Chế tạo và khảo sát các senso khí trên cơ sở vật liệu zno

DAI HOC QUOC GIA HA NOI TRLfONG DAI HOC KHOA HOC 11/ NHIEN * * * bl TAI t CHE TAO VA KHAO SAT GAG SENSO KHl' TREN GO S6 VAT LIEU ZnO Ma so: QT - 01 - 32 CHl) TRI DE TAI: PGS TS Ta Dinh Canh CAC CAN BO THAM GIA: ThS Nguyen Duy Phuong ThS Nguyen Sy Hai •-•' H.A NOI - 2002 , J- •• : SOI 3AO CAO TOM TAT De tai; CHE TAO VA KHAO SAT GAG SENSO KHl • TREN CO Sd VAT LIEU ZnO Ma so: Q T - - Chu tri de tai: PGS TS Ta Dinh Canh Muc tieu de tai: Trong gan mudi lam nam nay, da cd rat nhilu net cd gang de phat triln cac loai sensa boa hgc mdi va tot han Thue te cac sensa ban dan val ran da ird ddi tugng quan trgng de phat hien va xac dinh nong cac dt chay va doe [1] Trong dd, nhiJng cd gang mdi da nghien cuu che lao cac sensa nhay hydro, vi rang la mot cac nguy hiem va rat dl chay Tir y6u eau thue te dd, muc tieu cac dl tai la bude dau nghien cuu che tao loai eau triie sensa nhay hydro: Pd/ZnO/p-Si va Pd/ZnO/Zn, de c6 the phal hien hydro vdi nong tir 20.000 ppm khdng d nhiet phong Vdi sir ban che vl thdi lugng, vl kinh phi, dl tai chi gidi han d muc lieu la danh gia sa bd cac tinh chat nhay hydro ddi vdi cac eau true sensa danh gia mot each dinh lugng va tinh lap lai va dn dinh eiia cac sensa nhay hydro eon la van dl can duge tiep tuc nghien cuu Noi dung nehien curu: De thue hi6n duge muc tieu neu d tren, dl tai da giai quyet duge cac van dl sau: + Che tao mang ZnO cd eha't lugng cao bang phuong phap phiin xa r.f magnetron tren thiet bi Univex - 450 eiia hang Leybold - Lam chu duge thiet bi Univex - 450 eiia hang Leybold - Che tao bia ZnO tir bgt ZnO eiia hang Merck bang phuang phap gdm truyin thdng tren cac thiet bi eiia du an OPEC + Che tao mang Pd bang phuang phap bde bay nhiet chan khdng, day eiia mang kim loai bien ddi tir vai chue den ban mot tram nanomel + Khao sat tinh chat eiia mang ZnO va mang Pd + Che tao to hgp eiia eau true sensa nhay Pd/ZnO/p-Si va Pd/ZnO/Zn + Danh gia nhay eiia cac sensa da che tao buong vdi cac nong hydro khae Cac ket qua dat duuc: + Dua cac thiet bi che tao mang mdng bang phiin xa catdt Univex-450 va bde bay nhiet chan khdng Univex-300 vao boat dgng cd hieu qua (tuy rang van eon thdi gian bao hanh ) + Che tao edng cac loai bia ZnO va ZnO pha tap bang phuang phap gdm truyin thdng + Tim duge che edng nghe de che tao mang ZnO va mang ZnO pha tap tren de p-Si va de thiiy tinh bang phuang phap phiin xa r.f magnetron iren ihiel bi Univex-450 + Chd tao edng mang Pd vdi cac day khae bang phuang phap bde bay nhiet chan khdng tren thiet bi Univex-300 + Khao sat eae tinh eha't cua cac mang ZnO tren de thiiy tinh + Che tao edng loai eau triie sensa nhay hydro Pd/ZnO/p-Si va Pd/ZnO/Zn va khao sat tinh chat nhay hydro vdi cac nong hydro khae tir 2000 ^ 20.000 ppm + Cdng tac nghien cuu: 1/ Ta Dinh Canh, Nguyen Ngoe Long, Nguyen Duy Phuong, Nguyen Si Hai ^' Preparation of ZnO films by R F magnetron sputtering", Comm in phys., 12, N"2 (2002) p.p 104-110 2/ Ta Dinh Canh, "Che tao va khao sat sensa nhay hydro tren ca sd mang mdng ZnO d nhiet phdng'\ Tuyen tap bao cao khoa hgc Hoi nghi khoa hgc ky thuat ludng Viet Nam Ian thu 3, Ha Ngi - 10/2001, 509 - 514 + Cdng tac dao tao : * Da hudng dan khoa luan tdt nghiep: 1/ Nguyin SI Hieu, ''Che tao va khao sat mang ZnO de thiiy tinh bang bde bay nhiet kem axetat chan khdng" Ha Ngi - 6/2001 2/ Nguyin Hong Viet, ''Che tao va khao sat mang ZnO pha tap Al tren de thiiy tinh bang phuang phap phiin xa R F magnetron", Ha Ngi- 6/2002 * Da hudng dSn luan van cao hgc: 1/ Nguyin Si Hai, " Che tao va nghien cuu mot sd tinh chat ciia mang ban d^m ZnO va ZnO pha tap Al bang phuang phap phiin xa R.F magnetron" - Ha Ngi, 9/2002 * Dang hudng dan nghien cuu sinh hudng nghien cuu Tinh hinh sur dung kinh phi Tong kinh phi duge cap : 8.000.000 d (tarn trieu dong) Thanh toan hgp dong va thue ehuyen gia 7.000.000 d Trang thidt bi khdng phai TSCD : 1.000.000 d Da thdng qua ehiing tir tai phong tai vu XAC NHAN CUA BCN KHOA CHU TRI DE TAI (Ky va ghi rd hg ten) ^d^ (Ky va ghi ro ho ten Ci^ ^ PGS.TS Le Viet Du Khirong PGS.TS Ta dinh Canh XAC NHAN CUA TRUONG OH6 H'E'J Tci'jnK'P PGS.TS Nguyen Ngoc Long BRIEF OF THE REPORT The title of the project Fabrication and Investigation of gas sensor based on ZnO material The code number: QT - 01 - 32 Main responsible person: assoc prof Dr Ta Dinh Canh Main implementation numbers: Master Nguyen Duy Phuong Master Nguyen Si Hai The objects ZnO, a II-VI compound semiconductor and a prospective material for hydrogen detection, has a very sensitive surface mainly due to surface adsorption of oxygen species The content of research Thin film ZnO (0.3 -^ 1.0 |im) has been deposited on various substrate by an r.f (13.56 MHz) magnetron sputtering of a ZnO target in an Ar atmosphere The film composition was characterized A Pd/ZnO/p-Si heterojunction and Pd/ZnO/Zn metal-active insulator-metal (MIM) were fabricated, and tested for hydrogen sensor apphieation Results: 1/ Ta Dinh Canh, Nguyen Ngoe Long, Nguyen Duy Phuong Nguyen Si Hai ^' Preparation of ZnO films by R F magnetron sputtering", Comm in phys., 12,N**2(2002)p.p 104-110 2/ Ta Dinh Canh, " Preparation and Investigation of Room - temperature Hydrogen sensors based on ZnO ", proceedings of the 3''' Vietnam metrology conference, oct 25 - 26 (2001), 509 - 514, Hanoi, Vietnam Conclusion * Obtaining the aims of the project * Training graduate students, master student and Ph.D student MUC lUC trang Mddau Chutfng 1: Phuong phap thue nghiem 1.1 Che tao mang mdng ZnO 1.1.1 Phuang phap phiin xa catdt 1.1.2 Phuang phap bde bay nhiet Chuung 2: Ket qua va bien luan 2.1 Mot sd tinh chat eiia mang ZnO 5 2.1.1 Tinh chat eau triie eiia mang ZnO 2.1.2 Tinh chat quang va huynh quang eiia mang ZnO 2.1.3 Tinh chat dien eiia mang ZnO 11 2.2 Che tao va khao sat sensa nhay hydro 2.2.1 Che tao mau 2.2.2 Sa eau triie va ban chat vat ly eiia sensa nhay 13 13 15 2.2.3 Dae tinh eiia eau triie Pd/ZnO/p-Si va Pd/ZnO/Zn ddi vdi ndng Hj khae d nhiet phong 16 2.2.4 Do nhay phu thuge vao day lap Pd 17 2.2.5 Gia edng nhiet mdi trudng hydro 20 Ket luan 22 Tai lieu tham khao 23 Phuluc 24 Md DAU Nghi6n eiin nong eiia hydro la van dl khoa hgc va edng nghe vat lieu ha'p dan nhilu nd lue nghien cuu va ung dung nhihig nam gan day Khi hydrd duge su dung nhilu nhilu nganh cong nghe d nude ta eung nhu tren the gidi Viee six dung hydro thap ky qua da tang len ciing vdi cac phat minh cac litig dung mdi vdi su trg giiip eiia ky thuat an toan Mot sd tinh chat vat ly va hoa hgc da duge khai thae de phat hien hydrd Cac cam bien hydrd vat ran dua tren cac tinh eha't dien nhi6t, ap di^n, quang dien, ban dan va dien hoa da duge thdng bao tren cac tap chi Mac dii rat nhilu sd cac