Extending si CMOS ingaas and gesn high mobility channel transistors for future high speed and low power applications

Extending si CMOS ingaas and gesn high mobility channel transistors for future high speed and low power applications

Extending si CMOS ingaas and gesn high mobility channel transistors for future high speed and low power applications

... EXTENDING SI CMOS: INGAAS AND GESN HIGH MOBILITY CHANNEL TRANSISTORS FOR FUTURE HIGH SPEED AND LOW POWER APPLICATIONS GONG XIAO A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... Summary Extending Si CMOS: InGaAs and GeSn High Mobilty Channel Transistors for Future High Speed and Low Power Logic Application by GONG Xiao Doctor o...
Ngày tải lên : 12/09/2015, 11:24
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Study on high mobility channel transistors for future sub 10 nm CMOS technology

Study on high mobility channel transistors for future sub 10 nm CMOS technology

... STUDY ON HIGH MOBILITY CHANNEL TRANSISTORS FOR FUTURE SUB- 10 nm CMOS TECHNOLOGY Fei GAO (B Eng, Xi’an Jiaotong University, PR CHINA) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... strained high- Ge concentration SGOI is successfully demonstrated by two-step oxidation of sputtered low Ge content α-SiGe (amorphous SiGe) on a SOI substrate Compared with convention...
Ngày tải lên : 12/09/2015, 08:16
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Design and implementation of a high speed and low power flash ADC with fully dynamic comparators

Design and implementation of a high speed and low power flash ADC with fully dynamic comparators

... DESIGN AND IMPLEMENTATION OF A HIGH SPEED AND LOW POWER FLASH ADC WITH FULLY DYNAMIC COMPARATORS LI TI A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ... comparator design assumes such a pivotal position in conventional flash ADC design that its importance can hardly be overstated Chapter Overview of...
Ngày tải lên : 04/10/2015, 10:26
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Advanced silicon and germanium transistors for future p channel MOSFET applications

Advanced silicon and germanium transistors for future p channel MOSFET applications

... etch recipes for poly Si gate etch (main etch for removing poly Si in planar region) and poly Si spacer removal etch (over etch step) The poly Si over etch recipe employs HBr and smaller power to ... compares material characteristics of potential channel materials for future CMOS applications, showing 10 Table 1.1 Material characteristics of potential channel materials for...
Ngày tải lên : 08/09/2015, 17:50
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DESIGN OF ENERGY EFFICIENT WEARABLE ECG SYSTEM AND LOW POWER ASYNCHRONOUS MICROCONTROLLER

DESIGN OF ENERGY EFFICIENT WEARABLE ECG SYSTEM AND LOW POWER ASYNCHRONOUS MICROCONTROLLER

... background of the ECG and asynchronous circuit design Chapter and elaborates Wireless ECG Plaster and Long Playing Cardio Recording system individually In Chapters 5, the wearable ECG system comparison ... reduce the power consumption for wearable ECG system, a new design of 3.3V to 1.0V voltage-scalable asynchronous 8051 Microcontroller is presented The...
Ngày tải lên : 02/10/2015, 17:14
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DESIGN OF ENERGY EFFICIENT WEARABLE ECG SYSTEM AND LOW POWER ASYNCHRONOUS MICROCONTROLLER

DESIGN OF ENERGY EFFICIENT WEARABLE ECG SYSTEM AND LOW POWER ASYNCHRONOUS MICROCONTROLLER

... background of the ECG and asynchronous circuit design Chapter and elaborates Wireless ECG Plaster and Long Playing Cardio Recording system individually In Chapters 5, the wearable ECG system comparison ... reduce the power consumption for wearable ECG system, a new design of 3.3V to 1.0V voltage-scalable asynchronous 8051 Microcontroller is presented The...
Ngày tải lên : 04/10/2015, 15:45
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Advanced transistors for supply voltage reduction tunneling field effect transistors and high mobility MOSFETS

Advanced transistors for supply voltage reduction tunneling field effect transistors and high mobility MOSFETS

... ADVANCED TRANSISTORS FOR SUPPLY VOLTAGE REDUCTION: TUNNELING FIELD- EFFECT TRANSISTORS AND HIGH- MOBILITY MOSFETS GUO PENGFEI (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE ... tr Rise time s V Voltage V Va Voltage amplitude V Vbase Base level voltage V VDD Supply voltage V VDS Drain voltage V VFB Flatband voltage V VGS V VTH Gate voltage Max...
Ngày tải lên : 10/09/2015, 09:01
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Development of high mobility channel layer formation technology for high speed CMOS devices

