Wiley RF measurements for cellular phones and wireless data systems jul 2008 ISBN 0470129484 pdf

RF MEASUREMENTS FOR CELLULAR PHONES AND WIRELESS DATA SYSTEMS ALLAN W SCOTT REX FROBENIUS RF MEASUREMENTS FOR CELLULAR PHONES AND WIRELESS DATA SYSTEMS RF MEASUREMENTS FOR CELLULAR PHONES AND WIRELESS DATA SYSTEMS ALLAN W SCOTT REX FROBENIUS Copyright # 2008 by John Wiley & Sons, Inc All rights reserved Published by John Wiley & Sons, Inc., Hoboken, New Jersey Published simultaneously in Canada No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, recording, scanning, or otherwise, except as permitted under Section 107 or 108 of the 1976 United States Copyright Act, without either the prior written permission of the Publisher, or authorization through payment of the appropriate per-copy fee to the Copyright Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, (978) 750-8400, fax (978) 750-4470, or on the web at www.copyright.com Requests to the Publisher for permission should be addressed to the Permissions Department, John Wiley & Sons, Inc., 111 River Street, Hoboken, NJ 07030, (201) 748-6011, fax (201) 748-6008, or online at http://www.wiley.com/go/permission Limit of Liability/Disclaimer of Warranty: While the publisher and author have used their best efforts in preparing this book, they make no representations or warranties with respect to the accuracy or completeness of the contents of this book and specifically disclaim any implied warranties of merchantability or fitness for a particular purpose No warranty may be created or extended by sales representatives or written sales materials The advice and strategies contained herein may not be suitable for your situation You should consult with a professional where appropriate Neither the publisher nor author shall be liable for any loss of profit or any other commercial damages, including but not limited to special, incidental, consequential, or other damages For general information on our other products and services or for technical support, please contact our Customer Care Department within the United States at (800) 762-2974, outside the United States at (317) 572-3993 or fax (317) 572-4002 Wiley also publishes its books in a variety of electronic formats Some content that appears in print may not be available in electronic formats For more information about Wiley products, visit our web site at www.wiley.com Library of Congress Cataloging-in-Publication Data: Scott, Allan W RF measurements for cellular phones and wireless data systems/Allan W Scott, Rex Frobenius p cm ISBN 978-0-470-12948-7 (cloth) Radio frequency integrated circuits—Testing Wireless communication systems—Equipment and supplies—Design and construction Cellular telephones—Equipment and supplies—Design and construction I Frobenius, Rex II Title TK7874.S36 2008 621.38450 6—dc22 2008004929 Printed in the United States of America 10 CONTENTS INTRODUCTION 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 1.10 1.11 1.12 1.13 1.14 1.15 1.16 1.17 1.18 The Market for Cellular Phones and Wireless Data Transmission Equipment / Organization of the Book / Part I: RF Principles / Summary of Chapter 2: Characteristics of RF Signals / Summary of Chapter 3: Mismatches / Summary of Chapter 4: Digital Modulation / Part II: RF Measurement Equipment / Summary of Chapter 5: RF Signal Generators / Summary of Chapter 6: Power Meters / 10 Summary of Chapter 7: Frequency Counters / 10 Summary of Chapter 8: VNAs / 14 Summary of Chapter 9: Spectrum Analyzers / 14 Summary of Chapter 10: VSAs / 17 Summary of Chapter 11: Noise Figure Meters / 17 Summary of Chapter 12: Coaxial Cables and Connectors / 19 Summary of Chapter 13: Measurement Uncertainties / 19 Summary of Chapter 14: Measurement of Components Without Coaxial Connectors / 21 Part III: Measurement of Individual RF Components / 21 v vi CONTENTS 1.19 Summary of Chapter 15: RF