V I V br Fig.6.15: Reverse I-V characteristics of a pn junction. From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002) http://Materials.Usask.Ca Figure 1.31 AC circuit analysis: (a) circuit with combined dc and sinusoidal input voltages, (b) sinusoidal diode current superimposed on the quiescent current, (c) sinusoidal diode voltage superimposed on the quiescent value, and (d) forward-biased diode I-V characteristics with a sinusoidal current and voltage superimposed on the quiescent values Figure 1.25 The diode and load line characteristics for the circuit shown in Figure 1.24 3.ẹieọn trụỷ noỏi pn I D a.ẹieọn trụỷ túnh I D Q 0 V D V b.ẹieọn trụỷ ủoọng: D D D Q V R I D D d D D Q Q V d V r I d I Current Voltage 0 I 0.5 V dV r d 1 dI dV = dI I + dI V + dV Tangent From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002) http://Materials.Usask.Ca Fig. 6.14: The dynamic resistance of the diode is defined as dV/dI which is the inverse of the tangent at I. . V I V br Fig.6.1 5: Reverse I-V characteristics of a pn junction. From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002) http://Materials.Usask.Ca Figure. characteristics for the circuit shown in Figure 1.24 3.ẹieọn trụỷ noỏi pn I D a.ẹieọn trụỷ túnh I D Q 0 V D V b.ẹieọn trụỷ ủoọng: D D D Q V R I D D d D D Q Q V d V r I d I Current Voltage 0. Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002) http://Materials.Usask.Ca Fig. 6.1 4: The dynamic resistance of the diode is defined as dV/dI which is the inverse of