Advances in optical and photonic devices Part 1 pot

Advances in Optical and Photonic Devices Advances in Optical and Photonic Devices Edited by Ki Young Kim Intech IV Published by Intech Intech Olajnica 19/2, 32000 Vukovar, Croatia Abstracting and non-profit use of the material is permitted with credit to the source. Statements and opinions expressed in the chapters are these of the individual contributors and not necessarily those of the editors or publisher. No responsibility is accepted for the accuracy of information contained in the published articles. Publisher assumes no responsibility liability for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained inside. After this work has been published by the Intech, authors have the right to republish it, in whole or part, in any publication of which they are an author or editor, and the make other personal use of the work. © 2010 Intech Free online edition of this book you can find under www.sciyo.com Additional copies can be obtained from: publication@sciyo.com First published January 2010 Printed in India Technical Editor: Teodora Smiljanic Advances in Optical and Photonic Devices, Edited by Ki Young Kim p. cm. ISBN 978-953-7619-76-3 Preface The title of this book, Advances in Optical and Photonic Devices, encompasses a broad range of theory and applications which are of interest for diverse classes of optical and photonic devices. Unquestionably, recent successful achievements in modern optical communications and multifunctional systems have been accomplished based on composing “building blocks” of a variety of optical and photonic devices. Thus, the grasp of current trends and needs in device technology would be useful for further development of such a range of relative applications. The book is going to be a collection of the contemporary researches and developments of various devices and structures in the area of optics and photonics. It is composed of 17 excellent chapters covering fundamental theory, physical operation mechanisms, fabrication and measurement techniques, application examples. Besides, it contains comprehensive reviews of recent trends and advancements in the field. First six chapters are especially focused on diverse aspects of recent developments of lasers and related technologies, while the later chapters deal with various optical and photonic devices including waveguides, filters, oscillators, isolators, photodiodes, photomultipliers, microcavities, and so on. Although the book is a collected edition of specific technological issues, I strongly believe that the readers can obtain generous and overall ideas and knowledge of the state-of-the-art technologies in optical and photonic devices. Lastly, special words of thanks should go to all the scientists and engineers who have devoted a great deal of time to writing excellent chapters in this book. January 2010 Editor Ki Young Kim Department of Physics National Cheng Kung University Tainan, Taiwan E-mail: kykim1994@gmail.com Contents Preface V Lasers 1. Broadband Emission in Quantum-Dash Semiconductor Laser 001 Chee L. Tan, Hery S. Djie and Boon S. Ooi 2. Photonic Quantum Ring Laser of Whispering Cave Mode 021 O’Dae Kwon, M. H. Sheen and Y. C. Kim 3. A Tunable Semiconductor Lased Based on Etched Slots Suitable for Monolithic Integration 039 D. C. Byrne, W. H. Guo, Q. Lu and J. F. Donegan 4. Monolithic Integration of Semiconductor Waveguide Optical Isolators with Distributed Feedback Laser Diodes 059 Hiromasa Shimizu 5. Optical Injection-Locking of VCSELs 067 Ahmad Hayat, Alexandre Bacou, Angélique Rissons and Jean-Claude Mollier 6. Tunable, Narrow Linewidth, High Repetition Frequency Ce:LiCAF Lasers Pumped by the Fourth Harmonic of a Diode-Pumped Nd:YLF Laser for Ozone DIAL Measurements 101 Viktor A. Fromzel, Coorg R. Prasad, Karina B. Petrosyan, Yishinn Liaw, Mikhail A. Yakshin, Wenhui Shi, and Russell DeYoung Optical and Photonic Devices 7. Single Mode Operation of 1.5-μm Waveguide Optical Isolators Based on the Nonreciprocal-loss Phenomenon 117 T. Amemiya and Y. Nakano 8. GaAs/AlOx Nonlinear Waveguides for Infrared Tunable Generation 137 E. Guillotel, M. Ravaro, F. Ghiglieno, M. Savanier, I. Favero, S. Ducci, and G. Leo VIII 9. Waveguide Photodiode (WGPD) with a Thin Absorption Layer 161 Jeong-Woo Park 10. Resonant Tunnelling Optoelectronic Circuits 173 José Figueiredo, Bruno Romeira, Thomas Slight and Charles Ironside 11. Integrated-Optic Circuits for Recognition of Photonic Routing Labels 207 Nobuo Goto, Hitoshi Hiura, Yoshihiro Makimoto and Shin-ichiro Yanagiya 12. Chip-Scale Programmable Photonic Filters 223 Duncan L. MacFarlane 13. Quantum Dot Photonic Devices and Their Material Fabrications 231 Naokatsu Yamamoto, and Hideyuki Sotobayashi 14. Silicon Photomultiplier - New Era of Photon Detection 249 Valeri Saveliev 15. Optical Mode Properties of 2-D Deformed Microcavities 273 Soo-Young Lee 16. Practical Continuous-Wave Intracavity Optical Parametric Oscillators 293 Dr David J M Stothard 17. Ultra-Sensitive Optical Atomic Magnetometers and Their Applications 329 Igor Savukov Lasers [...]