Advances in optical and photonic devices Part 1 pot

... Advances in Optical and Photonic Devices Advances in Optical and Photonic Devices 8 Fig. 4. (a) PL spectra at 77 K with varying optical pumping level taken from InAs Qdots within InP matrix ... spectra in Fig. 5 are broadened with increasing optical excitation densities. Furthermore, an increase in integrated PL intensity after intermixing Advances...

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... H. S. & Ooi, B. S. (2006). Group-III intermixing in InAs/InGaAlAs quantum dots -in- well. Appl. Phys. Lett., Vol. 88, No. 11 111 0, (March 2006) 11 111 0 1- 3 Wei, J. H. & Chan, K. S. (2005). ... ultrabroad quantum dash interband laser. Appl. Phys. Lett., Vol. 93, No. 11 110 1, (September 2008) 11 110 1 1- 3 Tan, C. L.; Djie, H. S.; Wang, Y.; Dimas, C. E.; Hongpinyo, V.; D...

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... 2 Q 1 s V R RTD 400 800 12 00 16 00 0 15 00 15 20 15 40 15 80 16 0 015 60 Wavelength (nm) Transmission (a.u.) Q Q 2 3 V s 1 V s V s 2 3 V I V =0 V >V V <V v p s s s s (a) (b) -11 0 -10 5 -10 0 -95 -90 -85 -80 -75 -70 -65 -60 -55 0.0 ... in an InGaAlAs optical waveguide containing an InGaAs/AlAs resonant tunneling diode. Appl. Phys.Letts, Vol. 75, No. 22, Nov. 19...

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... the 10 0% detection efficiency of photons. Equivalent noise charge (e) 10 000 5000 2000 10 00 10 0 500 200 10 .10 . 01 10 10 0 Shaping time (μs) 1/ f noise Current noise Voltage noise Total Total Increasing ... value of intrinsic gain of level 10 6 or more in semiconductor structures is not trivial task in development of silicon photomultipliers. For remaining, the princi...

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... by 1 in a transition to the excited state induced by Advances in Optical and Photonic Devices 330 integration into microfabricated packages. Such packages will be not only inexpensive and ... SD K σσ = , where SE σ and SD σ are spin-exchange and spin-destruction cross sections. Potassium has 14 1. 8 10 SE σ − =× cm 2 and 18 11 0 SD σ − =× cm 2 , so the...

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... emission 25A/cm 2 50A/cm 2 10 0A/cm 2 25A/cm 2 50A/cm 2 10 0A/cm 2 12 -petals, I th =28uA 11 A/cm 2 T =10 0% 25A/cm 2 50A/cm 2 10 0A/cm 2 T =1. 0% T =1. 0% T =1. 0% T =1. 0% T =1. 0% T =1. 0% T =1. 0% T =1. 0% T=0.63% Circle 18 um, I =15 uA PQR ... involved in addition to the ‘soft lasing turn-on’ behavior (Kim et al., 2009). 25A/cm 2 50A/cm 2 10 0A/cm 2 T =1. 0% T =1. 0% T =1. 0%...

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... "Laser and detector using integrated reflector for photonic integration." Electronics Letters 44 (17 ): 10 17 -10 19. Fessant, T. and Y. Boucher (19 98). "Additional modal selectivity induced ... (w = 1. 6μm), the optical confinement factor in the Fe thin film at one of the waveguide sidewalls is 0 .16 %, and the optical confinement factor of 0 .16 % brings...

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... using H+ ion implantation, it served to localize the current injection without having to etch a mesa. Advances in Optical and Photonic Devices 88 injection-locked laser diodes in 19 83 [16 ], ... of an optically injection-locked VCSEL with constant injected power and variable positive frequency detuning. The detuning is varied from 10 GHz to 11 0 GHz. On the other...

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... Transmission Using Tandem-Contact Single Quantum Well GaAlAs Lasers,” in Optoelectronic Signal Processing for Phased-Array Antennas II, vol. 12 17, no. 1, 19 90, pp. 2–5. Advances in Optical and Photonic ... diameter of 20μm and is therefore distinctly multimode. Since optical injection-locking favours single-mode operation by eliminating longitudinal modes and sin...

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... Vol.22, pp .10 55 -10 58. 0246 810 12 -80 -70 -60 -50 -40 -30 f1=400MHz, f2=450.25MHz, R load =50Ω f1+f2 I DC =1. 0mA, OMI=0.7 IMD2 [dBc] Reverse Bias[V] Advances in Optical and Photonic Devices 17 2 K. ... Tech.,Vol. 15 No. 4, pp.636~6 41 Advances in Optical and Photonic Devices 18 8 The InGaAlAs RTD-OW schematic wafer structure for operation at 15 50...

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