Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

... Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism H. Jeong, T.E. Park, H.K. Seong, M. Kim, U. Kim, H.J. Choi*Department of Materials Science ... Republic of Koreaarticle infoArticle history:Received 9 April 2008In ﬁnal form 5 November 2008Available online 12 November 2008abstractThe growth kinetics of Si nanowires produced by a vapour–liquid–solid ... degrade the performance of Sinanowire devices even if it diffuses into the nanowires. Somestudies have reported on the growth of Si nanowires using Ptwith a precursor of SiH4or SiCl4[4–6]....

Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

... nanowires have excellent single-crys-tal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was proposedfor the growth of silicon nanowires ... images of silicon nanostructures growth by diﬀerent pyrolysis time of silane. (a) a triangle-shaped silicon tip grown on a CNT by 30-minpyrolysis time. (b) A rectangle silicon grown on a CNT by ... catalyst for the growth of silicon nanowires (SiNWs).Transmission electron microscopy studies of the materials showed that the nanowires have a diameter of 50–70 nm and a length of several micrometers....

Carbon assisted synthesis of silicon nanowires

... char-acteristic of cubic silicon with a small impurity of silica.Reaction of silicon powder with activated car-bon in the absence of H2, by procedure (ii), yieldedabundant quantities of SiNWs. ... synthesis of Si nanowires, devoid of metallic impurities.Fig. 3. (a) TEM image of a Si nanojunction obtained by procedure (i) with Si:C ratio of 1:1. (b) TEM image of a nanowire obtained by procedure ... to the (1 1 1) planes of silicon. The crystallinity of the nanowires is con-siderably higher when only argon was used instead of a mixture of argon and hydrogen. The role of hydrogen in promoting...

Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism

... consists of nanoparticles of a fewFig. 2. Schematic depiction of SiNW growth by the SLS mecha-Ž. Ž .nism: a deposition of a thin layer of Ni on the Si 111 substrate;Ž. Ž.b formation of the ... in the growth of SiNWs. Becausethis growth process involves solid–liquid–solidphases, it is called SLS growth which is, in fact, ananalogous to the VLS mechanism. The growth pro-cess of a-SiNWs ... on a large area 10= 10 mm of 111 Sisubstrate after a 1 h period of growth. EDS analysisŽ.inset proved that the nanowires consist mainly of silicon. A trace amount of oxygen exists in thea-SiNWs,...

Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation

... oxideexceeded the growth rate of crystal silicon, outerlayer of silicon oxide will surround the crystal sil-icon. As a result, the growth of crystal silicon ceased and silicon oxide of outer layer ... Thepeculiar feature of the branch suggests that theremay exist a competitive growth between crystal silicon core and outer layer of silicon oxide. Whenthe forming rate of outer layer of silicon oxideexceeded ... haveintensively studied the growth mechanism of the silicon nanoparticle chains. They proposed thatnucleation and growth occurring alternatively re-sulted in the formation of chains of silicon nano-particles....

A study in the growth mechanism of silicon nanowires with or without metal catalyst

... Mater., Sens. Syst. 16 (2001) 31.Fig. 4. A) The growth sketch of sulfide -assisted mechanism. B) SEM image of SiNWs synthesized by sulfide -assisted growth. 770 J J. Niu, J N. Wang / Materials Letters ... sulfide -assisted growth models, respectively. The metal catalyst plays an important role on thecatalytic growth. However, the growth of silicon nanowires with sulfide is chiefly affected by the compound ... fabrication of SiNWs involves metal -assisted or metal-free growth. The metal -assisted growth mainly follow s thevapor–liquid–solid (VLS) mechanism, which was first de-scribed by Wagner and...

Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

... control of the dimensions and alignments of the NWs is required to employ them as elements of nanodevices.Vapor–liquid–solid (VLS) growth method has beenwidely employed for the NW growth of various ... that the growth rate of the NWs, R, is determined by the chemical potential difference at the interface of liquid/solid by the relation ship, R expðmSi=kTÞ [4]. Correspond-ingly, the growth ... (2007) 153–157Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor depositionD.W. Kwak, H.Y. Cho, W C. YangÃDepartment of Physics and Quantum-Functional...

Growth of silicon nanowires on UV structurable glass using self organized nucleation centres

... the growth of silicon nanowires is favoured. However, the init ialization of thenanowire growth requires additional investigations. Thechemical composition of the nanowires was checked by energy ... growth (VLS -growth) of such large nanowires, theLMS crystals exhibit a size which seems to correspond tothe diameter of the nanowires. Since the eutectic tempera-ture of the Ag–Si system of ... 2007AbstractWe report on the growth of silicon nanowires on photostructurable glass by low-pressure chemical vapour deposition. Thereby, noadditional catalyst was needed to stimulate the growth process....

Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)

... other works on the growth of silicon nanowires from indium by means of PVDwere found.In our case, the growth of nanowires from indium seemsto be rather insensitive to change of parameters like ... which isessential for most of the applications.In this work, the investigation of Au and In as solventsfor the growth of silicon nanowires on Si(1 1 1) via PVD by means of the well-known vapor–liquid–solid ... thesurface tension of indium and the low solubility of silicon in indium.Iacopi et al. [18] also studied indium as solvent for CVD growth of silicon nanowires. They treated the samples by H2plasma...

Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

... 20 0-nm-thick silicon oninsulator thin ﬁlms [8–10].Simulation of the emission spectrum of an ehp by a convolu-tion product of the density of states of the carriers affected by theFermi–Dirac ... 2008PACS:71.35.Ee78.55.Ae78.67.ÀnKeywords: Nanowires Silicon PhotoluminescenceExcitonElectron-hole-plasmaabstractWe have carried out photoluminescence measurements of silicon nanowires (SiNWs) obtained by thechemical ... vapor–liquid–solid mechanism. The nanowires have a typical diameter of 200 nm. Spectrum of the as-grown SiNWs exhibits radiative statesbelow the energy bandgap and a small contribut ion near the silicon...

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