cam bien sir dung kim loai Paladi (Pd) de bay hydrd, viee tim kiem cac vat lieu va cdng nghe che tao cam bien hydro van can thiet vdi nhirng dae tfnh nhu sau: ehgn Igc hoa hgc, linh thuan nghich, dap ling nhanh, nhay cao, kich thude nhd, che tao dan gian va khdng gay d nhilm mdi trudng Trong sd cac cam bien hydrd, phan Idn dua tren cac linh kien dien tir ket hgp vdi viee su dung Pd lam lap boat dgng ZnO la chat ban dan thuge nhdm A^ B^\ la vat lieu ran day hiia hen de phal hien hydrd [2], cd bl mat rat dl hap thu oxy Tuy rang, ZnO da duge khao sat de ling dung rgng rai lam cac thiet bi nhu pin mat trdi chat lugng cao [3], diing mang ZnO lam ngudn phat thu song am bl mat [4] song ca tinh chat nhay eiia ZnO vSn ehua duge khai thae hoan toan [5] Trong dl tai ehiing tdi trinh bay phuang phap che tao mang ZnO bang phuang phap phiin xa r.f magnetron, che tag va khao sat sensa nhay hydro d nhiet phong vdi eau triie lap ehuyen tiep di the Pd/ZnO/p-Si va eau triie kim loai - dien mdi - kim loai (MIM) Pd/ZnO/Zn 2000 4000 6000 8000 I 10"* 1.2 10^ Ndng dp Hydru (ppm) Hinh Su phu thupe bien doi ty ddi dien trd ciia senso vao nong dp hydro Tir dAy ta thay rAng neu chidu day ciia Idp Pd nhd ihi thdi gian phan umg se ngan Khi khdng cho khf hydro qua mAu nua, cac nguyen tir hydro khuech tan ngugc idi bd mai Pd va lai hgp de trd phan ti'r hydro hoae ket hgp vdi cac nguyen lir oxy (\6 lao Ih^nh cac phAn lir nude Dd ta qua trinh thuAn nghich Cac plian tir nha khdi bd n^t va trang thai ban dAu lai hdi phue lai KET LUAN BAng phuang phap cdng nghe kha dan gian, cluing tdi da che tao cdng senso vdi cA'u true Pd/ZnO/Zn nhay vdi khf hydro Da nghien cuu linh chat nhay khf cua cac mdu vdi mat dd hydro dai 2.000 - 10.000 ppm d nhidt dd phdng Thdi gian ph^n ung ciia la khoang vai phut va chat lugng ciia cam bien phu ihupc vao chat lugng va dp day ciia mang Pd Tai lieu tham khao: [J] S Basn, A.Dntta Materiids Cltemistry and Physies 47(1997) [2] Masoto Ega.shira, Ya.suhiro Shinuzu Mtiji iakao SIndehi Sako, Sonsors and B35 -36(196e)) pp e>2-07 Actuators 13] M Johansson, I Lundstrom ami L.G Ekedahl, J Appl Phys Vol H4 No J (I99H) pp 44-5 L 513 [4] J.G.E Gardenier,Z.M pp 7844-7854 Rittersma andG.I Bw gger .1.Appl Phys Vol 83, No 12 (1998) 15] A.M Aiad, S.A Akbar S.G.MIunsalkar L.D Birktfchl and KS Goto J Elvctrochem Soc.Vol.l39 No.l2 (1992) pp 3690-3703 [6] A.R Rajn and CNR Rho sensors and Attualtors B (1991), 305 514 COMMUNICATIONS IN PHYSICS Published by NATIONAL CENTRE FOR NATURAL SCIENCE AND TECHNOLOGY OF VIETNAM Volutne 12, Number June 2002 Contents Nguyen Ba A n and Truong Minh Due - Generation of fan-states of radiation field in a Page 65-75 cavity Ha Huy B a n g , Cao Thi Vi Ba, a n d Dang Van Soa - g - field theory 76-80 P N Gjjar, MInal H Patel, B Y Thakore, and A R Jani - Comprehensive study of static and vibrational properties of bcc CSQ ^K^ J alloy Bui Huy, Phi Hoa B i n h , Pham Van Hoi, Dao Tran Cao, Bui Q u a n g Diep, a n d Duong Quoc Hoang - Ageing effect on luminescence lifetimes of porous silicon and the role of rercombination centers 81-89 90-94 Le Van Tuat, Le Van H o n g , a n J Vu Xuan Quang - Thermally stimulated conductivity and phototransfer thermoluminescence of the CaSO^ : Dy Materials 95-103 Ta Dinh C a n h , Nguyen Ngoc L o n g , Nguyen Duy P h u o n g , and Nguyen SI Hal • Preparation of ZnO