Communications System Block Diagram / 22 1.20 Summary of Chapter 16: Signal Control Components / 22 1.21 Summary of Chapter 17: PLOs / 22 1.22 Summary of Chapter 18: Upconverters / 24 1.23 Summary of Chapter 19: Power Amplifiers / 24 1.24 Summary of Chapter 20: Antennas / 29 1.25 Summary of Chapter 21: RF Receiver Requirements / 31 1.26 Summary of Chapter 22: RF Filters / 33 1.27 Summary of Chapter 23: LNAs / 35 1.28 Summary of Chapter 24: Mixers / 36 1.29 Summary of Chapter 25: Noise Figure Measurement / 38 1.30 Summary of Chapter 26: Intermodulation Product Measurement / 38 1.31 Summary of Chapter 27: Overall Receiver / 39 1.32 Summary of Chapter 28: RFICs and SOC / 39 1.33 Part IV: Testing of Devices and Systems with Digitally Modulated RF Signals / 41 1.34 Summary of Chapter 29: Digital Communications Signals / 42 1.35 Summary of Chapter 30: FDMA, TDMA, and CDMA Multiple Access Techniques / 44 1.36 Summary of Chapter 31: OFDM and OFDMA / 46 1.37 Summary of Chapter 32: ACP / 48 1.38 Summary of Chapter 33: Constellation, Vector, and Eye Diagrams, and EVM / 48 1.39 Summary of Chapter 34: CCDF / 51 1.40 Summary of Chapter 35: BER / 53 1.41 Summary of Chapter 36: Measurement of GSM Evolution Components / 54 1.42 Annotated Bibliography / 55 PART I RF AND WIRELESS PRINCIPLES CHARACTERISTICS OF RF SIGNALS 2.1 2.2 2.3 Electric and Magnetic Fields / 60 Electromagnetic Waves / 62 Properties of RF Waves / 63 Frequency / 64 Wavelength / 64 Impedance / 67 57 59 vii CONTENTS Power Density / 67 Phase / 68 2.4 RF Power Expressed in dB and dBm / 69 dB Terminology / 70 dBm Terminology / 72 2.5 Using dB and dBm to Determine an RF Link Budget / 73 2.6 Alternate Names for dB and dBm / 78 2.7 Annotated Bibliography / 78 MISMATCHES 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 3.10 3.11 3.12 The Mismatch Problem / 79 Ways of Specifying Mismatches / 80 Conversion Between Different Ways of Expressing Mismatch / 82 S-Parameters / 85 Matching with the Smith Chart / 87 Derivation of the Smith Chart / 89 Plotting Mismatches on the Smith Chart / 94 Matching Calculations with the Smith Chart / 99 Using Parallel Matching Elements / 103 Lumped Elements in Combination / 105 Smith Chart Software / 106 Annotated Bibliography / 111 DIGITAL MODULATION 4.1 4.2 4.3 79 113 Modulation Principles / 113 Multilevel Modulation / 115 Special Phase Modulation Techniques / 118 DPSK / 118 p/4QPSK / 119 3/8p 8PSK Modulation for EDGE / 119 4.4 4.5 4.6 PART II Digital Frequency Modulation / 120 Upconversion Requirements / 122 Annotated Bibliography / 122 RF MEASUREMENT EQUIPMENT RF SIGNAL GENERATORS 5.1 What an RF Signal Generator Does / 125 123 125 viii CONTENTS 5.2 Supported Wireless Communication Formats / 127 5.3 RF Signal Generator Displays / 127 5.4 RF Signal Generator Controls / 127 5.5 Modulation Architectures / 129 5.6 Phase Noise of the RF Signal Generator / 130 5.7 Annotated Bibliography / 130 RF POWER METERS 131 RF Power Meter Basics / 131 Power Meter Sensors / 133 A Schottky Diode for Power Measurements in Cellular Phone Systems / 134 6.4 The Power Meter Unit / 135 6.5 Power Meter Controls / 138 6.6 Annotated Bibliography / 138 6.1 6.2 6.3 FREQUENCY COUNTERS 7.1 7.2 Frequency Counter Operation / 139 Annotated Bibliography / 141 VNAs 8.1 What a VNA Does / 143 8.2 What a VNA Can Measure / 143 8.3 VNA Controls / 144 Dislay Control / 144 Channel Setup / 145 Trace Setup / 145 Entry Control / 147 8.4 8.5 8.6 8.7 8.8 VNA Display Notations / 147 Error Correction / 147 Example of VNA Measurements on an RF Part / 152 Swept Measurements on the VNA as a Function of Power / 154 Example Measurement Procedure Using the VNA / 157 Objective / 157 Measurements Being Demonstrated / 158 DUT Specifications / 161 Significance to Wireless System Performance / 161 Generic Procedure / 161 8.9 139 Annotated Bibliography / 165 143 36.3 Figure 36.13 ANNOTATED BIBLIOGRAPHY 489 CCDF range is 