Advances in Photodiodes Part 1 pdf

ADVANCES IN PHOTODIODES Edited by Gian-Franco Dalla Be a Advances in Photodiodes Edited by Gian-Franco Dalla Betta Published by InTech Janeza Trdine 9, 51000 Rijeka, Croatia Copyright © 2011 InTech All chapters are Open Access articles distributed under the Creative Commons Non Commercial Share Alike Attribution 3.0 license, which permits to copy, distribute, transmit, and adapt the work in any medium, so long as the original work is properly cited. After this work has been published by InTech, authors have the right to republish it, in whole or part, in any publication of which they are the author, and to make other personal use of the work. Any republication, referencing or personal use of the work must explicitly identify the original source. Statements and opinions expressed in the chapters are these of the individual contributors and not necessarily those of the editors or publisher. No responsibility is accepted for the accuracy of information contained in the published articles. The publisher assumes no responsibility for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained in the book. Publishing Process Manager Katarina Lovrecic Technical Editor Teodora Smiljanic Cover Designer Martina Sirotic Image Copyright Heintje Joseph T. Lee, 2010. Used under license from Shutterstock.com First published March, 2011 Printed in India A free online edition of this book is available at www.intechopen.com Additional hard copies can be obtained from orders@intechweb.org Advances in Photodiodes, Edited by Gian-Franco Dalla Betta p. cm. ISBN 978-953-307-163-3 free online editions of InTech Books and Journals can be found at www.intechopen.com Part 1 Chapter 1 Chapter 2 Chapter 3 Chapter 4 Chapter 5 Part 2 Chapter 6 Chapter 7 Preface IX Theoretical Aspects and Simulations 1 Spectral Properties of Semiconductor Photodiodes 3 Terubumi Saito Noise in Electronic and Photonic Devices 25 K. K. Ghosh Design of Thin-Film Lateral SOI PIN Photodiodes with up to Tens of GHz Bandwidth 43 Aryan Afzalian and Denis Flandre Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In 0.53 Ga 0.47 As Absorbers for Optical Communications 69 P Susthitha Menon, Abang Annuar Ehsan and Sahbudin Shaari Simulation of Small-pitch High-density Photovoltaic Infrared Focal Plane Arrays 95 Mikhail Nikitin, Albina Drugova, Viacheslav Kholodnov and Galina Chekanova Silicon Devices 121 Methodology for Design, Measurements and Characterization of Optical Devices on Integrated Circuits 123 G. Castillo-Cabrera, J. García-Lamont and M. A. Reyes-Barranca Performance Improvement of CMOS APS Pixels using Photodiode Peripheral Utilization Method 143 Suat U. Ay Contents Contents VI Color-Selective CMOS Photodiodes Based on Junction Structures and Process Recipes 159 Oscal T C. Chen and Wei-Jean Liu Extrinsic Evolution of the Stacked Gradient Poly-Homojunction Photodiode Genre 181 Paul V. Jansz and Steven Hinckley Silicon Photodiodes for Low Penetration Depth Beams such as DUV/VUV/EUV Light and Low-Energy Electrons 205 Lis K. Nanver Avalanche Photodiodes in Submicron CMOS Technologies for High-Sensitivity Imaging 225 Gian-Franco Dalla Betta, Lucio Pancheri, David Stoppa, Robert Henderson and Justin Richardson The Use of Avalanche Photodiodes in High Energy Electromagnetic Calorimetry 249 Paola La Rocca and Francesco Riggi Low-Energy Photon Detection with PWO-II Scintillators and Avalanche Photodiodes in Application to High-Energy Gamma-Ray Calorimetry 275 Dmytro Melnychuk and Boguslaw Zwieglinski Emerging Technologies 289 High-Power RF Uni-Traveling-Carrier Photodiodes (UTC-PDs) and Their Applications 291 Tadao Nagatsuma and Hiroshi Ito n-Type β-FeSi 2 /p-type Si Near-infrared Photodiodes Prepared by Facing-targets Direct-current Sputtering 315 Mahmoud Shaban and Tsuyoshi Yoshitake GaN-based Photodiodes on Silicon Substrates 331 L.S. Chuah and Z. Hassan Gas Source MBE Grown Wavelength Extending InGaAs Photodetectors 349 Yong-gang Zhang and Yi Gu Use of a-SiC:H Photodiodes