UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Pc Ic IB Tj TSTG -50 -50 -5 400 -150 -50 125 -65 ~ +150 V V V mW mA mA °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Base current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain(note) BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob NF Ic=-100µA,IE=0 Ic=-10mA,IB=0 IE=-10µA,Ic=0 VCB=-50V,IE=0 VEB=-5V,Ic=0 VCE=-6V,Ic=-2mA VCE=-6V,Ic=-150mA Ic=-100mA,IB=-10mA Ic=-100mA,IB=-10mA VCE=-10V,Ic=-1mA VCB=-10V,IE=0,f=1MHz Ic=-0.1mA,VCE=-6V RG=1kΩ,f=100Hz -50 -50 -5 Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance Noise Figure UTC TYP MAX -100 -100 400 70 25 -0.1 -0.3 -1.1 4.0 0.5 7.0 80 UNISONIC TECHNOLOGIES CO LTD UNIT V V V nA nA V V MHz pF dB QW-R201-004,A UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE1 RANK RANGE Y 120-240 G 200-400 TYPICAL CHARACTERISTIC CURVES Fig.1 Static characteristics Fig.2 DC current Gain IB=-300 µA -30 IB=-250 µA IB=-200 µA -20 IB=-150 µA -10 IB=-100 µA IB=-50 µA -8 -12 -16 10 -20 -1 -10 -10 -10 -10 -10 -1 -10 -10 -0.2 -0.4 -0.6 -0.8 -1.0 Ic,Collector current (mA) Base-Emitter voltage (V) Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance 10 10 Ic=10*IB VBE(sat) -1 -10 VCE(sat) -1 -10 10 VCE=-6V -10 Collector-Emitter voltage ( V) -10 -2 -10 VCE=-6V 10 -10 -10 -10 Ic,Collector current (mA) UTC -10 Cob,Capacitance (pF) -10 -4 Current Gain-bandwidth product,fT(MHz) -0 -10 Ic,Collector current (mA) -40 Saturation voltage (V) Fig.3 Base-Emitter on Voltage 10 HFE, DC current Gain Ic,Collector current (mA) -50 VCE=-6V 10 10 10 -1 -10 f=1MHz IE=0 10 10 -1 10 -1 -10 -10 -10 Ic,Collector current (mA) -10 -10 -10 -10 -10 Collector-Base voltage (V) UNISONIC TECHNOLOGIES CO LTD QW-R201-004,A