1.36% RMS and 4.02% peak, and the amplifier passes The EVM when the amplifier is operated at saturation is 21.29% RMS and 98.75% peak, and the amplifier fails the specification Figure 36.11 shows the I/Q error of the HSDPA signal when the amplifier is operated in the linear region and at saturation Figure 36.12 provides a spectrum emission mask Note that when the amplifier is operated its linear range, the spectrum is within the spectrum mask limits and the system passes When the amplifier is operated at saturation, the spectrum is outside of the limits and the system fails Figure 36.13 shows the CCDF of the amplifier in the linear range and at saturation Note the extreme compression of the signal when the amplifier is operated at saturation 36.3 ANNOTATED BIBLIOGRAPHY Product Note: Technical Overview with Self Guided Demonstration Option 202: GSM with EDGE Measurement Personality, Agilent Technologies, Santa Clara, CA Product Note: Technical Overview with Self Guided Demonstration Options BAF and 210: W-CDMA and HSDPA/HSUPA Measurement Personalities, Agilent Technologies, Santa Clara, CA References and are Agilent brochures describing how to make measurements of the type described in this chapter, using the software options listed TERMINOLOGY ACP ADPCM AFC AlN APC-7 ARQ BER BERT BJT BNC BPSK BTS CCDF CDMA CMOS CR CW DAC DBPSK DCS DPSK DQPSK adjacent channel power (1) adaptive differential PCM (1) automatic frequency control (28) aluminum nitride (22) Amphenol mm precision connector (12) automatic repeat request (1) bit error rate (1) bit error rate tester (35) bipolar junction transistor (19) bayonet Navy connector (12) binary phase shift keying (1) base transceiver station (15) complementary cumulative distribution function (1) code division multiple access (1) N-doped and P-doped semiconductor MOSFET (19) carriage return (29) continuous wave (9) digital to analog converter (28) differential binary phase shift keying (4) Digital Cellular System (28) differential phase shift keying (1) differential quadrature phase shift keying (1) RF Measurements for Cellular Phones and Wireless Data Systems By A W Scott and R Frobenius Copyright # 2008 John Wiley & Sons, Inc 491 492 TERMINOLOGY DSI DUT EDGE EHF ENR EVM FBAR FDMA FEC FET FSK 1G 2G 3G 4G GaAs GaN GMSK GPRS GSM HBT HDTV HEMT HET HSDPA HS-DSCH IC IF IIP3 IP3 ISM LAN LDMOS LNA LO LRM LTCC MDS MES MESFET MF MIMO MOS MOSFET digital speech interpolation (30) device under test (1) Enhanced Data Rates for GSM Evolution (1) extremely high frequency (2) excess noise ratio (1) error vector magnitude (1) film bulk acoustic resonator (22) frequency division multiple access (1) forward error correction (1) field effect transistor (1) frequency shift keying (1) first generation (1) second generation (1) third generation (1) fourth generation (1) gallium arsenide (1) gallium nitride (19) Gaussian minimum shift keying (4) General Packet Radio Service (28) Global System for Mobile Communications (1) heterojunction bipolar transistor (19) high definition TV (29) high electron mobility transistor (19) hot electron transistor (19) High-Speed Downlink Packet Access (1) high-speed downlink shared channel (30) integrated circuit (1) intermediate frequency (1) input IP3 (1) third-order intermodulation product (1) Industrial, Scientific, and Medical (frequency bands) (28) local area network (1) laterally defused MOSFET (19) low noise amplifier (1) local oscillator (1) load, reflection, and match model (14) low temperature cofired ceramic (17) minimum detectable signal (27) metal – semiconductor (19) metal – semiconductor field effect transistor (19) medium frequency (2) multiple input – multiple output (31) metal – oxide – semiconductor (19) metal – oxide – semiconductor field effect transistor (19) TERMINOLOGY MSO MSK NADC NMOS OFDM OFDMA OIM3 OIP3 OOK ORR3 PAE PAN PBX PCM PCS PDF PHEMT PLL PLO PMOS PN PRBS