Advanced silicon and germanium transistors for future p channel MOSFET applications
Advanced silicon and germanium transistors for future p channel MOSFET applications
... etch recipes for poly Si gate etch (main etch for removing poly Si in planar region) and poly Si spacer removal etch (over etch step) The poly Si over etch recipe employs HBr and smaller power to ... compares material characteristics of potential channel materials for future CMOS applications, showing 10 Table 1.1 Material characteristics of potential channel materials for...
Báo cáo hóa học: " Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results" pptx
... HOMO and LUMO states for the pure and alloyed 32-atoms NCs Due to the Td symmetry of the initial systems, the HOMO state forms a degenerate triplet before the relaxation, and therefore, for a ... (NCs) embedded in wide band gap SiO2 matrices, and free-standing SiGe mixed nanowires (NWs) These systems have been chosen for their application in photovoltaics, and therefore our re...
Extending si CMOS ingaas and gesn high mobility channel transistors for future high speed and low power applications
... EXTENDING SI CMOS: INGAAS AND GESN HIGH MOBILITY CHANNEL TRANSISTORS FOR FUTURE HIGH SPEED AND LOW POWER APPLICATIONS GONG XIAO A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... Summary Extending Si CMOS: InGaAs and GeSn High Mobilty Channel Transistors for Future High Speed and Low Power Logic Application by GONG Xiao Doctor o...
Nature of the band gap of silicon and germanium nanowires
... Fig Band structure of (1 0), (1 0) and (1 1) Ge nanowires with D$20 A of the band gap and determines the overall nature of the nanowire band structure Si (100) Ge (100) where mà and mà are the ... towards the G2X bulk band gap The Ge nanowires converge towards different band gaps: (1 0) towards the G2L gap, whereas (1 0) and (1 1) nanowires c...
First principles optical properties of silicon and germanium nanowires
... models Optical properties of SiNWs and GeNWs In Section of the present paper, we aim to point out the importance of the many-body effects on the optical response of some of the studied nanowires ... [41] Optical gaps in SiNWs and GeNWs: quantum confinement and anisotropy effects In this section, we will describe the electronic properties of hydrogen passivated, free...
Interface studies of rare earth oxides on silicon and germanium substrates
... dielectric constant.22,25 Table 2.1: Summary of the dielectric constant (k), band gap (Eg), conduction (CBO) and valence band offsets (VBO) on Si values for rare earth (RE) oxides and transition metal ... explanation as to why rare earth oxides form good interfaces with Ge 2.1.1 Rare earth oxides as second generation high-k dielectrics The criterion of thermodynami...
Top down engineered silicon and germanium nanowire MOSFET
... nMOSFET and (b) a Schottky barrier nMOSFET 32 X Figure 3.4: Energy band diagram of (b-d) SB-pMOSFETs and (e-g) SBnMOSFET under various gate and drain bias VDS2 is more negative than VDS1 and ... materials and their mid-bandgap work function 11 1.4 Objectives and scopes This project is to explore the top- down engineered nanowire GAA MOSFET for future transistor applicatio...
Study on high mobility channel transistors for future sub 10 nm CMOS technology
... STUDY ON HIGH MOBILITY CHANNEL TRANSISTORS FOR FUTURE SUB- 10 nm CMOS TECHNOLOGY Fei GAO (B Eng, Xi’an Jiaotong University, PR CHINA) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... strained high- Ge concentration SGOI is successfully demonstrated by two-step oxidation of sputtered low Ge content α-SiGe (amorphous SiGe) on a SOI substrate Compared with convention...
ADVANCED PROCESS AND EQUIPMENT CONTROL FOR
... application of advanced process control and equipment control to reduce the process variation in lithography is investigated This thesis addresses these areas: 1) Real-time monitoring and control of ... device speed and performance (Edgar et al., 2000) CD control is required for obtaining adequate transistor, interconnect and consequently overall circuit performance...
Advanced materials and novel devices for CMOS applications
... p-FET performance i In summary, novel devices employing novel strain engineering techniques were studied They show promising potential for augmenting the performance of conventional CMOS transistors ... describe to my daddy, my mummy and my lovely brother, Henry I thank them for their care and love in my entire life, and thank daddy and mummy for the sacrifices they have...
Novel III v mosfet integrated with high k dielectric and metal gate for future CMOS technology
... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Al...
INVESTIGATION OF EXAFS CUMULANTS OF SILICON AND GERMANIUM SEMICONDUCTORS BY STATISTICAL MOMENT METHOD PRESSURE DEPENDENCE
... Fig 1a Pressure dependence of NND of Ge Fig 1b Pressure dependence of volume of Ge Fig 2a Temperature dependence of DWF of Ge Fig 2b Pressure dependence of DWF of Ge In Fig.3a, we plot the pressure ... INVESTIGATION OF EXAFS CUMULANTS OF SILICON AND 115 Fig 3b Pressure dependence of volume of Ge Fig 4a Temperature dependence of DWF of...
Strain engineering for advanced silicon, germanium and germanium tin transistors
... STRAIN ENGINEERING FOR ADVANCED SILICON, GERMANIUM AND GERMANIUM- TIN TRANSISTORS CHENG RAN (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... Transistors 69 4.1.2 Strain Engineering for Ge P-channel MOSFETs (pMOSFETs) 71 4.2 4.3 Key Concept: Exploiting Ge2Sb2Te5 for Strain Engineering 73 Stress Simulation and ... Ge Trimmi...
Advanced contact engineering for silicon, germanium and germanium tin devices
... ADVANCED CONTACT ENGINEERING FOR SILICON, GERMANIUM, GERMANIUM- TIN DEVICES TONG YI (M Eng.), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ... on contact engineering for Si, Ge, and GeSn devices Low contact resistance is needed for advanced Si based devices and also new generation of Ge or GeSn base...
Advanced transistors for supply voltage reduction tunneling field effect transistors and high mobility MOSFETS
... ADVANCED TRANSISTORS FOR SUPPLY VOLTAGE REDUCTION: TUNNELING FIELD- EFFECT TRANSISTORS AND HIGH- MOBILITY MOSFETS GUO PENGFEI (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE ... tr Rise time s V Voltage V Va Voltage amplitude V Vbase Base level voltage V VDD Supply voltage V VDS Drain voltage V VFB Flatband voltage V VGS V VTH Gate voltage Max...
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