films by R F magnetron sputtering 104-110 Tran Thanh Minh - On the parameters of beta decay from Ba129 isomers and the characteristics of energy levels in Cs129 111-118 Nguyen Vu, Tran K i m A n h , Le Quoc Minh, a n d Charles B a r t h o u - Optical properties of Er^-*- doped Y^ O^ nanophosphors 119-123 Bui Thi T h a n h Lan, Le H o n g K h i e m , Chu Dinh T h u y , and Nguyen Q u a n g H u n g Inversion of the monte carlo simulation for detemination of absorption and scattering properties 124-128 Communications in Physics, Vol 12, No (2002), pp 104-110 PREPARATION OF ZnO FILMS BY R.E MAGNETRON SPUTTERING X\ DINH CANH, NGUYEN NGOC LONG, NGUYEN DUY PHUONG AND NGUYEN SI HAI Faculty of Physics - Hanoi University of Science Abstract Zinc oxide films wew pt^pm-ed by a r.f magnetron sputtering using a zinc oxide target The deposited films weie characterized as a function of deposition temperature, pressure ofargon gas, target-substrate distance Structural, optical and electrical pwperties of the deposited films were investigated High-trauspaivncy films with fvsistivity as low as X 10~ Qcm could he pjvpared by adjusting sputtering parameters Tlie energy gap of ZnO films was evaluated as 3.24 cV from optical absorption measurements, lite charge carrier densities in the range (2 - 12) x 'iO^^cmr^and mobilities of \0 -^ 40 ctv?V~^3~^ were observed L INTRODUCTION ZnO is a technological ly important material ZnO is a classical wide-gap II-VI material with a band gap corresponding to an edge emission wavelength around 370 nm The increasing use of transparent conductors in various opto-electronic devices, semiconductor/insulator/semieonductor and heterojunction solar cells and heat mirror coatings has prompted interest in the electro-optical properties of ZnO films There are many different techniques of deposition of ZnO films, such as sputtering [1 ], reactive thermal evaporation [2], spray pyrolysis [3], pulsed laser deposition [4], metal organic chemical vapor deposition (MOCVD) [5, 6], molecular beam epitaxy (MBE) [7], oxidation of metal Zn [8] In this paper we report oi the deposition of zinc oxide films from ZnO target by r.f magnetron sputtering which permits the deposition to be carried at low temperature and gives deposits of better adhesion and higher density than other methods The influence of the sputtering conditions (mainly gas pressure and r.f power) on the composition and on the structural, optical and electrical properties of ZnO films is studied PREPARATION OF ZnO FILMS BY 105 II EXPERIMENTAL ZnO coatings were deposited by an Univex 450 sputtering unit equipped with a r.f generator operating at 13.56 MHz A ZnO target (purity 99.9%) of 75 mm diameter was fixed on a cooled magnetron cathode The sputtering chamber was evacuated to x 10"*' Tbrr before admitting the sputtering gas which was either pure argon or argon-oxygen mixture adjusted by a mass flow meter, the substrates were maintained at a distance of 60 mm from the target and its temperature was risen progressively to about lOO^C during the deposition The orientation of the crystalhtes was inferred from the planes which were observed to be parallel to the substrate and this was determined by X-ray diffraction using Cu Ka radiation with an average wavelength of 1.54178 A" The film surface morphology and grain struetures were examined