PSK PSTN QAM 16QAM 64QAM QPSK RFIC RSS S-parameter S11 S21 SAW S/N SHF SiC SiGe SMA SOC SOLT SONET SWR Mobile Switching Office (15) minimum shift keying (4) North American digital cellular (32) N doped semiconductor MOSFET (19) orthogonal frequency division multiplexing (1) orthogonal frequency division multiple access (1) output third-order intermodulation product (27) output IP3 (1) on – off keying (1) ratio of output power to OIM3 (27) power-added efficiency (28) Personal Area Network (31) Private Branch Exchange (15) pulse code modulation (1) Personal Communications System (1) probability density function (34) pseudomorphic high electron mobility transistor (19) phase locked loop (1) phase locked oscillator (1) P-doped semiconductor MOSFET (19) pseudorandom number (1) pseudorandom bit sequence (1); PN9, PN15, common PRBS signals phase shift keying (1) Public Switched Telephone Network (15) quadrature amplitude modulation (1) 16-quadrature amplitude modulation (1) 64-quadrature amplitude modulation (1) quadrature phase shift keying (1) RF integrated circuit (1) root sum of squares (13) scattering parameter (1) return loss insertion gain/loss surface acoustic wave (22) signal/noise ratio (1) superhigh frequency (2) silicon carbide (19) silicon germanium (1) subminiature version A (coaxial RF connectors) (8) system on a chip (1) short, open, load, and through (1) synchronous optical network (4) standing wave ratio (1) 493 494 TERMINOLOGY TDD TDMA TNC TOI TRL TRM TTI UHF UMTS UUT VCO VHF VNA VoIP VSA WCDMA WiMAX ZIF time division duplexing (28) time division multiple access (1) threaded Navy connector (12) third-order intercept (19) through, reflection, and load (14) through, reflection, and match (14) transmission time interval (30) ultrahigh frequency (2) Universal Mobile Telecommunications System (19) unit under test (1) voltage controlled oscillator (1) very high frequency (2) vector network analyzer (1) Voice over Internet Protocol (29) vector signal analyzer (1) Wideband Code Division Multiple Access (1) Wireless Interoperability for Microwave Access (29) zero IF (1) Units of Measure A mA bps kpbs Mbps dB dBc dBi dBm ft Hz kHz MHz GHz THz in m mm mm nm s ms ms ns amps milliamps bits per second kilobits per second megabits per second decibel (1) decibels below the carrier (17) or channel (32) decibels relative to isotropic (1) decibels relative to mW (1) foot/feet Hertz kilohertz megahertz gigahertz terahertz inch(es) meter millimeter micron (micrometer) (1) nanometer second millisecond microsecond nanosecond (1029) TERMINOLOGY ps W mW MW V V picosecond watt milliwatt megawatt ohm volt 495 INDEX 16QAM, see 16-quadrature amplitude modulation 16-quadrature amplitude modulation, 8, 115– 116, 434 1G, first generation, 2G, second generation, 3G, third generation, See also: Third Generation (3G) cellular phones 4G, fourth generation, 64QAM, see 64-quadrature amplitude modulation 64-quadrature amplitude modulation, 8, 115– 116, 434 mm Connector, see Amphenol mm precision connector ACP, see Adjacent channel power Adapter removal technique, 162 Adaptive differential PCM, 42–43, 406 Adjacent channel power, 48, 439 –444 Admittance, 103 –104 See also: Smith Chart ADPCM, see adaptive differential PCM AlN, see Aluminum nitride Aluminum nitride, 311–312 Amphenol mm precision connector, 201 Amplitude modulation, 113–114 Analog video signals, 399–400 Analog voice signals, 398–399 Anechoic room for antenna measurement, 299– 300, Antenna functions, 303 Antenna measurement setup, 300–301 Antenna types, 293–299 Half wave dipole, 293–295 Patch, 295–296 Collinear dipole array, 296– 298 Parabolic dish, 297–299 Patch antenna array, 297–299 Antenna: Gain, 289–292 Pattern, 291– 292 Polarization, 292, 295 Impedance match, 293 Antenna area, 293 Antennas, 289–302 APC-7, see Amphenol mm precision connector RF Measurements for Cellular Phones and Wireless Data