tiết 23 học bài hát chú chim nhỏ dễ thương
Theoretical investigation on thermal properties of silicon based nanostructures
... 14 Thesis Outline 21 Simulation Methods 23 2.1 Brief Introduction to Molecular Dynamics 24 2.2 Stillinger-Weber Potential ... Mechanism to Tune Thermal Conductivity 118 vi 5.5 Summary 123 A Universal Gauge for Thermal Conductivity of Si Nanowires 125 6.1 6.2 Universal Gauge Above ... accuracy of equilibrium molecular dynamics for computation of thermal conductivity?”, Phys Lett A 374, 239 2 (2010) [5] J Chen, G Zhang, and B Li, “Molecular Dynamics Simulations of Heat Conduction in...
Ngày tải lên: 10/09/2015, 08:38
Spontaneous growth and luminescence of si siox core shell nanowires
... Zhang, C.S Lee, I Bello, S.T Lee, Chem Phys Lett 299 (1999) 237 J.L Gole, J.D Stout, W.L Rauch, Z.L Wang, Appl Phys Lett 76 (2000) 234 6 W Qin, C Wu, G Qin, J Zhang, D Zhao, Phys Rev Lett 90 (2003)...
Ngày tải lên: 16/03/2014, 15:08
Báo cáo hóa học: " Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers" docx
... electrical properties of hydrogenated amorphous silicon germanium alloys J Appl Phys 1998, 83:4111 23 Walther T, Humphreys CJ, Cullis AG, Robbins DJ: A study of interdiffusion and germanium segregation ... SR: Passivation of dangling bonds in amorphous Si and Ge by gas adsorption Phys Rev B 1987, 35 :238 5 25 Friesen C, Thompson CV: Reversible Stress Relaxation during Precoalescence Interruptions...
Ngày tải lên: 21/06/2014, 05:20
Báo cáo hóa học: " Preface to Symposium E: Nanoscaled Si, Ge based Materials" potx
Ngày tải lên: 21/06/2014, 06:20
Báo cáo hóa học: " In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron " potx
... surface orientation map inserts in Fig 5e–f, where the usual {105}, {113} and {15 23} facet spots of dome islands appear [23, 24] Interestingly, at 600°C, the amplitude of the sidewall ripples does ... Phys Rev B 64, 125201 (2001) ¨ 23 A Rastelli, H von Kanel, Surf Sci 515, L493 (2002) 24 J Stangl, V Holy, G Bauer, Rev Mod Phys 76, 725 (2004) and references therein 123 ... 4a–f shows the sequence of RHEED patterns observed for Ge coverages increasing from to ML The 123 corresponding intensity evolution of the specular spot and other diffraction features are shown...
Ngày tải lên: 21/06/2014, 08:20
The composition dependent mechanical properties of ge si core–shell nanowires
... stress szz is proportional to the loaded strain ez along z direction for string-like materials [23] , szz ¼ Y ez (2) The proportional coefficient Y above is the Young’s modulus along z direction ... C.M Lieber, Nature 409 (2001) 66 [4] X Zhao, C.M Wei, L Yang, M.Y Chou, Phys Rev Lett 92 (2004) 236 805 [5] L.J Lauhon, M.S Gudiksen, D Wang, Nature 420 (2002) 57 [6] M.S Gudiksen, L.J Lauhon, ... Anderson, Phys Rev B 34 (1986) 6987 [22] M Laradji, D.P Landau, B Dnweg, Phys Rev B 51 (1995) 4894 [23] E.M Ronald, B.S Vijay, Nanotechnology 11 (2000) 139 [24] In order to recheck the reliability...
Ngày tải lên: 16/03/2014, 15:22
Báo cáo hóa học: " Kinetics of Si and Ge nanowires growth through electron beam evaporation" ppt
... details MATIS IMM-CNR, Via Santa Sofia 64, I-95 123 Catania, Italy 2Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, I-95 123 Catania, Italy 3CSFNSM - V.le A Doria 6, ... Dubrovskii et al [19] and it has been observed in the NWs growth both by MBE [20,21] and EBE [14,22 ,23] In particular, the presence of a dip around the NWs Page of clearly demonstrates that the atoms ... JC, Glas F: Growth kinetics and crystal structure of semiconductor nanowires Phys Rev B 2008, 78 :235 301 20 Werner P, Zakharov ND, Gerth G, Shubert L, Gosele U: On the formation of Si nanowires...
Ngày tải lên: 21/06/2014, 05:20
Báo cáo "Preparation and characteristics of the In-doped ZnO thin films and the n-ZnO:In/p-Si heterojunctions for optoelectronic switch" potx
Ngày tải lên: 14/03/2014, 13:20
Deposition of carbon nanotubes on si nanowires by chemical vapor deposition
... (1999) R16024 [14] N Wang, Y.H Tang, Y.F Zhang, C.S Lee, I Bello, S.T Lee, Chem Phys Lett 299 (1999) 237 [15] N Wang, Y.F Zhang, Y.H Tang, C.S Lee, S.T Lee, Appl Phys Lett 73 (1998) 3902 ...