with a scanning electron microscope (SEM-JSM 5410 LV) using an electron beam energy of 10 keV The film transmittance in the UV-visible range was recorded by a double beam UV 3001 spectrometer The photolumineseence spectra of ZnO films were measured on FL3-22, Jobin Yvon-Spex spectrometer Ohmic aluminum contacts were vacuum deposited onto the films in a planar configuration for resistivity and Hall effect measurements III RESULTS AND DISCUSSION The prepared under optimum conditions films on glass substrate were physically stable and had very good adherence to the substrates These ZnO films are polyerystalline with a hexagonal structure and a prefened orientation with the c-axis perpendicular to the substrate The X-ray diffraction spectra for five samples deposited on glass substrate at different sputtering powers (P) 70 W, 100 W, 130 W, 160 W and 200 W are shown in Fig 3000 I 2000 • ^ 1000 - Theta - Scale Fig X- ray diffraction pattems of five ZnO samples deposited at different sputtering powers For curve a) P = 70 W, b) P - 100 W, c) P = 130 W, d) P - 160 W and e) P = 200 W TADlNIICANItctal Our results are similar to those of different deposition techniques [7] The (002) peak intetisity increases with the increase of r f power The crystallite size representing th • longitudinal coherence length in the direction perpendicular to the substrate was deduced from the (002) peak width by using the following relation [9]: ^ = ^ fi ens (,) where A is the X-ray wavelength, ft is the (002) peak half-width and is the Bragg diffraction angle The mean grain sizes of the samples are 18 nm, 25 nm, 31 nm, 36 nm and 40 nm for the samples deposited at different sputtering powers 70 W, 100 W, 130 W, 160 W and 200 W, respectively, A representative SEM picture of the deposited ZnO thin films is shown in Fig This SEM picture corresponds to a 1.59 //m thin film grown al r f sputtering power 200 W It can be observed that a homogenous distribution of small grains yields a unifomi and smooth film deposited on the glass substrate :!t.^^^:^ " ^ , i ' V ••••(' , • ii J' < -••^•^ f • *• : ^ ^•^f' Fig SEM micrograph taken on the surface of a ZnO thin film deposited on glass at power 200 W by r.f mangnetron sputtering The typical transmittance spectrum of the ZnO thin film T (A) is shown in Fig The thickness of the layer determined from the successive interference minima and maxima is 861.1 ± n m In a direct gap semiconductor, the relation between a and the energy of the mcident photon is [10]: where E^ is the energy band gap of the semiconductor , h is Planck's constant PREPARATION OF ZnO FILMS BY 107 100.0 T(-/o) 50.0 0.0 300.0 55O.0 800.0 W^ ue/eng th (nm) Fig Trasmittance spectrum of a typical ZnO film An optical absorption spectrum of ZnO films at room temperature is shown in Fig The peak in the spectrum indicates the presence of an exciton absorption (Fig 4) 5.000 ^ ^ 2.500 0.000 300.0 550.0 800.0 i^Si^e/en^t/7 (nm.) Fig Optical absorption spectrum of the ZnO film The curve \a{v).hv'f- has a linear dependance with hv (Fig 5) showing a direct transition absorption for ZnO The energy gap for our sample is 3.24 eV The value of E^ for our sample has been compared with published values [11], and show a good agreement with these values •Fig (a) shows the rooin temperature PL spectrum The peak at 379 nm (3.27 eV) is a result