Systems By A W Scott and R Frobenius Copyright # 2008 John Wiley & Sons, Inc 497 498 INDEX Aperture of antenna, see Antenna area ARQ, see Automatic repeat request Associated gain, of low noise transistor amplifier, 326– 327 Attenuator: Electronically variable, 236 Fixed, 161, 235 Mechanically variable, 235 PIN diode, 236 Audio signals, 398– 399 Automatic repeat request, 44, 407– 408 Backoff, of Power Amplifier, 441, 445 –446 Balanced mixer, 348– 349 Base transceiver station, 229 –232 Bayonet Navy connector, 201 BER, see Bit error rate BERT test setup: block diagram, 476 BERT display, 476 BERT, see Bit error rate tester Binary phase shift keying, 8, 116 Bipolar transistor, 268 –270 Bit error rate tester, 475 –477 Bit error rate, 116, 475– 477 Bit error rate, as a function of S/N, 116 –117 Bit rates for communication systems, 409– 410 Block diagram: Communication system, 227 –228 RF communication system, 227 –228 Base station, 230 –231 Bluetooth, 433 BNC, see Bayonet Navy connector Boltzman constant, 331 BPSK, see Binary phase shift keying BTS, see Base transceiver station Calibration Standards, de-embedding, 222 –223 Standards, SOLT in microstrip, 220– 222 Standards,TRL in microstrip, 222 Network Analyzer, 151 Carriage return, 403 Cascaded gain, noise figure and OIP3 formulas of overall receiver, 375 –385 CCD and complement design, 470 –472 CCDF, 51– 53, 465–475, CCDF, derivation of graphs, 469 CCDF, explanation of graphs, 466–469 CCDF, see Complementary cumulative distribution function CDMA, see Code division multiple access, Cdma2000 systems, 425–426 Cellular telephone, 1–3 Channelization of bandwidth, 413– 416 Chip capacitors, 102–103 CMOS, see N-doped and P-doped semiconductor MOSFET Coaxial connector, components that not have, 219–223 Code division multiple access, 44 –46, 418– 424 Collector, of transistor, 268–270 Comparison of vector diagram and CCDF, 467– 470 Complementary cumulative distribution function, 51 –53, 466–469 Complementary Cumulative Distribution Function, see CCDF Complete wireless communication system block diagram, 396–398 Compression of digital video signals, 406– 407 Compression of digital voice signals, 404– 406 Conductance, on Smith chart, 103–104 Connectors, transmission lines, 199–201 Constellation diagram 185, 447 Coupling, of directional coupler, 199, 211– 215 dB, 70 –72 dBm, 72–73 Decibels relative to mW, 78 Decibels, 78 Detector, Schottky diode, 133–135 Differential phase shift keying, 118–119 Digital data signals, 403–404 Digital modulation, types, 114–122 Digital modulation: Amplitude, 113–114 DPSK, 118– 119 Frequency, 120–122 Multilevel, 115–117 INDEX Phase, 113 –115 p/4QPSK, 119 QAM, 116 Digital speech interpolation 417– 418 Digitizing of analog signals, 400 –403 Dipole antenna, 293–295 Directional coupler, in network analyzer, 147 Directivity, of directional coupler, 212 –215 Double balanced mixer, 348– 349 DPSK, see Differential phase shift keying DSI, see Digital speech interpolation Duplexers, 301 –302 EDGE, see Enhanced Data Rates for GSM Evolution Efficiency, of amplifier, 272 EHF, see Extremely high frequency Electric field, 60– 61 Electromagnetic wave, characteristics of, Frequency, 64 Wavelength, 64–65 Impedance, 67 Power Density, 67 Phase, 68 –69 Electromagnetic waves, 62–63 Emitter, of bipolar transistor, 268 –270 Enhanced Data Rates for GSM Evolution, 54, 481–482 ENR, see Excess noise ratio Error correction, 407 Error vector magnitude, 51, 451 –454, 463 EVM, see Error vector magnitude Excess noise ratio, 197, 357 Extending overall receiver dynamic range, see Receiver Extremely high frequency, 65 –67 Eye diagram 187, 446 FBAR filter, see Film bulk acoustic resonator filter FDMA, see Frequency division multiple access FEC, see Forward error correction FET, see Field-effect transistor FET, see Field effect transistor Field effect transistor, 27, 265 –268 Field-effect transistor, 265 499 