Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

... Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism H. Jeong, T.E. Park, H.K. Seong, M. Kim, U. Kim, H.J. Choi * Department of Materials Science ... Republic of Korea article info Article history: Received 9 April 2008 In final form 5 November 2008 Available online 12 November 2008 abstract The growth kinetics of Si nanowires...

Ngày tải lên: 16/03/2014, 15:05

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Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

... nanowires have excellent single-crys- tal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was proposed for the growth of silicon nanowires ... images of silicon nanostructures growth by different pyrolysis time of silane. (a) a triangle-shaped silicon tip grown on a CNT by 30-min pyrolysis time. (b) A...

Ngày tải lên: 16/03/2014, 15:06

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Carbon assisted synthesis of silicon nanowires

Carbon assisted synthesis of silicon nanowires

... char- acteristic of cubic silicon with a small impurity of silica. Reaction of silicon powder with activated car- bon in the absence of H 2 , by procedure (ii), yielded abundant quantities of SiNWs. ... synthesis of Si nanowires, devoid of metallic impurities. Fig. 3. (a) TEM image of a Si nanojunction obtained by procedure (i) with Si:C ratio of 1:1. (b) TEM image...

Ngày tải lên: 16/03/2014, 15:04

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Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism

Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism

... consists of nanoparticles of a few Fig. 2. Schematic depiction of SiNW growth by the SLS mecha- Ž. Ž . nism: a deposition of a thin layer of Ni on the Si 111 substrate; Ž. Ž. b formation of the ... in the growth of SiNWs. Because this growth process involves solid–liquid–solid phases, it is called SLS growth which is, in fact, an analogous to the VLS mechanism. The g...

Ngày tải lên: 16/03/2014, 15:05

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Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation

Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation

... oxide exceeded the growth rate of crystal silicon, outer layer of silicon oxide will surround the crystal sil- icon. As a result, the growth of crystal silicon ceased and silicon oxide of outer layer ... The peculiar feature of the branch suggests that there may exist a competitive growth between crystal silicon core and outer layer of silicon oxide. When the form...

Ngày tải lên: 16/03/2014, 15:09

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A study in the growth mechanism of silicon nanowires with or without metal catalyst

A study in the growth mechanism of silicon nanowires with or without metal catalyst

... Mater., Sens. Syst. 16 (2001) 31. Fig. 4. A) The growth sketch of sulfide -assisted mechanism. B) SEM image of SiNWs synthesized by sulfide -assisted growth. 770 J J. Niu, J N. Wang / Materials Letters ... sulfide -assisted growth models, respectively. The metal catalyst plays an important role on the catalytic growth. However, the growth of silicon nanowires with sul...

Ngày tải lên: 16/03/2014, 15:09

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Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

... control of the dimensions and alignments of the NWs is required to employ them as elements of nanodevices. Vapor–liquid–solid (VLS) growth method has been widely employed for the NW growth of various ... that the growth rate of the NWs, R, is determined by the chemical potential difference at the interface of liquid/ solid by the relation ship, R expðm Si =kTÞ [4]. Corr...

Ngày tải lên: 16/03/2014, 15:15

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Growth of silicon nanowires on UV structurable glass using self organized nucleation centres

Growth of silicon nanowires on UV structurable glass using self organized nucleation centres

... the growth of silicon nanowires is favoured. However, the init ialization of the nanowire growth requires additional investigations. The chemical composition of the nanowires was checked by energy ... growth (VLS -growth) of such large nanowires, the LMS crystals exhibit a size which seems to correspond to the diameter of the nanowires. Since the eutectic tempera- tu...

Ngày tải lên: 16/03/2014, 15:17

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Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)

Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)

... other works on the growth of silicon nanowires from indium by means of PVD were found. In our case, the growth of nanowires from indium seems to be rather insensitive to change of parameters like ... which is essential for most of the applications. In this work, the investigation of Au and In as solvents for the growth of silicon nanowires on Si(1 1 1) via PVD...

Ngày tải lên: 16/03/2014, 15:17

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Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

... 20 0-nm-thick silicon on insulator thin films [8–10]. Simulation of the emission spectrum of an ehp by a convolu- tion product of the density of states of the carriers affected by the Fermi–Dirac ... 2008 PACS: 71.35.Ee 78.55.Ae 78.67.Àn Keywords: Nanowires Silicon Photoluminescence Exciton Electron-hole-plasma abstract We have carried out photoluminescence measurements of...

Ngày tải lên: 16/03/2014, 15:19

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