... layers It was shown that thinness-related effects decrease the PL for thinfilmsby a factor of These effects are mainly due to three origins: (1) high stress prevailing in thinfilms that inhibits ... as: Cueff et al.: Thickness-dependent optimization of Er3 + light emission from silicon- richsiliconoxidethinfilms Nanoscale Research Letters 2011 6:395 Submit your manuscript to a journal ... 1020 at cm-3 The Si excess was evaluated by two methods: X-ray photoelectron spectroscopy (XPS) exploring beyond 100-nm depth (or total thickness for thinner films) in different places, and Fourier...
... multiferroic BiFeO3 thinfilms on silicon with the Pt buffer by the method of PLD; investigate ferroelectric, ferromagnetic and magnetoelectric properties of these Ba-doped BiFeO3 thinfilms on silicon and ... layers on silicon for growth of high quality magnetic oxide film on silicon; study the growth mechanism of these buffer layers on silicon Fabricate high quality magnetic oxidefilms on silicon ... single orientation by the method of pulsed laser deposition (PLD); investigate the growth mechanism of high quality MgO films on silicon Fabricate highly oriented CoFe2O4 films on silicon with the...
... of porous titania thin films by a novel route for possible applications as fast responding chemical gas sensors A simple method was adopted to grow titanium dioxide thin films by thermal oxidation ... also be generated in a titania matrix by potentiostatic electrochemical etching as well as potentiostatic photo-electrochemical etching Sugiura et al [9,10] fabricated TiO2 nano-honeycomb structure ... field the electrons so attached with the vacancies/defects can easily migrate within the matrix thereby leading to extrinsic electronic conductivity The electron concentration in the oxide matrix...
... of sputtered ZnO thinfilms The following other semiconducting oxide films, e.g SnO2, WO3, CTO and V2O5 were investigated and compared with ZnO films These oxides films were fabricated onto a ... conductive oxide electrodes [18, 19] For the investigation of gas sensor performance of sputtered ZnO films, micro arrays were fabricated onto bulk silicon wafers with interdigited Pt electrodes ... semiconducting oxidethinfilms with microelectronics and MEMS would provide opportunities for developing unique sensor systems Electroceramics Micro Sensors & Actuators FRAM Microelectronics MEMS...
... thinfilms grown bychemical bath deposition Thin Solid Films 2009, 518:1259-1262 Liu F, Lai Y, Liu J, Wang B, Kuang S, Zhang Z, Li J, Liu Y: Characterization of chemical bath deposited CdS thin ... Zinc sulfide thinfilms deposited by RF reactive sputtering for photovoltaic applications Appl Surf Sci 2003, 212213:305-310 Roy P, Ota JR, Srivastava SK: Crystalline ZnS thinfilmsbychemical bath ... thinfilms grown by atomic layer deposition for electroluminescent applications Appl Surf Sci 2004, 229:105-111 12 Zhang R, Wang B, Wei L: Influence of RF power on the structure of ZnS thin films...
... summary, the presence of voids during the growth of thin SiC layers by solid–gas phase epitaxy has been confirmed experimentally by scanning electron microscopy and micro-Raman spectroscopy The ... enhancement by a factor of *5 This was confirmed experimentally by Raman line-mapping measurements for the sample with an *800-nm-thick SiC layer, where enhancement of the Raman signal by a factor ... the thin SiC layer grown on Si (111) has reasonably good crystalline quality; this was confirmed by energy dispersive X-ray analysis in Ref [17] A large enhancement of the Raman peak intensity, by...
... properties of titanium dioxide (TiO2) thinfilms grown by pulsed laser deposition (PLD) technique Single crystal TiO2 and tantalum (Ta) doped TiO2 (Ti1-xTaxO2) thinfilms of different thicknesses ... magnetic properties of epitaxially grown transition metal doped TiO2 thinfilmsby pulsed laser deposition technique on different metal oxide substrates Crystal Structure of TiO2 TiO2 is a wide band ... vacancy was reported by Zhang25 They observed signatures of Kondo effect below 100 K in 5% Nb doped anatase TiO2 thinfilms grown under 10-4 Torr oxygen partial pressure by pulsed laser deposition...
