MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 14 potx
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 14 potx
...
10.6 Parameter Extraction Using Optimizer
53
1
lo-'
1 0-2
1 0-3
9
lo4
I
0-5
1 0-6
1
lo-'
1 0-2
1 0-3
9
lo4
I
0-5
1 0-6
1 0-7
10"
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ...
[l]
G.
T. Wright and
H.
M. A. Gaffur, ‘Preprocessor modeling of parameter and geometry
dependence of short and narrow MOSFET for VLSI circuit simul...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx
... available
from
the British Library.
MOSFET MODELING FOR VLSI SIMULATION
Theory and Practice
International Series on Advances
in
Solid State Electronics and Technology
Copyright
0
2007 by ... case permission to
photocopy is not required from the publisher.
ISBN-13 97 8-9 8 1-2 5 6-8 6 2-5
ISBN-
10
98
1
-2 5 6-8 62-X
Disclaimer:
This book was prepa...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx
...
form that at first glance appears different.
6.7
Short-Geometry Models
3
-
2-
-
a
9-
W-
(7
5
9
1.75
Q
t-
6
!I
3
t-
6
fJY
0.5
293
I
=
1.31
x
104V/cm
a=
1.13
0
- ... (6 .145 ) and (6 .146 ) for
cYxl
and
cYX2
and substituting in
Eq. (6 .144 ) yields
(6 .147 )
Thus is related to the bulk depletion charge
Qb
and to the inversion
ch...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 9 potx
...
308
3
.O
6 MOSFET
DC
Model
I I
1
I
I I
pMOST
toX
=
105
A
W,/L,
=
10l0.5
v,,
=
-4
v
h
c
E
4
v
U
I
1
.o
I
-
-2
v
0.01
-1 -
-
7-
-1 -
-
i
-
I
*
" ...
6
MOSFET
DC
Model
GATE
SAT
U
R
AT
10
N
4
DRAIN
1
L
-
- -
-
- -
-
-
-
-
-
D
C
0
WY'
L
4J-4
Fig. 6....
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt
... conditions is given by the Fermi-Dirac
At
77K
ni
for
silicon
is
-1 0-2 0cm-3,
while
at
400K
its value is -1 O'*~m-~
28
2
Basic Semiconductor and
pn
Junction Theory
nonequilibrium condition ...
-
Vd);
vd
is positive
for
forward bias and negative
for
reuerse bias.
If the applied forward voltage is exactly equal to the built-in
voltage, there wi...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 3 docx
...
+ +
pMOST
- -
-
+
terminal voltages as drain-source voltage
Vds(
=
V,
-
VJ,
gate-source voltage
V,,(
=
V,
-
V,),
and bulk-source voltage
vb,(
=
vb
-
Vs).
For
normal
DC ...
2
Basic Semiconductor and
pn
Junction
Theory
The variables
F,,F,
and
F3
are
F,
=-
*bi
[l
-( 1
-
F,)&apos ;-& quot;]
(1
-4
F2
=
(1
-
F,...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc
... Structure and Operation
~i
1;
L
6i!
-
-
-
-
-
-
-
-
-
Fig.
3.3
1
Cross-section showing overlap capacitances between the source/drain and the
gate which give rise to
C,,,
and
CGDo ... order expression for
Rsp,
based on the assumption of uniform doping
128
4
MOS
Capacitor
I-
-t
>
O
O+
-0 .6
1
A1
(p-Si
n+
Po~y(p-si)
-o...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx
...
(5 .14)
Substrate
Vfb
df
Qh
Y
<h
VTO
nMOST p-type
-
+-
+++
pMOST n-type
-
-+ -
(for
metals and
n+
polysilicon
gate)
- -
(for metals and
n+
polysilicon gate)
+
(for ... operation
for
a p-type substrate,
N,
=
5.1015
cm-
’,
to,
=
300
A,
and
V,,
=
0
V
4.2
MOS
Capacitor at Non-Zero Bias
143
Using
Eq.
(4.29)
for
Q...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx
...
>" ;-
I
5
0.4
lY
I
bO.3
195
1'1'1'1'1~1'1'1~
I
-
Nb
=
2
X
10'"cm-3
-
-
-
-
-
W=20
m
-
f"\L
"A&ING
-
I
I
1 ... both pMOST and nMOST devices, a general expression for
the threshold voltage can be written as
(5.63)
where the
+
and
-
signs are for
n-
and p-chan...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 7 doc
... model for drain-induced barrierlowering
and drain-induced high electric field in a short-channel MOSFET , Solid-State
pp. 11 8-1 27 (1989).
Electron., 30, pp. 50 3-3 11 (1987).
[78]
Y.
Omura and ...
(a) and (b) (Figs. 5.31 and 5.32) which are for
Vsb
=
3
V
and
0
V,
respectively.
n-Channel Devices
(nMOST). For n-channel enhancement devices
(n'
polysil...