phương pháp ccvd combustion chemical vapor deposition

... organometallic chemical vapor deposition (OMCVD), metal-organic vapor phase epitaxy (MOVPE—the name used by one of the most important conferences), organometallic pyrolysis, or metal-alkyl vapor phase ... material, including vapor pressure, thermal stability, and source packaging Growth conditions, materials purity and chemical interactions between species will be discussed in Sec on deposition chemistry ... materials Thus, TMGa has a vapor pressure of 65.4 Torr at 0°C while triethyl Ga (TEGa) has a vapor pressure of only 4.4 Torr at the much higher temperature of 20°C.[24] The lower vapor pressure of TEGa...

Ngày tải lên: 14/02/2014, 03:20

... gases (Oxford Instruments Plasmalab System 100) The process parameters used for the silicon nitride deposition were as follows: flow rates of SiH4 =NH3 =N2 ¼ 20=40=600 sccm, temperature is 300  C, ... at room temperature The source/drain electrodes of TFTs were next realized by the electron-beam evaporation of Ti/Pt/Au (20/30/150 nm) metal layers and the lift-off process The TFT fabrication process ... O Seo, H Choi, and B Lee: Appl Phys Express (2008) 041202 25) G B Stringfellow: Organometallic Vapor- Phase Epitaxy: Theory and Practice (Academic Press, New York, 1998) 2nd ed., p 26) C W Chen,...

Ngày tải lên: 05/03/2014, 21:20

... nondoped ZnO film and a nitrogen doped one are deposited by plasma-assisted metal-organic chemical vapor deposition (MOCVD) We have investigated their structural and optical qualities and found ... bubbler and saturated with DEZn vapor to the reactor N2 was used as the carrier gas The substrate was cleaned in acetone, methanol, deionized water, and then chemical etched in H2SO4 : H3PO4=3 ... whose c-axis length is ( 5.2071 A, 2y=34.428 This can be ascribed to tensile stress induced by the deposition process The o-rocking curves are shown in the inset of Fig It shows that ZnO grows in...

Ngày tải lên: 05/03/2014, 21:20

... SAED pattern; (b) HREM image of a typical SiNW 50 Y.F Zhang et al / Chemical Physics Letters 330 (2000) 48±52 After the deposition, the color of the nanowires changed to black Fig 2a showed ... temperature increased further to 1100°C, 52 Y.F Zhang et al / Chemical Physics Letters 330 (2000) 48±52 Fig (a) TEM image of the nanowires with carbon deposition at 1100°C, and a higher magni®cation image ... Y.F Zhang et al / Chemical Physics Letters 330 (2000) 48±52 Experimental The as-grown Si NWs used in the present experiment...

Ngày tải lên: 16/03/2014, 15:04

... single-crystal SiNWs with well-defined structures at the lower temperature Summary In conclusion, by chemical vapor deposition of silane, the large-scale SiNWs were grown under the catalysis of Fe particles ... deposited into the bottom of the AAO pores using an alternating current (AC) electrodeposition method Electrodeposition was carried out in a ammonium iron (II) sulfate hexahydrate (NH4)2Fe(SO4)2 ... a length 202 C Li et al / Chemical Physics Letters 411 (2005) 198–202 not only have a size-confined effect on the growth of SiNWs, but also facilitate the pyrolysis and deposition of silane on iron...

Ngày tải lên: 16/03/2014, 15:06

... SiNWs catalyzed by metal particles is usually considered to be a vapor liquid–solid Fig XRD spectrum of SiNWs arrays 546 M Lu et al / Chemical Physics Letters 374 (2003) 542–547 mechanism However, ... temperature, 900 °C Then a flow of SiH4 was introduced at the same rate with H2 (10 ml/min) for h After deposition, the SiH4 and H2 flows were turned off, and the sample was cooled to room temperature in ... support a sample in TEM measurement The presence of trace of P confirms our previous 544 M Lu et al / Chemical Physics Letters 374 (2003) 542–547 Fig (a) TEM image of a single SiNW, (b) SAED pattern...

Ngày tải lên: 16/03/2014, 15:08

... evolution of Si-NWs on Si substrates grown by nanoscale Au–Si island-catalyzed rapid thermal chemical vapor deposition (RTCVD) The initial nucleation of the NWs from the Au–Si islands is examined ... into Au–Si droplets will lead to increasing Si chemical potential in the liquid droplets with a relationship of DmSi ¼ kT ln p, where DmSi is Si chemical potential in the liquid droplets and p ... ¼ 1:50) for and then flushed by dry nitrogen The cleaned wafers were transferred into an e-beam evaporator chamber to deposit 1.2–3.0 nm thick Au films with a growth rate of 0.01 nm/s at room temperature...

Ngày tải lên: 16/03/2014, 15:15

Ngày tải lên: 16/03/2014, 15:19

... when they are exposed to ethanol gas Experimental In this work, microwave plasma enhanced chemical vapor deposition (MPECVD) was used to synthesize the carbon nanotubes An iron-containing compound...

Ngày tải lên: 20/03/2014, 13:06

... nanotubes array by plasmaenhanced chemical vapor deposition (PECVD) process using electrospun-suspended polymer fiber array as template are reported The morphology and chemical compositions of SiOx ... was 60 W Then, silane gas with the concentration of 2% flowed into the chamber for the coating The deposition pressure was 130 Pa After coating, the aligned core–shell nanofibers were transferred ... Lett (2010) 5:279–285 Hitachi S-4800) and transmission electron microscope (TEM, JEM-2010, 200 kV) Chemical compositions of the nanotubes were detected using an energy-dispersive spectrometer (EDS)...

