Advances in optical and photonic devices Part 3 pptx
Advances in optical and photonic devices Part 3 pptx
... 1 03, 0 531 03 (2008) Advances in Optical and Photonic Devices 34 in this case. That is the reason why we make use of the flower design in enhancing the PQR light output power since the increase ... reflection bandwidth profile with wavelength for a number of different slots at a particular slot spacing and gain conditions. Advances in Optical and Photonic...
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Advances in optical and photonic devices Part 10 pptx
... confining layers (the lower refractive index regions – upper and lower cladding layers), corresponds to a DBQW-RTD with thick low doped Advances in Optical and Photonic Devices 178 devices ... 1 Structures incorporating InGaAsP are usually grown by MOCVD (Bohrer et al., 19 93) . Advances in Optical and Photonic Devices 170 frequencies of f1, f2, As...
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Advances in optical and photonic devices Part 1 pot
... Advances in Optical and Photonic Devices Advances in Optical and Photonic Devices 8 Fig. 4. (a) PL spectra at 77 K with varying optical pumping level taken from InAs Qdots within InP matrix ... spectra in Fig. 5 are broadened with increasing optical excitation densities. Furthermore, an increase in integrated PL intensity after intermixing Advances...
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Advances in optical and photonic devices Part 2 pot
... 0. 736 μ A/hole by using linear fitting. Advances in Optical and Photonic Devices 14 dominant wavelength is shown in longer cavity Qdash lasers of 850 µm and 1000 µm, as depicted in Fig. ... distribution of noninteracting Qdashes at an intermediate intermixing, are achieved after the intermixing. The inset of Fig. 13, showing the changes of FWHM of the broadband l...
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Advances in optical and photonic devices Part 4 doc
... in Fig. 17 below. A continuous tuning of over 2 nm while maintaining a SMSR of over 30 dB is measured. The change in wavelength with temperature is in line with the change in the index of InP ... rates. Optical injection-locking is proposed as a solution to these problems. It enhances the intrinsic component bandwidth and reduces frequency chirp considerably. Advances in...
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Advances in optical and photonic devices Part 5 doc
... using H+ ion implantation, it served to localize the current injection without having to etch a mesa. Advances in Optical and Photonic Devices 88 injection-locked laser diodes in 19 83 ... The major obstacle in switching from Advances in Optical and Photonic Devices 86 3. 2 Numerical simulations The mathematical model proposed above is implemented i...
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Advances in optical and photonic devices Part 6 doc
... diameter of 20μm and is therefore distinctly multimode. Since optical injection-locking favours single-mode operation by eliminating longitudinal modes and since the modes generated in VCSELs are ... detuning regime proposes flat, highly damped S 21 curves. An increase in injected optical power, while remaining keeping the VCSELs in negative detuning configuration, results...
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Advances in optical and photonic devices Part 11 potx
... 22, Nov. 1999, 34 43 34 45 Advances in Optical and Photonic Devices 200 channels. Moreover, the circuit allows direct addition of the message to be transmitted and masked within the chaotic ... simply way to generate and convert electrical chaotic signals into optical sub-carriers that can be transmitted by conventional optical Advances in Optical and P...
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Advances in optical and photonic devices Part 13 ppt
... spacing corresponding to the cavity length. Advances in Optical and Photonic Devices 236 QD FP laser diode 1000 1100 1200 130 0 1400 -O-band O-band Ultra Wide Band InGaAs Quantum Dot+Sb InAs ... constructed in the C- and L-band (C-band: 1 530 – 1565 nm, and L-band: 1565–1625 nm). The widening of an optical amplifier bandwidth has been intensively studied in the c...
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Advances in optical and photonic devices Part 14 potx
... value of intrinsic gain of level 10 6 or more in semiconductor structures is not trivial task in development of silicon photomultipliers. For remaining, the principle of internal gain of multiplication ... the results Advances in Optical and Photonic Devices 268 The plot gives the dark rate thermal activation energy of 433 meV at 2V above breakdown and 38 8 meV at...
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