of free exciton recombination A low-temperature PL spectrum collected at 11 K is shown in Fig (b) The peak at 368 nm (3.368 eV) is assigned to neutral donor-bound exciton transitions, while the peak at 374 nm (3.314 eV) is assigned to neutral acceptorbound exciton transitions 108 TA DINH CANH et al 3.2 3.3 / // (et^J 3.4 Fig Plot of [Q(i/).h/y]2 against incident photon energy (hv) for ZnO film •379 The peak at A = 390nm is supposed due to donor-acceptor pairs recombination The resistivity of the ZnO films deposited on glass substrate at room temperature and argon gas pressure of 8.8 x 10-^ Torr as a function of input power is shown in Fig (a) 20000 40000 •toooo / ' 350 Fig 20000 \ < 400 450 W3ire/er?gtfy (/?m) (a) Room temperature PL of ZnO film (fc)PLofZnOfilmat 11K 370 390 410 430 If^ i/e/ength(nm) As the input power increases from 100 to 350 W, the resistivity decreases from 5.8 X 10~' to 5.1,x 10"^ Hem Higher input power seems to be favorable for making low resistivity films because the sputtered ions or clusters can obtain more energy prior to collision with the substrates This leads to two effects: + The ions or ion clusters with higher energy can easily adjust their own bond direction and length so that they obtain optimum bonding to the adjacent atoms, and this help them to nucleate and grow up 109 PREPARATION OF ZnO FILMS BY +The bombardment effect of the higher energy particles makes the substrate temperature increase gradually, and this makes the films being deposited at an increased substrate temperature too 200 300 Sputtering powen(l/i^) Fig.7 The dependence of resistivity of ZnO films on sputtering power Totally the effects of higher power not only enhance the film adherence to substrates but also increase the grain sizes due to the substrate temperature effect Indeed, as stated above, our experimental results showed that the mean grain sizes of the films increased from 18 nm to 40 nm with increasing sputtering power from 70 W to 200 W The increase in grain size reduces scattering of charge carriers at grain boundary and, subsequently, increases Hall mobility, and therefore, decreases the film resistivity IV CONCLUSION Zinc oxide films were deposited by r f magnetron sputtering process Property of the ZnO films strongly depends on sputtering parameters The oriented growth is also more pronounced when the r f power is increased The resistivity of ZnO thin film decreases when the r.f power increases The films grown at room temperature with r.f sputtering power of 350 W and argon gas pressure of 8.8 x 10^^ Torr showed a resistivity value of 5.10-3 f^cm, a carrier concentration of 2.1 x 1019 c m - \ a mobility of 35 cm^ V - ^ s ~ \ a band gap of 3.24 e y and a transmittance of about 92% in the visible range ACKNOWLEDGMENT Authors of this paper would like to express their sincere gratitude to the Center for Materials Science, Faculty of Physics, University of Science, Hanoi National University 110 lA DINH CANH et al for permission to use equipment This research was completed with financial support from the National Basic Research Program in Natural Science under the code number of 421301 REFERENCES K B Sundaram, A Khan, Tliin solidfilms, 295 (1997) 87-91 Jin Ma, Feng Ji, Hong-lei Ma, Shu-ying Li, Tlrin Solidfilms 279 (1996) 213-215 E Sreedhara Reddy, G.Raghupathi Chetty, S.Uthnna, B