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tiết 23 học bài hát chú chim nhỏ dễ thương

Theoretical investigation on thermal properties of silicon based nanostructures

Theoretical investigation on thermal properties of silicon based nanostructures

Cao đẳng - Đại học

... 14 Thesis Outline 21 Simulation Methods 23 2.1 Brief Introduction to Molecular Dynamics 24 2.2 Stillinger-Weber Potential ... Mechanism to Tune Thermal Conductivity 118 vi 5.5 Summary 123 A Universal Gauge for Thermal Conductivity of Si Nanowires 125 6.1 6.2 Universal Gauge Above ... accuracy of equilibrium molecular dynamics for computation of thermal conductivity?”, Phys Lett A 374, 239 2 (2010) [5] J Chen, G Zhang, and B Li, “Molecular Dynamics Simulations of Heat Conduction in...
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Spontaneous growth and luminescence of si siox core shell nanowires

Spontaneous growth and luminescence of si siox core shell nanowires

Vật lý

... Zhang, C.S Lee, I Bello, S.T Lee, Chem Phys Lett 299 (1999) 237 J.L Gole, J.D Stout, W.L Rauch, Z.L Wang, Appl Phys Lett 76 (2000) 234 6 W Qin, C Wu, G Qin, J Zhang, D Zhao, Phys Rev Lett 90 (2003)...
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Báo cáo hóa học:

Báo cáo hóa học: " Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers" docx

Hóa học - Dầu khí

... electrical properties of hydrogenated amorphous silicon germanium alloys J Appl Phys 1998, 83:4111 23 Walther T, Humphreys CJ, Cullis AG, Robbins DJ: A study of interdiffusion and germanium segregation ... SR: Passivation of dangling bonds in amorphous Si and Ge by gas adsorption Phys Rev B 1987, 35 :238 5 25 Friesen C, Thompson CV: Reversible Stress Relaxation during Precoalescence Interruptions...
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Báo cáo hóa học:

Báo cáo hóa học: " In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron " potx

Hóa học - Dầu khí

... surface orientation map inserts in Fig 5e–f, where the usual {105}, {113} and {15 23} facet spots of dome islands appear [23, 24] Interestingly, at 600°C, the amplitude of the sidewall ripples does ... Phys Rev B 64, 125201 (2001) ¨ 23 A Rastelli, H von Kanel, Surf Sci 515, L493 (2002) 24 J Stangl, V Holy, G Bauer, Rev Mod Phys 76, 725 (2004) and references therein 123 ... 4a–f shows the sequence of RHEED patterns observed for Ge coverages increasing from to ML The 123 corresponding intensity evolution of the specular spot and other diffraction features are shown...
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The composition dependent mechanical properties of ge si core–shell nanowires

The composition dependent mechanical properties of ge si core–shell nanowires

Vật lý

... stress szz is proportional to the loaded strain ez along z direction for string-like materials [23] , szz ¼ Y ez (2) The proportional coefficient Y above is the Young’s modulus along z direction ... C.M Lieber, Nature 409 (2001) 66 [4] X Zhao, C.M Wei, L Yang, M.Y Chou, Phys Rev Lett 92 (2004) 236 805 [5] L.J Lauhon, M.S Gudiksen, D Wang, Nature 420 (2002) 57 [6] M.S Gudiksen, L.J Lauhon, ... Anderson, Phys Rev B 34 (1986) 6987 [22] M Laradji, D.P Landau, B Dnweg, Phys Rev B 51 (1995) 4894 [23] E.M Ronald, B.S Vijay, Nanotechnology 11 (2000) 139 [24] In order to recheck the reliability...
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Báo cáo hóa học:

Báo cáo hóa học: " Kinetics of Si and Ge nanowires growth through electron beam evaporation" ppt

Hóa học - Dầu khí

... details MATIS IMM-CNR, Via Santa Sofia 64, I-95 123 Catania, Italy 2Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, I-95 123 Catania, Italy 3CSFNSM - V.le A Doria 6, ... Dubrovskii et al [19] and it has been observed in the NWs growth both by MBE [20,21] and EBE [14,22 ,23] In particular, the presence of a dip around the NWs Page of clearly demonstrates that the atoms ... JC, Glas F: Growth kinetics and crystal structure of semiconductor nanowires Phys Rev B 2008, 78 :235 301 20 Werner P, Zakharov ND, Gerth G, Shubert L, Gosele U: On the formation of Si nanowires...
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Deposition of carbon nanotubes on si nanowires by chemical vapor deposition

Deposition of carbon nanotubes on si nanowires by chemical vapor deposition

Vật lý

... (1999) R16024 [14] N Wang, Y.H Tang, Y.F Zhang, C.S Lee, I Bello, S.T Lee, Chem Phys Lett 299 (1999) 237 [15] N Wang, Y.F Zhang, Y.H Tang, C.S Lee, S.T Lee, Appl Phys Lett 73 (1998) 3902 ...
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Si nanowires grown from silicon oxide

