2N3819 Vishay Siliconix Document Number: 70238 S–04028—Rev. D ,04-Jun-01 www.vishay.com 7-1 N-ChannelJFET PRODUCT SUMMARY V GS(off) (V) V (BR)GSS Min (V) g fs Min (mS) I DSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: A V = 60 @ 100 mA D Wideband High Gain D Very High System Sensitivity D High Quality of Amplification D High-Speed Switching Capability D High Low-Level Signal Amplification D High-Frequency Amplifier/Mixer D Oscillator D Sample-and-Hold D Very Low Capacitance Switches DESCRIPTION The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet. 1 TO-226AA (TO-92) Top View S D G 2 3 ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature ( 1 / 16 ” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . . Power Dissipation a 350 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes a. Derate 2.8 mW/_C above 25_C 2N3819 Vishay Siliconix www.vishay.com 7-2 Document Number: 70238 S–04028—Rev. D ,04-Jun-01 SPECIFICATIONS (T A = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ a Max Unit Static Gate-Source Breakdown Voltage V (BR)GSS I G = –1 mA , V DS = 0 V –25 –35 Gate-Source Cutoff Voltage V GS(off) V DS = 15 V, I D = 2 nA –3 –8 V Saturation Drain Current b I DSS V DS = 15 V, V GS = 0 V 2 10 20 mA V GS = –15 V, V DS = 0 V –0.002 –2 nA Gate Reverse Current I GSS T A = 100_C –0.002 –2 mA Gate Operating Current c I G V DG = 10 V, I D = 1 mA –20 Drain Cutoff Current I D(off) V DS = 10 V, V GS = –8 V 2 pA Drain-Source On-Resistance r DS(on) V GS = 0 V, I D = 1 mA 150 W Gate-Source Voltage V GS V DS = 15 V, I D = 200 mA –0.5 –2.5 –7.5 Gate-Source Forward Voltage V GS(F) I G = 1 mA , V DS = 0 V 0.7 V Dynamic f = 1 kHz 2 5.5 6.5 Common-Source Forward Transconductance c g fs V DS = 15 V V = 0 V f = 100 MHz 1.6 5.5 mS Common-Source Output Conductance c g os V GS = 0 V f = 1 kHz 25 50 mS Common-Source Input Capacitance C iss 2.2 8 Common-Source Reverse Transfer Capacitance C rss V DS = 15 V, V GS = 0 V, f = 1 MHz 0.7 4 pF Equivalent Input Noise Voltage c e n V DS = 10 V, V GS = 0 V, f = 100 Hz 6 nV⁄ √Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH b. Pulse test: PW v300 ms, duty cycle v2%. c. This parameter not registered with JEDEC. TYPICAL CHARACTERISTICS (T A = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 500 0 –10–6 300 0 100 60 0 r DS g os r DS @ I D = 1 mA, V GS = 0 V g os @ V DS = 10 V, V GS = 0 V f = 1 kHz Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 0 –10 0 10 0 I DSS g fs V GS(off) – Gate-Source Cutoff Voltage (V) 80 40 20 400 100 200 –2 –4 –8 V GS(off) – Gate-Source Cutoff Voltage (V) 6 8 4 2 –6–2 –4 –8 12 16 4 8 I DSS @ V DS = 15 V, V GS = 0 V g fs @ V DS = 15 V, V GS = 0 V f = 1 kHz gos – Output Conductance (mS) I DSS – Saturation Drain Current (mA) r DS(on) – Drain-Source On-Resistance ( Ω ) g fs – Forward Transconductance (mS) 2N3819 Vishay Siliconix Document Number: 70238 S–04028—Rev. D ,04-Jun-01 www.vishay.com 7-3 TYPICAL CHARACTERISTICS (T A = 25_C UNLESS OTHERWISE NOTED) 10 0 2 8 6 4 Gate Leakage Current 01020 5 mA 0.1 mA 100 nA 10 nA 1 nA 100 pA 10 pA 1 pA 0.1 pA 0.1 mA I GSS @ 25_C T A = 25_C T A = 125_C 5 mA I GSS @ 125_C Output Characteristics Output Characteristics Common-Source Forward Transconductance vs. Drain Current 0.1 1 10 10 2 0 V GS (off) = –3 V T A = –55_C 125_C 10 