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Nguồn tham khảo
Tài liệu tham khảo | Loại | Chi tiết | ||||||||
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1. A. Sayed, Ultra Wideband 5 W Hybrid Power Ampli fi er Design Using Silicon Carbide MESFETs (2005), pp. 11 – 29 | Sách, tạp chí |
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2. S. Prasad, H. Schumacher, A. Gopinath, High-Speed Electronics and Optoelectronics: Devices and Circuits (Cambridge university Press, Cambridge, New York), pp. 46 – 66 | Sách, tạp chí |
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5. M. Altay, Comparison and Evaluation of Various Mesfet Models-a thesis for the degree of Master of Science in the Department of Electrical and Electronics Engineering of Graduate School of Natural and Applied Sciences, of Middle East Technical University, March 2005 6. E.N. Ganesh, Simulation of GaAs MESFET and HEMT devices for RF applications. Int | Sách, tạp chí |
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7. P. Sarkar, A. Das, K.M. Ray, Electrical characteristics of AlGaN/AlNandAlGaN/GaN HEMTs- international. J. Sci. Eng. Res. 4(5), (2013). ISSN 2229-5518 | Sách, tạp chí |
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8. S.M. Sze, Semiconductor Devices Physics and Technology (Wiley, New York, 1985) 9. M. Mukherjee (ed.), Wide Band Gap Semiconductor Based High Power ATT diodes In TheMM-wave and THz Regime: Device Reliability, Experimental Feasibility and Photo-sensitivity, Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems. ISBN:978-953-307-031-5 (2010) | Sách, tạp chí |
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3. Y.A. Khalaf, Systematic Optimization Technique for MESFET Modeling (Blacksburg, Virginia, 2000), pp. 12 – 37 | Khác |
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