... NiO thinfilmsfabricatedby thermal oxidation of evaporated Ni film are also characterized for comparison with the sputtered films 2.1.2 Solution growth of NiO thin film Solution-based NiO thin ... the oxide- metal interface through the reaction among OH-, O2- and Al3+, the dissolution of the oxide at the electrolyte -oxide interface results in thinning of the oxide layer In an acidic electrolyte, ... Nanostructures by Thermal Oxidation 2.2.1 Fabrication of Ni nanowires Nanowire structures can be fabricatedbychemical vapor deposition [16, 17], templateassisted sol-gel [18] and electrochemical...
... sputtered tin oxidefilms At a substrate temperature of 150°C, the tin oxidefilms had a bandgap P-type transparent conducting Cu-Al-O thinfilms 87 Chapter ... transparent conducting Cu-Al-O thinfilms 77 Chapter Properties of Cu-Al-O films grown from acac precursors Wang Yue (a) (b) (c) Figure 4-17 Morphology of 350°C annealed films which were grown at ... Cu-Al-O thinfilms 79 Chapter Properties of Cu-Al-O films grown from acac precursors Wang Yue range Above about 500nm, the film at 6sccm showed the lowest transmittance, while other films showed...
... observed by XRD β-CuAlO2 detected by XRD decomposed to Cu2O under electron bombardment or upon heating P-type transparent conducting Cu-Al-O thinfilms ... Cu-Al-O thinfilms 149 Chapter Properties of Cu-Al-O films grown from dpm precursors Wang Yue 5.5 Summary In this chapter, dipivaloylmethanate precursors were used to prepare copper aluminum oxidethin ... Cu-Al-O thinfilms 151 Chapter Properties of Cu-Al-O films grown from dpm precursors Wang Yue References: A E Turgambaeva, A F Bykov and I K Igumenov, J de Physique IV 5, C5-221 (1995) A F Bykov,...
... Cu-Al-O thinfilms prepared by plasma enhanced chemical vapor deposition, Mater Sci and Eng B 85, 131134 (2001) Y Wang, H Gong and L Liu, Crystal structure and properties of Cu-Al-O thin films, ... conducting Cu-Al-O thinfilms 11 Chapter Literature Review Wang Yue Chapter Literature Review The first transparent conducting oxide was reported in 1907 by Badeker.1 He showed that thinfilms of Cd ... (2002) Y Wang and H Gong, The growth and characterization of copper-based oxidethinfilms produced by plasma enhanced chemical vapor deposition, proceedings of the 2nd international conference...
... Systemic Study of Indium Zinc OxideThinFilms 32 Transparent Amorphous Indium Zinc OxideThinFilms B Kumar Chapter Transparent Amorphous Indium Zinc OxideThinFilms 3.1 Introduction This chapter ... Indium Zinc OxideThinFilms 19 Experimental Techniques B Kumar X-ray emission (a) (b) (c) Fig (a) Irradiation of the atom by electron beam; (b) generation of secondary electron by electron beam; ... iii Summary Indium Zinc Oxide (IZO) thinfilms were deposited by RF magnetron co-sputtering of indium oxide and zinc oxide targets Both amorphous and crystalline thinfilms were prepared at 200°C...
... Summary Copper aluminium oxidethinfilms were prepared by plasma-enhanced chemical vapor deposition The optical and mechanical properties of the films were investigated by the Z-scan technique ... study its synthesis methods, electrical conductivity, and optical transmittance Besides the pulsed laser deposition method, copper aluminium oxidefilms are now fabricatedby other methods, such as ... Transparent Conducting OxideThin Films, Thin Solid Films, 443, pp 60–65, 2003 [5] Studenikin S A and Cocivera M., Time-resolved Luminescence and Photoconductivity of Polycrystalline ZnO Films, Journal...
... with CdSe by this principle But until now, no one has combined iron oxide nanoparticles and CdTe by amino group In this study, we prepare bi-functional silica nanospheres doped with iron oxide nanoparticles ... oxide and CdTe nanoparticles in the final samples Conclusions In summary, multifunctional silica spheres which were composed of CdTe and iron oxide nanoparticles was prepared by a convenient method ... Shuangchuan Chemical Reagent Factory, China TEOS was purchased from Tianjin Chemical Reagent Company, China 3-aminopropyltrimethoxysilane (APTMS) was commercially available from Fluka Other routine chemicals...