Srinivasulu Naidu and R Tayarama Reddy, Solid State Communications, 75, No 12 (1991) 899-901 Y F Lu, H Q Ni, Z H.Mai and Z M Ren, Appl Phys 88, No.l (2000) 498-502 Seung Jae Baik, Jae Hoon Jang, Chang Hyun Lee, Woo Yeong Cho and Koeng Su Lim Appl Phys Lett., 70 (26) (1997) 3516-3518 C R Gorla, N W Emanetoglu, S Liang, W F Mayo Y Lu, M Wraback and H Shen, / Appl Phys., 85, No (1999) 2595-2601 S Fukushima, T Obata and N Otsuka,./ Appl Phys 89 No.l (2001) 380-385 Ta Dinh Canh, Nguyen Ngoc Long, Le Thi Thanh Binh, Le \^n Vu, Nguyen Duy Phuong and Nguyen Van Khai, Comm in Phys., H, No.2 (2001) 123 - 128 B D Cullity, Elements ofX- ray Diffraction Edition Wesley Reading, M.A 1978 10 T S Moss, Optical Pmperties of Semiconductors, Buttervvooths Scientific Publication, London, 1959 11 E Dumont, B Dugnoille, S Bienfait, Tlun solid finis 353 (1999) 93-99 Received 22 January 2002 r» ',' DAI HOC QUOC GIA HA NQI r > TRU6NG DAI HOC KHOA HOC TlTNHIEN KHOA VAT LY NGUYEN SI m E U > > • CHE TAG VA KHAO SAT MANG ZnO TREN DE THUY TINH BANG B C BAY NHIET KEM AXETAT TRONG CHAN KHONG Si' KHOA LUAN T T NGHIEP HE DAI HOC CHINH QUY Nganh: Khoa hoc Vat li?u '' r "s-'f- Giao vien hirdfng dan: , TS TA DINH CANH Giao vien phan bi6n: 'Jl"'.^; TS LE THI THANH BINH Ha Noi, thang - 2001 DAI HOC QUOC GIA HA NOI TRUdNG DAI HOC KHOA HOC TUNHIEN KHOA VAT LY T* 'P 'F Nguyen Hong Viet CHE TAO VA KHAO SAT MANG ZnO PHATAP Al TREN DE THUY TINH BANG PHUONG PHAP PHUN XA RF MAGNETRON KHOA LUAN TOT NGHIEP HE DAI HOC CHINH QUY Nganh : Khoa Hoc Vat Lieu Giao vien huang din Giao vien phan bien : PGS TS Ta Dinh Canh : TS Pham Nguyen Hai Ha Noi - 2002 DAI HOC QUOC GIA HA NOI TRl/ClN(i DAI HOC KHOA HOC TlTNHIEN —^m^— JVau/ue^H fjPi ^lai Che tao va nghien ciru mot so tinh chat cua mang ban d^n ZnO va ZnO pha tap Al bling phmmg phap phun xa r.f magnetron Chuyen nganh: Vat ly chat ran Ma id: 01.02.07 LUAN VAN THAC SI KHOA HOC N(;u6i HUON(; DAN KHOA HOC: l.l'GS- TS TaDinliCanh IHiS - TS Nguyen Thi Thiic Hien Ila Noi - nam 2002 PHIEU D A N G K Y KET QUA NGHIEN CUU KH - CN Ten (fe tai: Che tao va khao sat cac sensor tren cu so vat lieu ZnO Ma so : QT - 01 - 32 Co quan chu tri de tai: Dai hoc Quoc gia Ha noi Dia chi 144 dudng Xuan thiiy, Cau giay, Ha noi Tel: 8340569 Ca quan quan ly de tai : Dai hoc KHTN - Dai hoc Quoc j^ia Ha noi Dia chi : 334 duang Nguydn Trai , Thanh xuan , Ha noi Tel: 8584615 „ T6ng kinh phi thue thi : Trong : - Tu ngan sach nha nuac : 8.000.000 d - Kinh phi nha truang : Khong - Vay tin dung : Khong - Von tu CO : Khong - Thu hoi : Khong Thdi gian nghien ciiu : nam Th&i gian bat dau : 12/2001 Thdi gian ket thiic : 12/2002 Ten can bo phoi hgp nghien cuu : ThS Nguyen Uu> pluKriiu ThS NguvL-n si Hai Tom tat ket qua nghien cuu : + Dua thiet bi phiin xa dc va r.f magnetron vao hoat dong tot + Ch6'tao cac bia ZnO va ZnO pha tap chat bing phuong pliap gom truyin thdng + Tim duge che cong nghe che tao cong cac mang ZnO tren cac loai d6 khae + Che' tao cdng loai sensor nhay hydro Pd/ZnOp-Si va Pd/ZnO/Zn va bat dau khao sat tinh nhay khf hydro o' cac nong hydrd khae tir 2.000 - 20.000 ppm + Da dao tao hgc vien cao hgc va khoa luan tdt nghic]^^ Ki6n nghi : Nd'u de tai duge cap them kinh phi, se khao sat linh 6n dinh va tang dd nhay cua sensor hydrd Chu nhiem d^ tai Ho ten Ta Dinh Canh Hoc ham PGS Hoc vi TS Thu trirang co quan chu tri d^ tai Nju^