Ngày tải lên: 16/03/2014, 15:04
Si nanowires grown from silicon oxide
... 238 N Wang et al.r Chemical Physics Letters 299 (1999) 237 –242 bulk-quantity Si nanowires were synthesized by thermal evaporation ... Žd Nucleation stage of the Si nanowires N Wang et al.r Chemical Physics Letters 299 (1999) 237 –242 239 Fig Žcontinued nanowire product Žsponge-like, dark red in color formed on the inside wall ... 299 (1999) 237 –242 Fig Ža Nanoparticles precipitated by heating the SiO thin film Žb HRTEM image of the Si nanoparticle chain 241 242 N Wang et al.r Chemical Physics Letters 299 (1999) 237 –242 ent...
Ngày tải lên: 16/03/2014, 15:08
Si nanowires synthesized by laser ablation of mixed sic and sio2 powders
... Lett 70 Ž1997 1852 w8x N Wang, Y.H Tang, Y.F Zhang, C.S Lee, S.T Lee, Chem Phys Lett 299 Ž1999 237 20 Y.H Tang et al.r Chemical Physics Letters 314 (1999) 16–20 w9x D.P Yu, Z.G Bai, Y Ding,...
Ngày tải lên: 16/03/2014, 15:08
Silicon nanowires grown on si(1 0 0) substrates via thermal reactions with carbon nanoparticles
... seems to be the key reaction for the formation of Si nanowires by thermal evaporation of pure SiO [23] or mixed Si–SiO2 [24] powders Similarly, in our case a possible reaction route leading to the ... (2001) 18 [3] H.F Yan, Y.J Xing, Q.L Hang, D.P Yu, Y.P Wang, J Xu, Z.H Xi, S.Q Feng, Chem Phys Lett 323 (2000) 224 [4] X.C Wu, W.H Song, K.Y Wang, T Hu, B Zhao, Y.P Sun, J.J Du, Chem Phys Lett 336 ... (2001) 53 [5] N Wang, Y.H Tang, Y.F Zhang, C.S Lee, I Bello, S.T Lee, Chem Phys Lett 299 (1999) 237 [6] Y.F Zhang, Y.H Tang, H.Y Peng, N Wang, C.S Lee, I Bello, S.T Lee, Appl Phys Lett 75 (1999)...
Ngày tải lên: 16/03/2014, 15:08
Si nanowires synthesized with cu catalyst
... Foundation of China (NNSFC 10334060) and National Basic Research Program of China (973 Program 2005CB 6236 06) is gratefully acknowledged The authors also thank Mr Liguo Xu for his helpful assistant work...
Ngày tải lên: 16/03/2014, 15:12
Ultrafast growth of single crystalline si nanowires
... Zhang, Nano Lett (2003) 475 [3] Xin yuan Zhao, M Wei, L Yang, M.Y Choul, Phys Rev Lett 92 (2004) 236 805 [4] N Wang, Y.H Tang, Y.F Zhang, D.P Yu, C.S Lee, I Bello, S.T Lee, Chem Phys Lett 283 (1998) ... Phys 94 (2003) 6005 [8] T.Y Tan, S.T Lee, U Gosele, Appl Phys., A Mater Sci Process 74 (2002) 423 [9] R.S Wagner, W.C Ellis, Appl Phys Lett (1964) 89 [10] Junjie Niu, Jian Sha, Xiangyang Ma,...
Ngày tải lên: 16/03/2014, 15:13
Characteristics of siox nanowires synthesized via the thermal heating of cu coated si substrates
... helical-shaped nanowires have been fabricated previously using the VLS method [10,13–16, 19–21 ,23, 24] The growth of the SiOx nanowires in the present study can be divided into several steps In ... 125 (2003) 629 [22] Z Zhang, G Ramanath, P.M Ajayan, D Golberg, Y Bando, Adv Mater 13 (2001) 197 [23] R Ma, Y Bando, Chem Phys Lett 377 (2003) 177 [24] S.H Sun, G.W Meng, M.G Zhang, Y.T Tian, T...
Ngày tải lên: 16/03/2014, 15:14
Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition
... Tomiya, S Usui, H Ruda, J Vac Sci Technol B 15 (1997) 554 [7] Yiying Wu, Peidong Yang, J Am Chem Soc 123 (2001) 3166 [8] B Ressel, K.C Prince, S Heun, Y Homma, J Appl Phys 93 (2003) 3886 [9] W.-C Yang,...
Ngày tải lên: 16/03/2014, 15:15
Formation of silicon oxide nanowires directly from au si and pd–au si substrates
Ngày tải lên: 16/03/2014, 15:16
Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)
Ngày tải lên: 16/03/2014, 15:17
Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of si nanowires
... MIEL 2000 [6] A.I Klimovskaya, I.V Prokopenko, I.P Ostrovskii, J Phys.: Condens Matter 13 (2001) 5 923 [7] A.I Klimovskaya, I.V Prokopenko, S.V Svechnikov, J Phys.: Condens Matter 14 (2002) 1735 [8]...
Ngày tải lên: 16/03/2014, 15:18