The Materials Science of Thin Films Episode 7 pps

... Chapter 13 Modification of Surfaces and Films 589 13.1. Introduction 589 13.2. Lasers and Their Interactions with Surfaces 591 The Materials Science of Thin Films Foreword ... Properties of Thin Films 451 10.1. Introduction to Electrical Properties of Thin Films 451 10.2. Conduction in Metal Films 455 10.3. Electrical Transport...

Ngày tải lên: 05/03/2014, 17:20

... Structure of Films and Coatings 223 5.7. Amorphous Thin Films 234 Exercises 243 References 246 The Materials Science of Thin Films 1.5. Thermodynamics of Materials 27 ... are among the most frequently consulted references in the field of materials. Unless noted other- 1.5. Thermodynamics of Materials 23 AG = RT In< The free...

Ngày tải lên: 27/06/2014, 06:20

... subject as a result of the research of the past 50 years. Basically, the richness in the diversity of materials properties occurs because countless combinations of the admixture of chemical composi- ... diverse parts of the ancient world. Practitioners were concerned with the purity and cost of the gold, surface preparation, the uniformity of the a...

Ngày tải lên: 27/06/2014, 17:20

... and be oxidized in the process. Further consideration of Eqs. 1- 12 and 1- 15b indicates that )2/3 AG = exp - ( aAl,03 K= (aAl Y3pO2 RT (1- 17) The A1,0, and A1 may be considered ... Equation 1- 12 is one of the most frequently used equations in chemical thermodynamics and will be helpful in analyzing CVD reactions. Combining Eqs. 1- 10 and 1- 11 gives...

Ngày tải lên: 11/08/2014, 20:21

... in the presence of an applied field. logarithm of the rate is plotted on the ordinate and the reciprocal of the absolute temperature is plotted along the abscissa. The slope of the resulting ... substitution of Eq. 2- 2, we get dv, = niz . (2- 7) m n 2 RT The use of Eq. 2- 3b yields (P = (1/4)nF, and substitution of the perfect gas la...

Ngày tải lên: 11/08/2014, 20:21

... (4- 34a) (4- 34b) Note the use of the perfect gas law and the neglect of the temperature dependence of D. Maintenance of stoichiometry requires that JCd = JTez 9 (4- 35) the factor of ... view of the MOS field effect transistor structure in Fig. 4- 1 indicates the extent to which the technology is employed. Above the plane of the base P-Si...

Ngày tải lên: 11/08/2014, 20:21

... Depletion 5. 5 Experimental Studies of Nucleation and Growth 5. 6 Grain Structure of Films and Coatings 5. 7 Amorphous Thin Films References 1 -5 are recommended sources for much of the subject ... 21 35 700 GaN TMGa + NH, 800 A1N TMAl + NH, 1 250 GaAs TMGa + ASH, 8 .50 1824 650 - 750 GaP TMGa + PH, 750 GaSb TEGa + TMSb 9.17 253 2 50 0 -55 0 1.13...

Ngày tải lên: 11/08/2014, 20:21

... series of post-specimen lenses. The objective lens produces the first image of the object and is, therefore, required to be the most perfect of the lenses. Depending on how the beams reaching the ... TEM operation are differentiated by the schematic ray dia- 266 Characterization of Thin Films l2 of the typical SEM is shown in Fig. 6- 7. Electrons ther...

Ngày tải lên: 11/08/2014, 20:21

... direction). the GB than there is into the matrix of the grains. The ratio of these two fluxes can be estimated through the use of Eqs. 8- 2 and 8- 3 for FCC metals; i.e., nb 6Db 3 x 8. 1 TM - ... consumes the Q phase at one interface and the @ phase at the other interface. It is instructive to begin with the simplified analysis of the kinetics of...

Ngày tải lên: 11/08/2014, 20:21

... A. Nicolet, Thin Solid Films 52, 415, 197 8). Chapter 9 3liiEzk Mechanical Properties of Thin Films 9. 1. INTRODUCTION Interest in mechanical-property effects in thin films has focused ... many materials it has a value of about 0.3. Under the action of shear stresses, shear strains (y) are induced; 9. 3. Internal Stresses and Their Analyses 41 9...

Ngày tải lên: 11/08/2014, 20:21

... Properties of Thin Films 10. 1. INTRODUCTION TO ELECTRICAL PROPERTIES OF THIN FILMS 10. 1 .l. General Considerations Electrical properties of thin films have long been of practical ... capacitance is the product of the two individual (oxide and semiconductor) capacitances divided by their sum.) Note that now the bands bend the other way -the slope o...

Ngày tải lên: 11/08/2014, 20:21

... perpendicular and parallel, to the plane of incidence. Through the use of the Maxwell equations with appropriate interfacial boundary conditions, the amplitudes of the components of the transmitted (&,l, ... 11. 2.6. Optical Properties of Thin Dielectric and Semiconductor Films The optical properties of dielectric and semiconductor films are colle...

Ngày tải lên: 11/08/2014, 20:21

... for uAU /aA,? 12. Refer to the RBS spectra of Fig. 13-9. a. What is the significance of the yield counts of - lo00 and 3000 per b. What is the width of the a-Si layer after 15 min at ... 17, 20) 6.4 .7. 1. Physical Principles. This popular thin- film characterization tech- nique relies on the use of very high energy (MeV) beams of low mass ions. T...

Ngày tải lên: 13/08/2014, 17:20