Development of high mobility channel layer formation technology for high speed CMOS devices

... DEVELOPMENT OF HIGH MOBILITY CHANNEL LAYER FORMATION TECHNOLOGY FOR HIGH SPEED CMOS DEVICES OH Hoon Jung (B Sc., Ewha Womans University, Korea) ... the use of new gate stack materials Thus this work of development of high mobility channel layer formation technology has been carried out for the innovative change The subsequent sections in ... pro...
Ngày tải lên : 11/09/2015, 10:00
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Metal gate with high k dielectric in si CMOS processing

Metal gate with high k dielectric in si CMOS processing

... etching process can be used for metal gate integration using the AlN layer Although a wider range of work function was obtained using FUSI HfSi gate on SiO2, more study HfSi gate on high- K dielectric ... several gate dielectrics has been explained using experimental data in conjunction with interface dipole theory [1.52] The work function of polysilicon gates on high- K,...
Novel III v mosfet integrated with high k dielectric and metal gate for future CMOS technology

Novel III v mosfet integrated with high k dielectric and metal gate for future CMOS technology

... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Al...
Ngày tải lên : 16/10/2015, 15:37
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High-Speed WLANs and WLAN Security

High-Speed WLANs and WLAN Security

... bands – Each band has a maximum power limit • Outside the United States – GHz band is allocated to users and technologies other than WLANs U-NII Frequency Band (continued) U-NII Frequency Band ... phase shift keying (BPSK) 16 Other WLAN Standards • Future of WLANs will include: – Additional standards that are currently under development by the IEEE – New standards that are just beginn...
Ngày tải lên : 13/09/2012, 10:52
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Nghiên cứu xúc tiến bán  của tập đoàn bán sỉ Metro Cash and Carry Việt Nam

Nghiên cứu xúc tiến bán của tập đoàn bán sỉ Metro Cash and Carry Việt Nam

... bán Metro Cash & Carry Việt Nam Phẩn3: Đề xuất giải pháp hoạt động xúc tiến bán cho Metro Cash & Carry Việt Nam Chương I Những vấn đề lý luận xúc tiến bán 1.1 LÝ LUẬN CƠ BẢN CỦA XÚC TIẾN BÁN ... trình trước tiến hành thực thi, cuối đánh giá kết đạt 11 12 CHƯƠNG II CÁC HOẠT ĐỘNG XÚC TIẾN BÁN CỦA METRO CASH& CARRY VIỆT NAM 2.1 Tổng quan công ty TNHH...
Improvement of Water Quality by Removal of Suspended Solids and High-speed Biological Filtration in Closed Water Body

Improvement of Water Quality by Removal of Suspended Solids and High-speed Biological Filtration in Closed Water Body

... arrangements of flow third tank Figure Schematic diagram for improvement of water quality by removal of SS and biological filtration in closed water bodies a a: screw motor M b: biological carrier ... Water and Environment Technology, Vol.1, No.2, 2003 Conclusion The experiment on improving water quality was carried out by removal of SS and biol...
Ngày tải lên : 05/09/2013, 08:40
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Tài liệu Hệ thống phân phối sỉ Metro Cash and Carry Việt Nam doc

Tài liệu Hệ thống phân phối sỉ Metro Cash and Carry Việt Nam doc

... Chương II: Phân tích hoạt động phân phối sỉ Metro Cash and CarryViệt Nam 1/ Giới thiệu công ty TNHH Metro Cash and Carry Việt Nam Tên công ty: Công ty TNHH Metro Cash and Carry Việt Nam Văn phòng ... chức hệ thống phân phối 14 6.1 Hoạt động kênh phân phối .14 6.2 Mâu thuẫn phát sinh hệ thống phân phối 22 CHƯƠNG II: Phân tích hoạt đ...
Ngày tải lên : 18/02/2014, 22:20
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Tài liệu ECONOMIC, ENVIRONMENTAL AND ENERGY ASSESSMENT OF THE TURIN-LYON HIGH-SPEED RAIL pdf

Tài liệu ECONOMIC, ENVIRONMENTAL AND ENERGY ASSESSMENT OF THE TURIN-LYON HIGH-SPEED RAIL pdf

... fruitful ways of investing public (and private) money RESULTS The energy cost-benefit analysis One of the main ecological justifications of the HSR projects would be the energy savings and the expected ... partridges and wolves) and a very rich diversity of flower The first HSR proposal dates back to the end of the eighties, and soon after the oppositi...
Ngày tải lên : 20/02/2014, 19:20
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