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HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING INTRO TO ELECTRICAL AND COMPUTER ENGINEERING (ECE110) FINAL EXAMINATION Semester – Academic year 2012-2013 Duration: 90 Student’s Name Score Student ID Number Lecturer om Department of Electronics Engineering C Dr Le Chi Thong Si nh Vi en Zo ne INSTRUCTIONS:  Answer on this question sheet  Books, notes, laptops, iPads, … are NOT accepted  Arithmetic-only calculators are accepted  Show all your work, e.g., your solution process, the equation(s) that you use, the values of the variables used the equation(s), …  Include the unit of measurement in each answer  Do NOT communicate with any other students Page of SinhVienZone.com https://fb.com/sinhvienzonevn HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING Id= en Vd= Zo ne C om Problem (2 points) Use the following circuit for this problem Given Vs = 5V; R1 = 1K; VON (of diode) = 0.7V a) Determine Id and Vd for Is = mA (Assume that diode is on or off, and then validate) Si nh Vi b) Determine Id and Vd for Is = mA (Assume that diode is on or off, and then validate) Vd= Id= Page of SinhVienZone.com https://fb.com/sinhvienzonevn HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING IC= VCE= State nh Vi IB= en Zo ne C om Problem (2 points) Use the following circuit for this problem Given Vcc = 7V; RB = 80 kΩ; Rc = kΩ; VBEON = 0.6V; β = 100; VCESAT = 0.2V a) When Vin = 1V, determine IB, IC, VCE and the state of transistor Si b) Find the minimum value of Vin required to make the transistor becomes saturated Vin = Page of SinhVienZone.com https://fb.com/sinhvienzonevn HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING Problem (2 points) a) Using Thevenin, find Eth and Rth so that Circuit B is equivalent to Circuit A R5 = Ω E = 15V R1 = Ω Rth A Eth +_ R2 = 20 Ω +_ B B Circuit A Rth= en Zo ne C om Circuit B nh Vi Eth= b) Using Norton, find IN and RN so that Circuit C is equivalent to Circuit B Si A RN IN B Circuit C Inh= Rn= Page of SinhVienZone.com A https://fb.com/sinhvienzonevn HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING C om Problem (2 points) Use the truth table given below for this problem a) Write the canonical SOP for F1 A B C F1 0 0 0 0 1 1 F1 = 0 1 1 b) Use Boolean identities to minimize the function F1 1 ne F1 = Si nh Vi en Zo c) Draw the AND-OR circuit for F1 d) Rewrite F1 and draw the 2-level NAND-NAND circuit Page of SinhVienZone.com https://fb.com/sinhvienzonevn HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING Problem (2 points) Use the following logic circuit for this problem a) Write the Boolean expression for F2 om F2 = ne C b) Write the canonical SOP for F2 Si nh Vi c) Find the truth table for F2 en Zo F2 = d) Draw the waveform for F2 X Y Z F2 Page of SinhVienZone.com https://fb.com/sinhvienzonevn ... VCE and the state of transistor Si b) Find the minimum value of Vin required to make the transistor becomes saturated Vin = Page of SinhVienZone. com https://fb .com/ sinhvienzonevn HO CHI MINH CITY... on or off, and then validate) Si nh Vi b) Determine Id and Vd for Is = mA (Assume that diode is on or off, and then validate) Vd= Id= Page of SinhVienZone. com https://fb .com/ sinhvienzonevn HO CHI... equivalent to Circuit A R5 = Ω E = 15V R1 = Ω Rth A Eth +_ R2 = 20 Ω +_ B B Circuit A Rth= en Zo ne C om Circuit B nh Vi Eth= b) Using Norton, find IN and RN so that Circuit C is equivalent to

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