Film bulk acoustic resonator filter, 311–312 Filter characteristics common, 307– 308 Filter, baseband, 186, 439 Forward error correction, 408–409 Four band GSM, GPRS, EDGE, RFIC 389– 392 Free space path loss, 74–75 Frequency counters, 139–141 Frequency division duplexing (FDD), 302 Frequency division multiple access, 44, 413– 416 Frequency modulation, 120–122 Frequency shift keying, 120–122 Frequency, 64 FSK, see Frequency shift keying GaAs, see Gallium arsenide Gallium arsenide, 27, 264–265 Gallium nitride 264–265 GaN, see Gallium nitride Gate, of FET, 265 Gaussian minimum shift keying, 121– 122 General Packet Radio Service, 389–391 Global System for Mobile Communications, –2 GMSK, see Gaussian minimum shift keying GPRS, see General Packet Radio Service Group delay of filters, 314–315 GSM, see Global System for Mobile Communications HBT, see Heterojunction bipolar transistor HDTV, see High definition TV HEMT, see High electron mobility transistor Heterojunction bipolar transistor, 270– 271 High data rate systems for cell phones, 425– 428 High definition TV, 400 High electron mobility transistor, 270– 271 High-Speed Downlink Packet Access, 2, 426– 428 HSDPA, see High-Speed Downlink Packet Access, 500 INDEX IF, see Intermediate frequency Industrial, Scientific, and Medical (frequency bands), 431 Intermediate frequency, 36 –37, 345– 348 Intermodulation products See also: Third order intermodulation: Cause of, 328 –331 Check for instrumentation distortion, 371 Input IP3, 331 IP3, 331, 369 Maximum allowable input RF power, 331 Output IP3, 331 I-Q Diagram 186, 447 ISM, see Industrial, Scientific, and Medical (frequency bands) LAN, see Local area network Laterally defused MOSFET, 271 –272 LDMOS, 271 –272 LDMOS, see Laterally defused MOSFET LNA, see Low noise amplifier LO, see Local oscillator Load, reflection, and match model, 222 Local area network, 46 –47, 431 –435 Local oscillator, 36–37, 345 –349 Low noise amplifier, 35–36, 321 –344 Measurement using a VNA, 334 –344 Mismatching to reduce noise figure, 325– 327 Low temperature co-fired ceramic, 244 LRM, see Load, reflection, and match model LTCC, see Low temperature co-fired ceramic Magnetic field, 61– 62 Maximum allowable power of RF receiver, 377 Maxwell’s equations, 63 Measurement of EDGE signal distortion, 481– 482 Measurement of GSM Evolution components, 479 –489 Measurement of RF antennas, 299– 301 Measurement of WCDMA and HSDPA signal distortion, 482 –489 MESFET see Metal –semiconductor field effect transistor Metal –oxide–semiconductor, 266 Metal –oxide–semiconductor field effect transistor, 266 Metal –semiconductor field effect transistor, 266 Metal –semiconductor junction, 266 MIMO, see Multiple Input, Multiple Output Minimum detectable signal of RF receiver, 377 Minimum shift keying, 121–122 Mismatch problem, 79–80 Mismatches: definition of, 79 conversions, 82– 85 ways of specifying, 80–82 Mixer measurements, 353–355 Mixer: Graphical explanation of the generation of intermediate frequency, 345–348 Performance, 345–349 Removal of image noise, 350–351 Selection of individual voice channels, 349– 350 Types, 348–349 Mobile Switching Office, 230–232 Modulation distortion, caused by transistor nonlinearity, 272– 277 MOS, see metal– oxide–semiconductor MOSFET (19) MOSFET see Metal –oxide–semiconductor field effect transistor MSK, see Minimum shift keying MSO, see Mobile Switching Office Multipath fading, 75 –77 Multiple Input, Multiple Output, 433–435 Multiple input –multiple, 434–435 N doped semiconductor, 233 NADC, see North American Digital Cellular Noise figure: Principles, 321– 327 Explanation of, 322–323 of passive components, 323 cascaded, 324–325 “cold-source” measurement technique, 363 INDEX Noise parameter measurement, 364 Noise power density, 322 Noise: Diode, 193, 357 Mixer image, 350 –351, 359 North American Digital Cellular, 441 OFDM, see Orthogonal Frequency Division