Rapid Thermal Oxidation (RTO) Levitor for: • Dry Oxidation (100% O2) • Diluted Oxidation (0-100% O2) • Anneal under Oxygen (0-100% O2) © 2010 Levitech Rapid Thermal Oxidation (RTO) 400 Large process window • time defines oxide thickness 700°C 800°C 350 900°C 950°C 1000°C 300 Today’s specifications: thickness = to 20 nm RTO anneal < 5min Oxide Thickness (A) 1050°C 1100°C 250 200 150 100 50 0 © 2010 Levitech 100 200 300 time (sec) 400 500 600 Rapid Thermal Oxidation (RTO) SPV = 9.9E09 at/cm3 TXRF < 1.01E10 at/cm2 MIR spectra 1000-70sec-02 (5nm) No contamination Native oxide ref Levitor 800°C Levitor 900°C Levitor 1000°C Excellent uniformity And… • Low etch rate 26A/Min* (* on a nm thick layer) • Excellent WtW repeatability • Low charge density • Large process window © 2010 Levitech