04 10 0 –0.2 V –0.4 V –0.6 V –0.8 V –1.2 V –1.0 V V GS = 0 V 15 010 0 –0.6 V –0.9 V –1.2 V –1.5 V –1.8 V V GS = 0 V –0.3 V V DG – Drain-Gate Voltage (V) I D – Drain Current (mA) V DS – Drain-Source Voltage (V) V DS – Drain-Source Voltage (V) V GS – Gate-Source Voltage (V) Transfer Characteristics V GS(off ) = –2 V T A = –55_C 125_C V GS – Gate-Source Voltage (V) Transfer Characteristics T A = –55_C 125_C V GS(off) = –3 V 8 6 4 V DS = 10 V f = 1 kHz V GS (off) = –2 V V GS (off) = –3 V 2 8 6 4 268 4268 3 12 9 6 V DS = 10 V V DS = 10 V 10 0 2 8 6 4 0 –0.8 –20 –3–0.4 –1.2 –1.6 –1.2–0.6 –1.8 –2.4 1 mA 1 mA 25_C 25_C 25_C –1.4 V g fs – Forward Transconductance (mS) I G – Gate Leakage I D – Drain Current (mA) I D – Drain Current (mA)I D – Drain Current (mA) I D – Drain Current (mA) 2N3819 Vishay Siliconix www.vishay.com 7-4 Document Number: 70238 S–04028—Rev. D ,04-Jun-01 TYPICAL CHARACTERISTICS (T A = 25_C UNLESS OTHERWISE NOTED) V GS – Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 10 0 –0.8 –2 8 0 V GS(off) = –2 V T A = –55_C 125_C V GS – Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltgage 10 –3–0.60 0 T A = –55_C 125_C V GS(off) = –3 V I D – Drain Current (mA) I D – Drain Current (mA) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current 0.1 1 10 300 0 T A = –55_C –3 V V GS(off) = –2 V 100.1 100 0 Assume V DD = 15 V, V DS = 5 V R L + 10 V I D V GS(off) = –2 V –3 V Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 5 0 –20–4 0 f = 1 MHz V DS = 0 V V DS = 10 V 3.0 0 –20 0 V DS = 0 V V DS = 10 V V GS – Gate-Source Voltage (V) V GS – Gate-Source Voltage (V) f = 1 MHz V DS = 10 V f = 1 kHz V DS = 10 V f = 1 kHz 6 4 2 240 180 120 60 8 6 4 2 80 60 40 20 1 –0.4 –1.6–1.2 –1.2 –1.8 –2.4 4 3 2 1 –8 –12 –16 –4 –8 –12 –16 2.4 1.8 1.2 0.6 A V + g fs R L 1 ) R L g os 25_C 25_C g fs – Forward Transconductance (mS) g fs – Forward Transconductance (mS) r DS(on) – Drain-Source On-Resistance ( Ω ) A V – Voltage Gain C iss – Input Capacitance (pF) C rss – Reverse Feedback Capacitance (pF) 2N3819 Vishay Siliconix Document Number: 70238 S–04028—Rev. D ,04-Jun-01 www.vishay.com 7-5 TYPICAL CHARACTERISTICS (T A = 25_C UNLESS OTHERWISE NOTED) Reverse Admittance Output Admittance Input Admittance Forward Admittance 100 10 1 0.1 100 1000 b is g is T A = 25_C V DS = 15 V V GS = 0 V Common Source (mS) 100 10 1 0.1 100 T A = 25_C V DS = 15 V V GS = 0 V Common Source (mS) –b is g fs 10 1 0.1 0.01 T A = 25_C V DS = 15 V V GS = 0 V Common Source –b rs –g rs 10 1 0.1 0.01 T A = 25_C V DS = 15 V V GS = 0 V Common Source b os g os f – Frequency (MHz) f – Frequency (MHz) f – Frequency (MHz)f – Frequency (MHz) Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current 10 100 1 k 100 k10 k 20 0 I D = 5 mA V DS = 10 V 20 0 0.1 1 10 T A = –55_C 125_C V GS(off) = –3 V I D – Drain Current (mA)f – Frequency (Hz) (mS) (mS) 200 500 1000200 500 100 1000 100200 500 1000200 500 V DS = 10 V f = 1 kHz V GS(off) = –3 V 16 12 8 4 16 12 8 4 I D = I DSS 25_C en – Noise Voltage nV / Hz g os – Output Conductance (mS) . Siliconix Document Number: 70238 S–04028—Rev. D ,04-Jun-01 www.vishay.com 7-1 N-Channel JFET PRODUCT SUMMARY V GS(off) (V) V (BR)GSS Min (V) g fs Min (mS) I DSS. Low Capacitance Switches DESCRIPTION The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low