Multiplex OFDMA, see Orthogonal Frequency Division Multiple Access, OIM3, see Output IP3 OIP3, see Output IP3 On–off keying, 7, 113 –114 OOK, see On –off keying ORR3, see Ratio of output power to OIM3 Orthogonal Frequency Division Multiple Access, 46, 435 –436 Orthogonal Frequency Division Multiplex, 46–47, 433– 435 Output IP3, 38, 330 –332 See also: Intermodulation products, ThirdOrder intermodulation products Overall receiver performance as a function of part temperature, 383 –384 See also: Receiver P material, semiconductor, 234 Packet switching, 410 –411 PAN, see Personal Area Network Parabolic dish antenna, 297 Path loss equation, derivation of, 73– 78 PBX, see Private Branch Exchange PCM, see Pulse code modulation PDF, see Probability density function Personal Area Network, 432– 433 Phase, 68 –69 Phase locked loop, 24, 244, 246 Phase locked oscillator 22–24, 241– 254 Phase noise, 246 –248 Phase noise, measurement of, 250 –254 Phase shift keying, 7–8, 114– 120 Phase shift, of amplifier, 279, 282 –283 Phased-array antenna, 297– 299 Phase-locked oscillator, 22 –25, 241 –254 PHEMT, see Pseudomorphic high electron mobility transistor 501 PIN diode attenuator, 238–239 PIN diode attenuator, matched, 238– 240 PIN diode attenuator, reflective, 238 PIN diode switch, 236 PIN diode, 236– 237 PIN junction, 236–237 PLL, see Phase locked loop PLO, block diagram, 241–246 PLO, characteristics of, 248–249 PLO, see Phase locked oscillator PN junction, 235– 237 PN, see Pseudorandom number Polarization, of antenna, 292 Power amplifiers, 263–268 Example measurements, 284–287 Harmonic power measurements, 283– 284 Measurement of, 278 Measurements of power versus frequency and input power, 278– 283 Power density, 67 –68 Power meter, 131–138 Power scale, 69 –70 Power sensor, 133– 135 PRBS, see Pseudorandom bit sequence Private Branch Exchange, 232 Probability density function, 467 Pseudomorphic high electron mobility transistor, 271 Pseudorandom bit sequence, 44, 475 Pseudorandom number, 44, 421 PSK, see Phase shift keying PSTN, see Public Switched Telephone Network Public Switched Telephone Network, 232 Pulse code modulation, 42 –43 QAM, see quadrature amplitude modulation QPSK, see Quadrature phase shift keying Quadrature amplitude modulation, 8, 115– 116, 434 Quadrature phase shift keying, 8, 115–116 Ratio of output power to OIM3, 382 Reactance, on Smith chart, see Smith Chart: reactance 502 INDEX Receiver: Extending dynamic range, 384 –385 Overall performance, 375– 385 Performance as a function of part temperature, 383 –384 Typical performance, 376 –379 Reflected power, 69 –81 Reflection coefficient, 82 Reflection coefficient: on polar plot, 82– 85 Resonator, 243– 244, 308 –309 Return loss, 80 RF link budget, 73 –77 RF filter measurements, 313 –314, 318– 319 RF filter types: microstrip, 309 ceramic block, 309– 310 surface acoustic wave (SAW), 310 –311 film bulk acoustic wave (FBAR), 311– 312 base station, 312 –313 RF filters, 307 –320 RF filters: characteristics, 307 –308 design, 308–309 RF integrated circuit, 39, 387 –392 RF probe, 219 RF receiver block diagram 303 –305 RF semiconductors, 233 –236 RF transistors, 263 –264 RFIC, see RF integrated circuit Root sum of squares, 207 RSS, see Root sum of squares S parameter, 85 –87, 331– 334 Estimate of amplifier performance using, 333– 334 S/N see Signal/noise ratio SAW see Surface acoustic wave Scattering parameter, see S parameter Schottky diode, 133 –135 Schottky junction, 256 –257, 345 Semiconductor materials for RF transistors, 264– 265 Sensitivity of RF receiver, 377 SHF, see Super high frequency Short, open, load, and through, 147, 152, 220– 222 SiC, see Silicon carbide Siemens, as unit of admittance, 103 SiGe, see Silicon germanium Signal control components, 233–240 Signal/noise ratio, 193–197, 322 Signal-to-noise requirement, of communication system, 116–118 Silicon carbide, 264 Silicon germanium, 