Si nanowires grown from silicon oxide

Vật lý

... 238 N Wang et al.r Chemical Physics Letters 299 (1999) 237 –242 bulk-quantity Si nanowires were synthesized by thermal evaporation ... Žd Nucleation stage of the Si nanowires N Wang et al.r Chemical Physics Letters 299 (1999) 237 –242 239 Fig Žcontinued nanowire product Žsponge-like, dark red in color formed on the inside wall ... 299 (1999) 237 –242 Fig Ža Nanoparticles precipitated by heating the SiO thin film Žb HRTEM image of the Si nanoparticle chain 241 242 N Wang et al.r Chemical Physics Letters 299 (1999) 237 –242 ent...
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Si nanowires synthesized by laser ablation of mixed sic and sio2 powders

Si nanowires synthesized by laser ablation of mixed sic and sio2 powders

Vật lý

... Lett 70 Ž1997 1852 w8x N Wang, Y.H Tang, Y.F Zhang, C.S Lee, S.T Lee, Chem Phys Lett 299 Ž1999 237 20 Y.H Tang et al.r Chemical Physics Letters 314 (1999) 16–20 w9x D.P Yu, Z.G Bai, Y Ding,...
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Silicon nanowires grown on si(1 0 0) substrates via thermal reactions with carbon nanoparticles

Silicon nanowires grown on si(1 0 0) substrates via thermal reactions with carbon nanoparticles

Vật lý

... seems to be the key reaction for the formation of Si nanowires by thermal evaporation of pure SiO [23] or mixed Si–SiO2 [24] powders Similarly, in our case a possible reaction route leading to the ... (2001) 18 [3] H.F Yan, Y.J Xing, Q.L Hang, D.P Yu, Y.P Wang, J Xu, Z.H Xi, S.Q Feng, Chem Phys Lett 323 (2000) 224 [4] X.C Wu, W.H Song, K.Y Wang, T Hu, B Zhao, Y.P Sun, J.J Du, Chem Phys Lett 336 ... (2001) 53 [5] N Wang, Y.H Tang, Y.F Zhang, C.S Lee, I Bello, S.T Lee, Chem Phys Lett 299 (1999) 237 [6] Y.F Zhang, Y.H Tang, H.Y Peng, N Wang, C.S Lee, I Bello, S.T Lee, Appl Phys Lett 75 (1999)...
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Si nanowires synthesized with cu catalyst

Si nanowires synthesized with cu catalyst

Vật lý

... Foundation of China (NNSFC 10334060) and National Basic Research Program of China (973 Program 2005CB 6236 06) is gratefully acknowledged The authors also thank Mr Liguo Xu for his helpful assistant work...
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Ultrafast growth of single crystalline si nanowires

Ultrafast growth of single crystalline si nanowires

Vật lý

... Zhang, Nano Lett (2003) 475 [3] Xin yuan Zhao, M Wei, L Yang, M.Y Choul, Phys Rev Lett 92 (2004) 236 805 [4] N Wang, Y.H Tang, Y.F Zhang, D.P Yu, C.S Lee, I Bello, S.T Lee, Chem Phys Lett 283 (1998) ... Phys 94 (2003) 6005 [8] T.Y Tan, S.T Lee, U Gosele, Appl Phys., A Mater Sci Process 74 (2002) 423 [9] R.S Wagner, W.C Ellis, Appl Phys Lett (1964) 89 [10] Junjie Niu, Jian Sha, Xiangyang Ma,...
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Characteristics of siox nanowires synthesized via the thermal heating of cu coated si substrates

Characteristics of siox nanowires synthesized via the thermal heating of cu coated si substrates

Vật lý

... helical-shaped nanowires have been fabricated previously using the VLS method [10,13–16, 19–21 ,23, 24] The growth of the SiOx nanowires in the present study can be divided into several steps In ... 125 (2003) 629 [22] Z Zhang, G Ramanath, P.M Ajayan, D Golberg, Y Bando, Adv Mater 13 (2001) 197 [23] R Ma, Y Bando, Chem Phys Lett 377 (2003) 177 [24] S.H Sun, G.W Meng, M.G Zhang, Y.T Tian, T...
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Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

Vật lý

... Tomiya, S Usui, H Ruda, J Vac Sci Technol B 15 (1997) 554 [7] Yiying Wu, Peidong Yang, J Am Chem Soc 123 (2001) 3166 [8] B Ressel, K.C Prince, S Heun, Y Homma, J Appl Phys 93 (2003) 3886 [9] W.-C Yang,...
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Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of si nanowires

Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of si nanowires

Vật lý

... MIEL 2000 [6] A.I Klimovskaya, I.V Prokopenko, I.P Ostrovskii, J Phys.: Condens Matter 13 (2001) 5 923 [7] A.I Klimovskaya, I.V Prokopenko, S.V Svechnikov, J Phys.: Condens Matter 14 (2002) 1735 [8]...
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