Ngày tải lên: 22/06/2014, 00:20

... plenty of amorphous carbons Conclusions A temperature window of SWCNTs growth by catalytic chemical vapor deposition of CH4 over Mo-Fe/MgO catalyst has been studied The results suggest that when...

Ngày tải lên: 22/06/2014, 00:20

... pretreatment on the synthesis of MWCNTs on a Ni/TaN/Si substrate by using a microwave plasma chemical vapor deposition (MPCVD) system are investigated The structure and composition of Ni catalyst ... performed at different H2 flow ratios (100, 200, and 300 sccm) in a 915-MHz microwave plasma chemical vapor deposition (MPCVD) system This procedure converted the Ni layer in Ni nanoparticles distributed ... were 6-inch p-Si(100) wafers which were cleaned using standard RCA cleaning procedures to remove chemical impurities and particles For the growth of MWCNTs, three steps were followed: (1) a 7-nm...

Ngày tải lên: 22/06/2014, 01:20

... deposition resulted in large change of the oxygen quantitative component in samples from 7% to 51%; the morphologies of the samples varied from particle-based film to nanorods array, and the chemical ... of the samples prepared under OGC of (a) 0.3% and (b) 0.7% in mixture gases at 400 °C for h of deposition Differences between the two surface structures were distinguishable Generally, low OGC ... OGC, the carbon content inside the sample was higher than that of oxygen Therefore, two possible chemical states might coexist inside the sample One was tungsten oxide together with tungsten carbide...

Ngày tải lên: 22/06/2014, 18:20

... photoluminescence (PL) study on strained Si/Si0.66Ge0.34 CQWs grown by ultra high vacuum chemical vapor deposition (UHV-CVD) The Ge fraction in our SiGe QW samples is about twice the Ge fraction ... 10DI:2H2O2:1NH4OH (by volume), then dipped into dilute HF (DHF) solution comprising 200H2O:1HF for before deposition Figure shows the schematic diagrams of the structures and growth conditions of the three ... single-wafer epitaxy reactor The chamber pressure is below 10–9 Pa The reactant gases used for the deposition are disilane (Si2H6) and germane (GeH4) P-type (boron doped at 2.5 · 1015 cm–3) Si (100)...

Ngày tải lên: 22/06/2014, 22:20

... substrate, (c) chemical reaction takes place, (d) desorption of adsorbed species, and (e) diffusion out of by­products through boundary layer. Adapted from H. O. Pierson, Handbook of Chemical Vapor Deposition,  Noyes Publications, ... Surface reaction limited growth in CVD. Adapted from H. O. Pierson, Handbook of Chemical Vapor Deposition,  Noyes Publications, Park Ridge (1992) A deposition limited by mass transport is controlled by the diffusion of reactants through the boundary ... Mass transport limited growth in CVD. Adapted from H. O. Pierson, Handbook of Chemical Vapor Deposition,  Noyes Publications, Park Ridge (1992) Feed rate limits the deposition when nearly all the reactant is consumed in the chamber. The feed...

Ngày tải lên: 17/10/2016, 08:43

... gây ô nhiễm môi trường phương pháp mạ điện hóa truyền thống Quá trình PVD gồm ba bước chính: hóa vật liệu phủ (evaporation), vận chuyển (transition) lắng đọng tạo màng (deposition) mô tả Hình ... mẫu, tính toán đưa độ cứng màng [5, 6] Chiều dày màng TiN đo phương pháp KALOTEST, sử dụng thiết bị VEB Elmo Hartha (Đức) Theo phương pháp này, mẫu phủ màng TiN đặt tiếp xúc với viên bi cầu đường ... rộp bất thường bề mặt Độ bám dính lớp màng kiểm tra phương pháp truyền thống dùng băng dính dán keo epoxy dán lên bề mặt mẫu giật mạnh theo phương vuông góc với bề mặt Lớp màng không bị bong sau...

Ngày tải lên: 08/06/2016, 07:12

Ngày tải lên: 12/03/2015, 14:47

... Hệ thống sản xuất tiên tiến Mục lục Khái quát phương pháp tạo mẫu nhanh 1.1 Giới thiệu sơ lược phương pháp tạo mẫu nhanh 1.2 Sự phát triển công nghệ tạo mẫu nhanh 1.3 Lý ... HVTH: Đặng Đức Quang Trang Hệ thống sản xuất tiên tiến Khái quát phương pháp tạo mẫu nhanh (RP) 1.1 Giới thiệu sơ lược phương pháp tạo mẫu nhanh Công nghệ tạo mẫu nhanh (Rapid Prototyping – RP) ... Manufacture (LOM): phương pháp dùng tia laser CO2 cắt vật liệu dạng mỏng (thường giấy) theo đường biên mặt cắt mẫu, sau dùng nhiệt độ làm nóng chảy keo bề mặt để dán mặt cắt với Phương pháp phù hợp...

Ngày tải lên: 04/08/2015, 11:35

Ngày tải lên: 03/08/2012, 13:43

Ngày tải lên: 03/08/2012, 21:04