization of high k dielectric germanium gate stack

... the high- k material in consideration EOT is given by tox  thigh  k  kSiO2 / khigh  k , where thigh  k and khigh  k are the physical thickness and relative dielectric constant of high- k dielectric, ... density Jg Gate leakage current density k Dielectric constant (relative permittivity) kGe Dielectric constant of Ge (relative permittivity) khigh -k Di...

Ngày tải lên: 14/09/2015, 08:25

... retention performance of nanocrystal memory through the use of high dielectric constant tunnel barriers and trap engineering By using a crested barrier structure as the tunnel barrier, a high electric ... xiv List of Tables Table 4-1: Comparison of the |Vprog/Vret| ratio of MIS structures with Al gate and Si substrate using (a) crested tunnel barriers and (b)...

Ngày tải lên: 16/09/2015, 15:53

... The nanosheet structure after calcinations was destroyed and changed to nanorods/nanoparticles composite at high temperature [27,30] Conclusions In summary, high surface area nanosheet TiO2 with ... diameter and about 5–10 nm in particles diameter, Fig 6(a–f)) The SEM, TEM, and SAED images of the nanosheet TiO2 calcined at 600 and 700 °C showed almost nanoparticles...

Ngày tải lên: 20/03/2014, 13:06

... induction of CNS disease Mankowski and colleagues demonstrated the primacy of the envelope gene in neurovirulence in the development of SIV/17E-Fr, and examination of this clone by Flaherty and colleagues ... new, brain-adapted genotype of SIV with a unique phenotype of infection Further study of this genotype and its unique phenotype, both alone and in comparison...

Ngày tải lên: 19/06/2014, 08:20

... induction of CNS disease Mankowski and colleagues demonstrated the primacy of the envelope gene in neurovirulence in the development of SIV/17E-Fr, and examination of this clone by Flaherty and colleagues ... new, brain-adapted genotype of SIV with a unique phenotype of infection Further study of this genotype and its unique phenotype, both alone and in comparison...

Ngày tải lên: 20/06/2014, 04:20

... the 3D wavelet transform, Kutil and Uhl have conducted a study of the software and hardware needs of the 3D wavelet transform [14] They have centered their study on the classic wavelet transform ... speed-up, and the quality of the signal 2.3 GOF-based 3D- WT One of the major challenges to overcome when computing the 3D- WT has to with the developm...

Ngày tải lên: 22/06/2014, 19:20

... al.: Generation and characterization of high affinity human monoclonal antibodies that neutralize staphylococcal enterotoxin B Journal of Immune Based Therapies and Vaccines 2010 8:9 Submit your ... HuMAbs neutralize SEB-induced cytokine production by human lymphocytes To examine the biological activity of HuMAbs in vitro, a cell-based assay was employed t...

Ngày tải lên: 11/08/2014, 08:21

... frequency and distribution of SSRs in castor bean ESTs, (2) the establishment and validation of EST- SSR markers for detection of polymorphism in castor bean, and (3) the assessment of genetic ... an increasing need for distinguishing the varieties reliably, establishing their purity, and fingerprinting released varieties, hybrids and the parental l...

Ngày tải lên: 11/08/2014, 11:21

... Flash Memory Devices 1.2 Flash Memory Devices Among various non- volatile memory devices, floating gate (FG) type flash memory devices are the core of every modern non- volatile semiconductor memory ... newer applications Thanks to the characteristics of non- volatile memory, it offers a wide range of applications from industrial computers to consumer hand...

Ngày tải lên: 11/09/2015, 09:16

... EOT = ε SiO T ε high − k high − k , phy (2-3) where EOT is the Equivalent Oxide Thickness of high- k dielectric, εSiO2 and high- k are the permittivity of SiO2 (3.9) and the high- k dielectrics, ... and Thigh -k, phy is the physical thickness of the high- k film In searching suitable high- κ dielectric materials for MIM capacitors, a simple criterion is h...

Ngày tải lên: 12/09/2015, 11:24

... Microwave Processing of Materials, Singapore Development and Characterization of New Magnesium Based Nanocomposites xix Development and Characterization of New Magnesium Based Nanocomposites CHAPTER ... Cabbibo and E Evangelista, Mater Sci Eng A, 462 (2007) 225-229 Development and Characterization of New Magnesium Based Nanocomposites 10 De...

Ngày tải lên: 14/09/2015, 08:44

... investigation Another exploration of high- k dielectrics for SONOS type memory is to use highk dielectrics as charge storage layer instead of nitride The potential advantages of high- k charge storage ... the formation of NCs, device integration, and the memory performance The implementation of high- k dielectric instead of SiO2 brings additional advantage...

Ngày tải lên: 14/09/2015, 13:32

... Enhancements for Backside FA Immersion lens technology has proven to be an effective solution There are two types of immersion lens technology to date namely, Liquid Immersion Lens (LIL) [45] and Solid Immersion ... concentrations and (b) p-Si doped at 1019 cm-3 for different Si thickness Quantum Efficiency of typical Si-CCD, MCT and InGaAs FPAs Liquid Immer...

Ngày tải lên: 30/09/2015, 06:19

... detection of GFP-BlaR and GAPDH genes 47 iii 2.4.5 Sequencing of SARS- CoV replicon and sub -replicon RNAs RESULTS 48 50 3.1 Generation of SARS- CoV replicon RNA 51 3.2 Generation and analysis of SARS- CoV ... project was to construct a cell line carrying a SARS coronavirus (SARS- CoV) replicon, which is incapable of producing viral particles First, partia...

Ngày tải lên: 04/10/2015, 15:46

... DEVELOPMENT AND CHARACTERIZATION OF MULTI- MATERIAL PRINTING OF THE DROP- ON- DEMAND (DOD) SYSTEM NG JINHHAO (B.Eng (Hons.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING ... and fabricated to meet the requirements of these new applications Drop- on- Demand (DOD) inkjet printing is thought to be one of the promising method...

Ngày tải lên: 04/10/2015, 15:46