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PHOTODIODES - WORLD ACTIVITIES IN 2011 Edited by Jeong-Woo Park Photodiodes - World Activities in 2011 Edited by Jeong-Woo Park Published by InTech Janeza Trdine 9, 51000 Rijeka, Croatia Copyright © 2011 InTech All chapters are Open Access articles distributed under the Creative Commons Non Commercial Share Alike Attribution 3.0 license, which permits to copy, distribute, transmit, and adapt the work in any medium, so long as the original work is properly cited. After this work has been published by InTech, authors have the right to republish it, in whole or part, in any publication of which they are the author, and to make other personal use of the work. Any republication, referencing or personal use of the work must explicitly identify the original source. Statements and opinions expressed in the chapters are these of the individual contributors and not necessarily those of the editors or publisher. No responsibility is accepted for the accuracy of information contained in the published articles. The publisher assumes no responsibility for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained in the book. Publishing Process Manager Petra Zobic Technical Editor Teodora Smiljanic Cover Designer Jan Hyrat Image Copyright Shebeko, 2010. Used under license from Shutterstock.com First published July, 2011 Printed in Croatia A free online edition of this book is available at www.intechopen.com Additional hard copies can be obtained from orders@intechweb.org Photodiodes - World Activities in 2011, Edited by Jeong-Woo Park p. cm. ISBN 978-953-307-530-3 free online editions of InTech Books and Journals can be found at www.intechopen.com Contents Preface IX Part 1 Generals of Photodetection 1 Chapter 1 An Absolute Radiometer Based on InP Photodiodes 3 Ana Luz Muñoz Zurita, Joaquin Campos Acosta and Alicia Pons Aglio Chapter 2 Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures 23 A.V. Karimov, D.M. Yodgorova and O.A. Abdulkhaev Chapter 3 Photon Emitting, Absorption and Reconstruction of Photons 37 Changjun Liao, Zhengjun Wei and Jindong Wang Part 2 CMOS Related Topics 63 Chapter 4 CMOS Photodetectors 65 Albert H. Titus, Maurice C-K. Cheung and Vamsy P. Chodavarapu Chapter 5 Image Artifacts by Charge Pocket in Floating Diffusion Region on CMOS Image Sensors 101 Sang-Gi Lee, Jong-Min Kim, Sang-Hoon Bae, Jin-Won Park and Yoon-Jong Lee Chapter 6 Active Pixel Sensor CMOS Operating Multi - Sampled in Time Domain 121 Fernando De Souza Campos Chapter 7 Bandwidth Extension for Transimpedance Amplifiers 139 Omidreza Ghasemi VI Contents Part 3 APD and Single Photon Detection 157 Chapter 8 Avalanche Photodiodes in High-Speed Receiver Systems 159 Daniel S. G. Ong and James E. Green Chapter 9 Silicon Photo Multipliers Detectors Operating in Geiger Regime: an Unlimited Device for Future Applications 183 Giancarlo Barbarino, Riccardo de Asmundis, Gianfranca De Rosa, Carlos Maximiliano Mollo, Stefano Russo and Daniele Vivolo Chapter 10 Near-Infrared Single-Photon Detection 227 Guang Wu, E Wu, Xiuliang Chen, Haifeng Pan and Heping Zeng Chapter 11 Geiger Avalanche Photodiodes (G-APDs) and Their Characterization 247 Giovanni Bonanno, Massimiliano Belluso, Sergio Billotta, Paolo Finocchiaro and Alfio Pappalardo Chapter 12 Design of High Quantum Efficiency and High Resolution, Si/SiGe Avalanche Photodiode Focal Plane Arrays Using Novel, Back-Illuminated, Silicon-on-Sapphire Substrates 267 Alvin G. Stern Part 4 Extended Topics of Photodiodes 313 Chapter 13 Single Crystal Diamond Schottky Photodiode 315 Claudio Verona Chapter 14 GaN Based Ultraviolet Photodetectors 333 D. G. Zhao and D. S. Jiang Chapter 15 Quantum Dot Composite Radiation Detectors 353 Mario Urdaneta, Pavel Stepanov, Irving Weinberg, Irina Pala and Stephanie Brock Chapter 16 HgCdTe Heterostructures Grown by MBE on Si(310) for Infrared Photodetectors 367 Maxim Yakushev, Vasily. Varavin, Vladimir Vasilyev, Sergey Dvoretsky, Irina Sabinina,Yuri. Sidorov, Aleksandr Sorochkin and Aleksandr Aseev Preface Photodiodes or photodetectors are prevailing technology in various fields giving many benefits to human race. Moreover, their application fields are extended in the world more and more. From photo camera application to medical application, they are pervading in the human life. They became an inevitable and valuable technology since its birth. Now we cannot imagine what is like our life without them. They would exist until end of human race even if we don’t need our sight of today anymore. Even though we become a new race after gradual evolution, we would need suitable photodiodes and photodetectors. They are in one boat with our human race. Many people in the world pursuit a birth of new photodiodes or photodetectors technology which are able to give better life to human. Their efforts are contained in this book. This book would be valuable to those who want to obtain knowledge and inspiration in the related area. Jeong-Woo Park Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yusong-gu, Daejeon, Republic of Korea [...]