... on varying weight percentage of alumina particles MATERIALS AND EXPERIMENTAL METHODS The composites were prepared by powder metallurgy route Characterizations of raw powders were carried out ... 03-065-4899 (C) - Iron - alpha-Fe - Y: 74.11 % - d x by: - WL: 1.5406 - Cubic - a 2.86700 - b 2.8 01-085-1336 (C) - Chromium - Cr - Y: 2.00 % - d x by: - WL: 1.5406 - Cubic - a 2.88494 - b 2.88 00-010-0173 ... (c) 10%; (d) 15%; (e) 20% and (f) 25% CONCLUSION Composites powders of Fe-Cr-Al2O3 have been fabricatedby powder metallurgy route The varying weight percentage of alumina particles studied have...
... techniques in thin film technology for preparing thin solids films of almost any material Some of the advantages of sputtering as thin film preparation method over other thin film fabrication methods ... TiO2 ThinFilmsby Laser Ablation Surf Eng 15: 411–414 Sankur, H., and R Hall 1985 Thin Film Deposition by Laserassisted Evaporation Appl Opt 24: 3343–3347 George, J 1992 Preparation of ThinFilms ... Treflon-impregnated disks, single crystals, and thinfilms Conventionally, TLD phosphor is fabricated utilizing various methods such as crystal growth technique, electrochemical oxidation [9,10], sol-gel...
... caused by the diameter decrease of the SiNWs [21] Conclusion A large-scale crystalline SiNWs on silicon wafers and Al2 O3 templates were fabricatedby the thermal evaporation of silicon monoxide ... composition was detected by energy-dispersive X-ray spectroscopy (EDS) attached to the SEM Results and discussion Fig shows the TEM images of the symmetrical SiNWs generated on a silicon wafer and an ... SiO and the Al2 O3 substrate, respectively Fig TEM images of the SiNWs produced by thermal evaporation of SiO on a silicon wafer (I, the upper right inset is the SAED image taken from the corresponding...
... nanocrystalline ZnO:Ga films deposited by plasmaenhanced chemical vapor deposition Thin Solid Films 2005, 473:35-40 36 Cebulla R, Wendt R, Ellmer K: Al-doped zinc oxidefilms deposited by simultaneous ... current sputtered zinc oxidefilms J Vac Sci Technol A 2002, 20:2084-2095 Tan ST, Chen BJ, Sun XW, Fan WJ: Blueshift of optical band gap in ZnO thinfilms grown by metal-organic chemical- vapor deposition ... 1/2 [39] The optical bandgap energy for our films is closest to films deposited by spray pyrolysis (3.26 eV) [41] and close to films deposited by other methods such as CVD (3.19 to 3.23 eV) [42]...
... The Nd-doped silicon- richsiliconoxide (SRSO) thin layers were synthesized by reactive magnetron co-sputtering Their microstructures were examined using highresolution transmission electron microscopy ... Nd3+-doped silicon- richsiliconoxidefilms Mater Sci Eng 2008, 146:179 14 Bréard D, Gourbilleau F, Belarouci A, Dufour C, Rizk R: Nd3+ photoluminescence study of Nd-doped Si -rich silica films obtained ... Effect of the Nd content on the structural and photoluminescence properties of silicon- richsilicon dioxide thinfilms Nanoscale Research Letters 2011 6:161 Submit your manuscript to a journal...
... to InkTech Inc.), was diluted to 1–10 wt% using the product-customized thinner Its images were analyzed by transmission electron microscopy (TEM; Fig 1) The deposition and transformation process ... wafer-scale silicon substrate to form 1571 Fig TEM image of as-received silver nanoparticles a multilayered nanosilver film (Fig 2a) and transformed to an isolated random array of nanosilver islands by ... increased from 58.1 nm for wt% to 62.6 nm for wt% by a rate of 7.7% at a spin speed of 4,000 rpm, whereas the average size increased from 69.5 nm to 79.3 nm by a rate of 14.1% at 2,000 rpm in the central...