Advances in optical and photonic devices Part 3 pptx
Advances in optical and photonic devices Part 3 pptx
... 1 03, 0 531 03 (2008) Advances in Optical and Photonic Devices 34 in this case. That is the reason why we make use of the flower design in enhancing the PQR light output power since the increase ... reflection bandwidth profile with wavelength for a number of different slots at a particular slot spacing and gain conditions. Advances in Optical and Photonic Devices 36 Fig. 22. Optical ... (SLAs) to concentrate and guide individual light, Advances in Optical and Photonic Devices 46 in the effective refractive index in the mirror regions will produce a shift in the comb mode reflection...
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Advances in optical and photonic devices Part 10 pptx
... confining layers (the lower refractive index regions – upper and lower cladding layers), corresponds to a DBQW-RTD with thick low doped Advances in Optical and Photonic Devices 178 devices ... 1 Structures incorporating InGaAsP are usually grown by MOCVD (Bohrer et al., 19 93) . Advances in Optical and Photonic Devices 170 frequencies of f1, f2, As can be seen in Figure 10, however, ... GaAs/AlAs devices show ΔVVP ~ 0.4 V and ΔJPV ~ 5 kA/cm2.) DBQW500 nm500 nm 30 0 nmrefractive index profile-conduction band profile 1616 2x10 cm 2x10 cm1819zz -3 -3 -3 -3 30 nmIn...
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Advances in optical and photonic devices Part 1 pot
... Advances in Optical and Photonic Devices Advances in Optical and Photonic Devices 8 Fig. 4. (a) PL spectra at 77 K with varying optical pumping level taken from InAs Qdots within InP matrix ... spectra in Fig. 5 are broadened with increasing optical excitation densities. Furthermore, an increase in integrated PL intensity after intermixing Advances in Optical and Photonic Devices ... (Morioka et al., 19 93) for nonlinear spectroscopy, microscopy, and laser biomedicine. Advances in Optical and Photonic Devices Edited by Ki Young Kim Intech Broadband Emission in Quantum-Dash...
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Advances in optical and photonic devices Part 2 pot
... 0. 736 μA/hole by using linear fitting. Advances in Optical and Photonic Devices 14 dominant wavelength is shown in longer cavity Qdash lasers of 850 µm and 1000 µm, as depicted in Fig. ... distribution of noninteracting Qdashes at an intermediate intermixing, are achieved after the intermixing. The inset of Fig. 13, showing the changes of FWHM of the broadband laser with injection depicts ... Variation in each individual quantized energy state owing to inhomogeneous noninteracting quantum confined nanostructures in addition to self broadening effect demonstrate a broad and continuous...
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Advances in optical and photonic devices Part 4 doc
... in Fig. 17 below. A continuous tuning of over 2 nm while maintaining a SMSR of over 30 dB is measured. The change in wavelength with temperature is in line with the change in the index of InP ... rates. Optical injection-locking is proposed as a solution to these problems. It enhances the intrinsic component bandwidth and reduces frequency chirp considerably. Advances in Optical and Photonic ... wells and 15 tensile strained (-0.4%) InGaAsP barriers. The MQW active layer is sandwiched by 50nm-thick InGaAsP separated confinement heterostructure (SCH) Advances in Optical and Photonic Devices...
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Advances in optical and photonic devices Part 5 doc
... using H+ ion implantation, it served to localize the current injection without having to etch a mesa. Advances in Optical and Photonic Devices 88 injection-locked laser diodes in 19 83 ... The major obstacle in switching from Advances in Optical and Photonic Devices 86 3. 2 Numerical simulations The mathematical model proposed above is implemented in MATLAB in order to observe ... VCSELs, the top and bottom DBRs were grown as 28 and 38 pairs of un-doped InAlGaAs-InAlAs schemes. The top and bottom DBRs consisted of 33 and 50 layers respectively for 1 .3 m emission VCSELs....
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Advances in optical and photonic devices Part 6 doc
... diameter of 20μm and is therefore distinctly multimode. Since optical injection-locking favours single-mode operation by eliminating longitudinal modes and since the modes generated in VCSELs are ... detuning regime proposes flat, highly damped S21 curves. An increase in injected optical power, while remaining keeping the VCSELs in negative detuning configuration, results in the increase ... optical cavity. The transverse modes commonly found in VCSELs remain largely unaffected by optical injection-locking. VCSEL-by- VCSEL optical injection-locking was presented using fibred single-mode...
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Advances in optical and photonic devices Part 11 potx
... 22, Nov. 1999, 34 43 34 45 Advances in Optical and Photonic Devices 200 channels. Moreover, the circuit allows direct addition of the message to be transmitted and masked within the chaotic ... simply way to generate and convert electrical chaotic signals into optical sub-carriers that can be transmitted by conventional optical Advances in Optical and Photonic Devices 206 Van Hoof, ... Hybrid Nanoparticle/Organic Devices with Strong Resonant Tunneling Behaviors. Advanced Functional Materials, Vol. 19, No. 16, Jul. 2009, 2648-26 53 Advances in Optical and Photonic Devices ...
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Advances in optical and photonic devices Part 13 ppt
... spacing corresponding to the cavity length. Advances in Optical and Photonic Devices 236 QD FP laser diode1000 1100 1200 130 0 1400-O-bandO-bandUltra Wide BandInGaAs Quantum Dot+SbInAs ... constructed in the C- and L-band (C-band: 1 530 –1565 nm, and L-band: 1565–1625 nm). The widening of an optical amplifier bandwidth has been intensively studied in the conventional photonic bands of ... the C- and L-band. However, GaAs-based, Si-based, and SiGe-based semiconductor photonic devices will Advances in Optical and Photonic Devices 234 wavelength. In this case, the In composition...
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Advances in optical and photonic devices Part 14 potx
... value of intrinsic gain of level 106 or more in semiconductor structures is not trivial task in development of silicon photomultipliers. For remaining, the principle of internal gain of multiplication ... the results Advances in Optical and Photonic Devices 268 The plot gives the dark rate thermal activation energy of 433 meV at 2V above breakdown and 38 8 meV at 3V above breakdown. These ... multiplication process and produce a self-sustaining current. The initiation could be as result of incoming photon interaction or termal created carrier inside depleted area. For the stopping of the avalanche...
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