27, 294 SMA, see Subminiature version A (coaxial RF connectors) Smith chart Admittance plane, 103–104 Admittance plane, 105–106 Derivation of, 89–94 Impedance plane, 99– 103 Matching calculations with, 99– 110 Matching, 87 –88 Plotting mismatches on, 94–98 Reactance, 92 –95 Rotation around, 86–88 Susceptance, 103–104 Unity resistance circle, 94 –95 Smith chart software, 106–111 SOC, see System on a chip Software for calculating overall receiver performance, 379–383 SOLT, see Short, open, load, and through Source, of FET, 265 Spectrum analyzer, 14, 16– 17, 167– 181 Square log range, of detector, 131–134 Standing wave ratio, 84 –85 Subminiature version A (coaxial RF connectors), 201 Super high frequency, 65–67 Surface acoustic wave, 310–311 Susceptance, on Smith chart, see Smith Chart: susceptance Swap-equal adapters, 162 Switch, PIN, 236–240 SWR, 81 –82 SWR, see Standing wave ratio System on a chip, 39–41, 387 TDD, see Time division duplexing TDMA, see Time division multiple access Thermal noise, 321 Third Generation (3G) cellular phones, 424– 425 INDEX Third-order intermodulation product, 38, 367– 373 In LNA, 328 Threaded Navy connector, 201 Through, reflection, and load, 222 Through, reflection, and match, 222 Time division duplexing, 301 –302 Time division multiple access, 1, 44, 416– 418 TNC, see Threaded Navy connector TOI, see IP3 Transistor fabrication processes, 265 –272 MESFETS, 265 MOSFETS, 266 –268 Bipolar, 268 –270 HEMT, 270 –271 HBT, 270 –271 LDMOS, 271 –272 Transit time of electrons, 263 –264 Transmission time interval, 426 –427 TRL, see Through, reflection, and load TRM, see Through, reflection, and match TTI, see Transmission time interval UHF, see Ultrahigh frequency Ultrahigh frequency, 65– 67 Uncertainties: Mismatch, 204 –205 Noise figure measurement, 215 –216 Power meter, 205 –207 Ratioed measurements with VNA, 211– 215 RF Measurements, 203 –217 Spectrum analyzer, 210 –211 VNA measurement of absolute power, 207– 209 Unit under test, 475– 476 Unity resistance circle, see Smith Chart: unity resistance circle Up-converter, 255 –262 Generic procedure for measurement, 261– 262 Mathematical theory of operation, 257– 258 503 Measurement theory, 258– 261 Operation, 255– 257 UUT, see Unit under test Varactor diode, 245–246 Variable gain IF amplifier, 379–380 VCO, see Voltage controlled oscillator Vector network analyzer, 14, 143–165 Vector signal analyzer, 17, 183– 191 Very high frequency, 65 –67 VHF, see Very high frequency Video bandwidth filter, 173 Video signals, 399– 400 VNA, see Vector network analyzer Voice over Internet Protocol, 395 VoIP, see Voice over Internet Protocol Voltage controlled oscillator, 24, 242– 246 VSA, see Vector signal analyzer Ways of expressing mismatch, 80–81 WCDMA, see Wideband Code Division Multiple Access Wideband Code Division Multiple Access, 426– 428 WiMAX, see Wireless Interoperability for Microwave Access Wireless Interoperability for Microwave Access, 435–437 Wireless LAN RFIC, example of, 388– 389 Wireless LAN Specifications, 802.11, 431– 432 Wireless local area networks, 431–433 Wireless services, 232 Zero IF mixer, see ZIF mixer, Zero span, 443 ZIF mixer; 351 Advantages, 351 Description, (1), 351–353 Principles of operation, 351 Problems of DC offset, 352–353 Solutions to DC offset problem, 353 .. .RF MEASUREMENTS FOR CELLULAR PHONES AND WIRELESS DATA SYSTEMS ALLAN W SCOTT REX FROBENIUS RF MEASUREMENTS FOR CELLULAR PHONES AND WIRELESS DATA SYSTEMS RF MEASUREMENTS FOR CELLULAR PHONES AND. .. to be backward RF Measurements for Cellular Phones and Wireless Data Systems By A W Scott and R Frobenius Copyright # 2008 John Wiley & Sons, Inc INTRODUCTION compatible with the RF part of the... understanding of RF measurements by at least dB AL SCOTT REX FROBENIUS CHAPTER INTRODUCTION 1.1 THE MARKET FOR CELLULAR PHONES AND WIRELESS DATA TRANSMISSION EQUIPMENT The market for cellular phones