... mm 13 14 Photodiodes - World Activities in 2 011 0.36 Reflectance 0.34 0.32 0.30 0.28 0.26 800 10 00 12 00 14 00 16 00 Wavelenght (nm) Fig 6 Detector with a rectangular aperture of 8 x 8mm 0.25 Reflectance 0.20 0 .15 0 .10 0.05 0.00 800 10 00 12 00 14 00 16 00 Wavelenght (nm) Fig 7 Spectrum of reflectance for photodiodes 1 and 4 15 An Absolute Radiometer Based on InP Photodiodes 0 .18 0 .16 Reflectance 0 .14 0 .12 ... 0 .12 0 .10 0.08 0.06 800 10 00 12 00 14 00 16 00 Wavelenght (nm) 8 1 0 e 4 1 0 t c n a 2 1 0 e c R l f e 6 1 0 1 0 8 0 6 0 8 0 0 2 1 0 0 4 1 W a v 0 1 e n l t h g m n ) ( 0 1 0 6 0 Fig 8 Spectrum of reflectance of photodiodes 2 and 5 0.35 0.30 Reflectance 0.25 0.20 0 .15 0 .10 0.05 0.00 800 10 00 12 00 14 00 Wavelenght (nm) Fig 9 Spectrum of reflectance of photodiodes 1- 6 16 00 16 Photodiodes - World Activities. .. NSi InP (Zn) InGaAs HAM 16 2 .17 nm 12 03.35nm 15 93.2nm GPD 15 9.99nm 12 00.54nm 15 36.7nm Table 1 The thickness values obtained of InP photodiodes 7.3 Internal quantum efficiency Internal quantum efficiency, e(l), is calculated as usual: e(l) = Q(l) / (1- r(l)) Values obtained are shown in figure 13 and 14 for photodiodes HAM and GPD 1, 0 Internal quantum eficiency 0,9 0,8 0,7 0,6 J L 0,5 0,4 0,3 0,2 0,80 1, 00... obtained are shown in figure 13 , except for photodiode POL that gave a poorer result The thickness values obtained from the fit are shown in the table An Absolute Radiometer Based on InP Photodiodes Fig 11 Possible Structure of InP photodiode Spectral Reflectance measured and fitted values for photodiodes HAM and GPD Fig 12 Materials’ Refraction Index 17 18 Photodiodes - World Activities in 2 011 Photodiode... 9) realized monitoring temporal fluctuations of light power A bottom part (see mirrors 8, 11 ; InGaAs/InP-photodiode 10 , and and germanium photodiode 12 ) formed an image of the monochromator’s exit slit on 12 Photodiodes - World Activities in 2 011 the sensitive surfaces of photodiodes The angle of incidence was equal to 7.4 grades which was accepted as the normal incidence in this train of measurements... polarized lights in the case of the polarized lights the angle of incidence is smaller 10 angular degrees and is possible observed it doesn’t have changes in the behavior of the reflectance An Absolute Radiometer Based on InP Photodiodes 0.25 Reflectance 0.20 0 .15 0 .10 0.05 0.00 800 10 00 12 00 14 00 16 00 Wavelenght (nm) (a) 0 .18 Reflectance 0 .16 0 .14 0 .12 0 .10 0.08 0.06 800 10 00 12 00 14 00 16 00 Wavelenght... 0,3 0,2 0,80 1, 00 1, 20 1, 40 1, 60 Wavelength (μm) Fig 13 Internal quantum efficiency of photodiodes HAM experimental values (dots) and fitted values according to the model shown below 19 An Absolute Radiometer Based on InP Photodiodes 1, 1 Internal quantum eficiency 1, 0 0,9 0,8 0,7 I K 0,6 0,5 0,4 0,3 0,2 0,80 1, 00 1, 20 1, 40 1, 60 Wavelength (μm) Fig 14 Internal quantum efficiency of photodiodes GPD experimental... of a structure often used to obtain the low capacitance desirable for high-speed operation A cross -sectional view of a front-illuminated planar structure InGaAs/InP – PIN photodiode is show in the figure 3 Fig 3 Schematic cross section of a planar structure InP Photodiode 10 Photodiodes - World Activities in 2 011 In the case of InP Photodiodes we need to check something important parameters for example:... Table 2 Parameters obtained by photodiode T’ 2 .19 1. 65 D’ 2 .19 1. 62 D 11 .96 43 51. 16 Pb 0.844 0.960 20 Photodiodes - World Activities in 2 011 8 Conclusions The reflectance was measured with linearly polarized and non-polarized lights, and these pair of measurements gives quite similar results In fact, the difference was equal to approximately 2% The same results are depicted for the photodiodes 2 and 5,... volts The InP window layer is transparent to 1. 3μm – 1. 55μm wavelengths, thus InGaAs/InP photodiodes do not have slow tail impulse response associated with the slow diffusion component from the contact layer 8 Photodiodes - World Activities in 2 011 4 Basic photodiode operation Photodiodes operate under reverse vias to create a depleted region in which photogenerated electron-hole pairs In the figure . PHOTODIODES - WORLD ACTIVITIES IN 2 011 Edited by Jeong-Woo Park Photodiodes - World Activities in 2 011 Edited by Jeong-Woo Park Published by InTech. Schematic cross section of a planar structure InP Photodiode. Photodiodes - World Activities in 2 011 10 In the case of InP Photodiodes we need to check something important parameters for example:. the material itself. 4 .1 Basic InP PIN photodiodes In making a simple planar structure the photodiode a double heterostructure consisting of InGaAs/InP with a inP capping layer is grown, and