... emissions (1. 65, 1. 62, and 1. 59 µm) from E0, E1 and E2 energy transitions were obtained at J = 1. 1×Jth from lasers with cavities L of 10 00, 300, and 15 0 µm, respectively The distinct lasing wavelength peak is attributed to the finite modal gain of each quantized state in Qdash assembly Carriers localized in different dots/dashes, resulting in a system without a global Fermi function and exhibiting an inhomogeneously... energies in the highenergy portion that contributes to the gain broadening and thus produces less resolved confined state recombination in PL spectra However, this is not the case in the Qdot assembly due to its delta function DOS leading to the atomic-line luminescence spectra 8 Advances in Optical and Photonic Devices Fig 4 (a) PL spectra at 77 K with varying optical pumping level taken from InAs Qdots... observed in both as-grown and intermixed samples, as shown in Fig 5, with increasing optical excitation densities The continuous blue-shift of the PL peak wavelength up to 88 nm in the as-grown sample and 61 nm in the intermixed sample at the optical excitation density of 15 00 W/cm2, relative to those obtained at the excitation of 3 W/cm2, are shown in the inset of Fig 5 The effect of band-filling is insufficient... seen in Qdot nanostructures (Hadass et al., 2004) The nearly symmetric Qdash PL spectra in Fig 5 are broadened with increasing optical excitation densities Furthermore, an increase in integrated PL intensity after intermixing 10 Advances in Optical and Photonic Devices occurs All these observations are contrary to the conventional quantum-confined nanostructures These can be attributed to the continuous... Further increase in annealing temperature initiates more intermixing, and therefore improves the uniformity in shape, size and composition of Qdash leading to reduction in PL linewidth The result points out the linewidth broadening at intermediate stage of intermixing due to nonuniform interdiffusion, which will be further selected to broaden the Qdash laser emission Fig 2 The evolution of PL peak shift and. .. structure suggesting that the elongated islands are formed by the coalescence of two or more dot-like islands Considering the large dispersion in shape, size and composition, the inhomogeneous Qdash gives a wide energy spreading in the confining potentials This effect leads to the broadened optical gain characteristics [Fig 1( b-bottom)] suitable for the wideband optical devices such as superluminescent diodes... Qdots within InP matrix (above) and InAs Qdashes within InAlGaAs matrix (below) The confined energy subbands are indicated with the arrow, after the deconvolution with the multiGaussian spectra (b) EL spectra at RT showing the spontaneous emission (top) at J=0.8×Jth from a 300 µm device and the lasing emission spectra (bottom) from E0, E1 and E2 states These individual lasing lines are obtained from.. .1 Broadband Emission in Quantum-Dash Semiconductor Laser Chee L Tan1, Hery S Djie1 and Boon S Ooi1,2 2King 1Lehigh University, Abdullah University of Science & Technology, 1United States 2Saudi Arabia 1 Introduction A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in localized finite self-assembled wire-like... lasers, the rule changing broadband lasing is obtained from the quasicontinuous interband transition by the inhomogeneous Qdash ensembles To further enhance the broad spectrum emission and fine tune the lasing wavelength coverage, we further engineer the bandgap energy of Qdash material with postgrowth lattice intermixing process utilizing impurity-free vacancy induced disordering (IFVD) technique We... acts as the strain compensating barrier The lower cladding consists of a 200 nm thick In0 .52Al0.48As layer doped with Si at 1 × 10 18 cm-3, which is lattice matched to the InP substrate The upper cladding and contact layers are 17 00 nm thick In0 .52Al0.48As and 15 0 nm thick In0 .53Ga0.47As, respectively Both layers are doped with Be at 2 × 10 18 cm-3 (Djie et al., 2006; Wang et al., 2006) Fig 1( a) shows the . spectra in Fig. 5 are broadened with increasing optical excitation densities. Furthermore, an increase in integrated PL intensity after intermixing Advances in Optical and Photonic Devices 10 . Advances in Optical and Photonic Devices Advances in Optical and Photonic Devices Edited by Ki Young Kim Intech IV Published by Intech Intech. the atomic-line luminescence spectra. Advances in Optical and Photonic Devices 8 Fig. 4. (a) PL spectra at 77 K with varying optical pumping level taken from InAs Qdots within InP matrix