in Optical Communications Applications 377 P. Louro, M. Vieira, M. A. Vieira, M. Fernandes and J. Costa Chapter 8 Chapter 9 Chapter 10 Chapter 11 Chapter 12 Chapter 13 Part 3 Chapter 14 Chapter 15 Chapter 16 Chapter 17 Chapter 18 Contents VII Three Transducers Embedded into One Single SiC Photodetector: LSP Direct Image Sensor, Optical Amplifier and Demux Device 403 M. Vieira, P. Louro, M. Fernandes, M. A. Vieira, A. Fantoni and J. Costa InAs Infrared Photodiodes 427 Volodymyr Tetyorkin, Andriy Sukach and Andriy Tkachuk The InAs Electron Avalanche Photodiode 447 Andrew R. J. Marshall Chapter 19 Chapter 20 Chapter 21 Pref ac e Photodiodes are the simplest but most versatile semiconductor optoelectronic de- vices. They can be used for direct detection of light in the ultraviolet, visible and infrared spectral regions, and of so X rays and charged particles. When coupled with scintillators or other converting materials, they are also suitable for the detec- tion of gamma rays and neutrons. Owing to some interesting features they can off er such as small size, ruggedness, stability, linearity, speed, low noise, etc., they are appealing to a large variety of applications, spanning from vision systems to optical interconnects, from optical storage systems to photometry and particle physics to medical imaging, etc. The book Advances in Photodiodes addresses the state-of-the-art, latest developments and new trends in the fi eld, covering theoretical aspects, design and simulation issues, processing techniques, experimental results, and applications. The book is divided into three parts. Part 1 includes fi ve chapters dealing with theoretical aspects, device modeling and simulations. Basic concepts, advanced models useful to describe the device opera- tion and to predict the performance, and novel design methodologies are compre- hensively reviewed. Part 2 collects eight chapters describing recent developments in silicon photodiodes, including both CMOS-compatible and full custom devices. Design and processing issues aimed at enhancing CMOS active pixel performance for special imaging applications are reported; a new technology for very shallow junction photodiodes and use of avalanche photodiodes in calorimetry applications are also reviewed. Part 3 includes nine chapters relevant to new developments in- volving technologies based on materials other than silicon (e.g., GaN, InAs, InGaAs, SiC, etc.), aimed at improved performance and extended wavelength detectivity into the ultraviolet, infrared, terahertz, and millimetric waves spectral regions. Wri en by internationally renowned experts from 17 countries, with contributions from universities, research institutes and industries, the book Advances in Photo- diodes is a valuable reference tool for students, scientists, engineers, and researchers working in such diff erent fi elds as optoelectronic devices, electronic engineering, telecommunications, particle physics and medical imaging, to cite but a few. X Preface I would like to thank all the authors for presenting their work in this book. I am also grateful to the editorial staff and the reviewers for their eff orts to ensure both high quality of the book and keeping up with tight schedule for the publication. I am sure the readers will appreciate this book and fi nd it useful. Prof. Gian-Franco Dalla Be a University of Trento, Italy [...]... (m =1, 2) are Fresnel’s coefficients defined for s- and p-polarization as rm ,s = nm − 1 cos φm − 1 − nm cos φm , nm − 1 cos φm − 1 + nm cos φ (3 .10 ) rm , p = nm cos φm − 1 − nm − 1 cos φm , nm cos φm − 1 + nm − 1 cos φ (3 .11 ) tm , s = 2 nm − 1 cos φm − 1 , nm − 1 cos φm − 1 + nm cos φ (3 .12 ) tm , p = 2nm − 1 cos φm − 1 , nm cos φm − 1 + nm − 1 cos φ (3 .13 ) Refraction angles are given by the following... film ( n1 = n1 − ik1 ) with thickness, d, on the slab When the angle of incidence on the photodiode is φ0, transmittance, T, reflectance, R, and absorptance, A, of the film are given by the following equations: T = ct *t , (3.4) R = r *r , (3.5) A = 1 − R −T, (3.6) t= t1t2 exp( −iδ 1 / 2) , 1 + r1r2 exp( −iδ 1 ) (3.7) r= r1 + r2 exp( −iδ 1 ) , 1 + r1r2 exp( −iδ 1 ) (3.8) δ 1 = 4π n1d1 cos φ 1 /λ , (3.9)... the load resistance is 5 Ω in this example, the operating point is marked by point, p and the operating line is shown by the red dotted line, which exhibits non-linear response to the input radiant power If the load resistance is changed to 0.5 Ω, the operating point and operating line become to point, q, and the purple dashed line, respectively, which results in relatively linear response below the... that external quantum efficiency is related to internal quantum efficiency by Eq (2.4) To distinguish intrinsic and extrinsic property of internal quantum efficiency, we modify Eq (2.4) by introducing carrier collection efficiency, C, and intrinsic internal spectral quantum efficiency, η'int, as follows ηext= CTη'int (3 .1) As we will see in the following sections, C and T can be calculated as a function... properties of photodiodes 2 Basis on photodiodes Fundamental information about photodiodes on the structure, principle, characteristics etc can be found, for instance, in (Sze, S.M., 19 81) 2 .1 Terms & units Definitions of technical terms and quantities used in this paper basically follow the CIE vocabularies (CIE, 19 87) Photodetectors are devices to measure so-called intensity of the incident radiation... Calculation results for a p-on-n silicon photodiode are shown in Fig 5 Parameters used are as follows; xj=200 nm, Ln= 20 μm, Dn=2.6 cm2/s, W=9.6 μm, Lp =15 0 μm, Dp =12 cm2/s, Sp =10 5 cm/s, and H'=300 μm S f =5x104 [cm/s] 0.8 0.6 C Cf Cdr Cb 0.4 0.2 0 10 10 0 Wavelength /nm 10 00 (b) 1 a=4 a=5 a=6 a=7 0 .1 S f =10 a [cm/s] 0. 01 10 10 0 Wavelength /nm 10 00 Fig 5 Calculated carrier collection efficiency spectra... of intrinsic internal spectral responsivity, s’int, and quantum efficiency, η’int expressed in all possible combinations as a function of wavelength, λ, and photon energy, E (a): s’int(λ ), (b): s’int(E), (c): η’int (λ), and (d): η’int (E) 3.3 Optical losses The optical losses are classified, as illustrated in Fig 2, into the loss of photons due to reflection from the surface, due to absorption in. .. Part 1 Theoretical Aspects and Simulations 1 Spectral Properties of Semiconductor Photodiodes Terubumi Saito National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology 1- 1 -1, Umezono, Tsukuba-shi, Ibaraki 305-8563, Japan 1 Introduction Needs for quantitative optical measurements are expanding in various applications where measurement... corresponding to the two definitions for the input One is the case when the input radiation is defined by the one incident to the detector and the other is the case when the input radiation is defined by the one absorbed in the detector To distinguish the two cases, term, external (sometimes omitted) and internal is further added in front of each term for the former and the latter, respectively For instance,... creation energy 1/ ε Internal spectral responsivity /(A/W) ⎧ 1 (E ≤ ε ) ⎩E / ε ( E ≥ ε ) Internal spectral responsivity /(A/W) ′ ηint = ⎨ (b) ε /eV: Pair creation energy 1/ ε ε 12 40/ε Photon energy/eV Wavelength /nm 5 4 3 (c) ε /eV: Pair creation energy 3 2 1 0 12 40/ε Wavelength /nm Internal spectral quantum efficiency Internal spectral quantum efficiency 6 2.5 2 (d) ε /eV: Pair creation energy 1. 5 1 0.5 0 ε . Costa Chapter 8 Chapter 9 Chapter 10 Chapter 11 Chapter 12 Chapter 13 Part 3 Chapter 14 Chapter 15 Chapter 16 Chapter 17 Chapter 18 Contents VII Three Transducers Embedded into One Single SiC Photodetector:. published March, 2 011 Printed in India A free online edition of this book is available at www.intechopen.com Additional hard copies can be obtained from orders@intechweb.org Advances in Photodiodes, . ADVANCES IN PHOTODIODES Edited by Gian-Franco Dalla Be a Advances in Photodiodes Edited by Gian-Franco Dalla Betta Published by InTech Janeza Trdine 9, 510 00 Rijeka, Croatia Copyright © 2 011