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HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING INTRO TO ELECTRICAL AND COMPUTER ENGINEERING (ECE110) FINAL EXAMINATION Summer Semester – Academic year 2012-2013 Duration: 90 Student’s Name Score Student ID Number Lecturer om Department of Electronics Engineering C Dr Le Chi Thong nh Vi en Zo ne INSTRUCTIONS:  Answer on this question sheet  Books, notes, laptops, iPads, … are NOT accepted  Arithmetic-only calculators are accepted  Show all your work, e.g., your solution process, the equation(s) that you use, the values of the variables used the equation(s), …  Include the unit of measurement in each answer  Do NOT communicate with any other students Si Problem Use the node method to determine I2, I3, VA (1.5 points) I2= I3= VA= Page of SinhVienZone.com https://fb.com/sinhvienzonevn HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING Problem Use the “accurate” model for diode the following circuit (1.5 points) Zo ne C om a Assume that diode is on, calculate ID and verify the assumption Assumption is en ID= Si nh Vi b Assume that diode is off, calculate VD and verify the assumption VD= Assumption is Page of SinhVienZone.com https://fb.com/sinhvienzonevn HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING Problem Use the following circuit for this problem Given Vcc = 5V; VBEON = 0.7V; β = 100; VCESAT = 0.2 (2 points) IB= Zo ne C om a When Vin = 2V, determine IB, IC, VCE and the state of transistor IC= VCE= State Si nh Vi en b When Vin = 4V, determine IB, IC, VCE and the state of transistor IB= IC= VCE= State c Determine the minimum value for R1 in order to have active state when Vin = 4V R1min = Page of SinhVienZone.com https://fb.com/sinhvienzonevn HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING ID1= VD2= ID2 = en VD1= Zo ne C om Problem Use the “large signal” model for diode the following circuit and determine VD1, ID1, VD2, ID2 (2 points) Si nh Vi Problem (3 points) a Convert the following numbers 37D = ?B 101 1011B = ?D 11 1110B = ?H AF2H = ?B 37D = 11 1110B = B H 101 1011B = AF2H = Page of SinhVienZone.com https://fb.com/sinhvienzonevn D B HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING b Use the truth table given below for this problem Write the expression F1 in the canonical SOP form A 0 0 1 1 B 0 1 0 1 C 1 1 F1 1 0 0 F1 = Zo ne C om Draw the AND-OR circuit for F1 Si nh Vi en c Write the canonical SOP expression for F in the following circuit F= Page of SinhVienZone.com https://fb.com/sinhvienzonevn ... diode is off, calculate VD and verify the assumption VD= Assumption is Page of SinhVienZone. com https://fb .com/ sinhvienzonevn HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL... state of transistor IC= VCE= State Si nh Vi en b When Vin = 4V, determine IB, IC, VCE and the state of transistor IB= IC= VCE= State c Determine the minimum value for R1 in order to have active... minimum value for R1 in order to have active state when Vin = 4V R1min = Page of SinhVienZone. com https://fb .com/ sinhvienzonevn HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL

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