FERROELECTRICS‐ APPLICATIONS Editedby MickaëlLallart Ferroelectrics - Applications Edited by Mickaël Lallart Published by InTech Janeza Trdine 9, 51000 Rijeka, Croatia Copyright © 2011 InTech All chapters are Open Access articles distributed under the Creative Commons Non Commercial Share Alike Attribution 3.0 license, which permits to copy, distribute, transmit, and adapt the work in any medium, so long as the original work is properly cited. After this work has been published by InTech, authors have the right to republish it, in whole or part, in any publication of which they are the author, and to make other personal use of the work. Any republication, referencing or personal use of the work must explicitly identify the original source. Statements and opinions expressed in the chapters are these of the individual contributors and not necessarily those of the editors or publisher. No responsibility is accepted for the accuracy of information contained in the published articles. The publisher assumes no responsibility for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained in the book. Publishing Process Manager Silvia Vlase Technical Editor Teodora Smiljanic Cover Designer Jan Hyrat Image Copyright Noel Powell, Schaumburg, 2010. Used under license from Shutterstock.com First published June, 2011 Printed in Croatia A free online edition of this book is available at www.intechopen.com Additional hard copies can be obtained from orders@intechweb.org Ferroelectrics - Applications, Edited by Mickaël Lallart p. cm. ISBN 978-953-307-456-6 free online editions of InTech Books and Journals can be found at www.intechopen.com Contents Preface IX Part 1 Sensors and Actuators 1 Chapter 1 Giant k 31 Relaxor Single-Crystal Plate and Their Applications 3 Toshio Ogawa Chapter 2 MEMS Based on Thin Ferroelectric Layers 35 Igor L. Baginsky and Edward G. Kostsov Chapter 3 Periodically Poled Acoustic Wave-Guide and Transducers for Radio-Frequency Applications 59 Sylvain Ballandras, Emilie Courjon, Florent Bassignot, Gwenn Ulliac, Jérôme Hauden, Julien Garcia, Thierry Laroche and William Daniau Chapter 4 Ferroelectric Polymer for Bio-Sonar Replica 75 Antonino S. Fiorillo and Salvatore A. Pullano Chapter 5 Ferroelectric Materials for Small-Scale Energy Harvesting Devices and Green Energy Products 95 Mickaël Lallart and Daniel Guyomar Part 2 Memories 115 Chapter 6 Future Memory Technology and Ferroelectric Memory as an Ultimate Memory Solution 117 Kinam Kim and Dong Jin Jung Chapter 7 Ultrahigh Density Probe-based Storage Using Ferroelectric Thin Films 157 Noureddine Tayebi and Yuegang Zhang VI Contents Chapter 8 Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film 179 Chien-Min Cheng, Kai-Huang Chen, Chun-Cheng Lin, Ying-Chung Chen, Chih-Sheng Chen and Ping-Kuan Chang Chapter 9 Ferroelectric Copolymer-Based Plastic Memory Transistos 195 Sung-Min Yoon, Shinhyuk Yang, Soon-Won Jung, Sang-Hee Ko Park, Chun-Won Byun, Min-Ki Ryu, Himchan Oh, Chi-Sun Hwang, Kyoung-Ik Cho and Byoung-Gon Yu Chapter 10 Use of FRAM Memories in Spacecrafts 213 Claudio Sansoè and Maurizio Tranchero Chapter 11 Adaptive Boolean Logic Using Ferroelectrics Capacitors as Basic Units of Artificial Neurons 231 Alan P. O. da Silva, Cicília R. M. Leite, Ana M. G. Guerreiro, Carlos A. Paz de Araujo and Larry McMillan Preface Ferroelectricityhasbeen one ofthe most used and studiedphenomenain both scien‐ tificandindustrialcommunities.Propertiesofferroelectricsmaterialsmakethempar‐ ticularlysuitableforawiderangeofapplications,rangingfromsensorsandactuators to optical or memory devices. Since the discovery of ferroelectricity in Rochelle Salt (whichus edtobeusedsince1665)in1921byJ.Valasek,numerousapplicationsusing suchaneffecthavebeendeveloped.Firstemployedinlargemajorityinsonarsinthe middleofthe20 th century,ferroelectricmaterialshavebeenabletobeadaptedtomore andmoresystemsinourdailylife(ultrasoundorthermalimaging,accelerometers,gy‐ roscopes,filters…),andpromisingbreakthroughapplicationsare still underdevelop‐ ment (non‐volatile memory, optical devices…), making ferroelectrics one of tomor‐ row’smostimportantmaterials. Thepurposeofthiscol lectionistopresentanup‐to‐dateviewofferroelectricityandits applications,andisdividedintofourbooks: Material Aspects, describing ways to select and process materials to make themferroelectric. PhysicalEffects,aimingatexplainingtheunderlyingmechanismsinferroelec ‐ tricmaterialsandeffect sthatarisefromtheirparticularproperties. Characterization and Modeling, giving an overview of how to quantify the mechanisms of ferroelectric materials (both in microscopic and macroscopic approaches)andtopredicttheirperformance. Applications,showingbreakthroughuseofferroelectrics. Authorsofeachchapterhavebeenselectedaccordingtotheirscientif icworkandtheir contributionstothecommunity,ensuringhigh‐qualitycontents. The present volume focuses on the applications of ferroelectric materials, describing innovativesystemsthatuseferroelectricity.Thecurrentuseofsuchdevicesassensors and actuators, in the field of acoustics, MEMS, micromotors and energy harvesting will be presented in chapters 1 to 5. The next sectionproposes a particular emphasis X Preface onthe application of ferroelectricmaterials astransistors and memory devices(chap‐ ters6to11),showingoneofthefuturebreakthroughusesofthesematerials. Isincerelyhopeyouwillfindthisbookasenjoyabletoreadasitwastoedit,andthat itwillhelpyourresearchand/ orgi venewideasinthewidefieldofferroelectricmate‐ rials. Finally,I wouldliketotaketheopportunityofwritingthisprefacetothankalltheau‐ thors for theirhigh qualitycontributions,as well as the InTechpublishing team (and especiallythepublishingprocessmanagerMs.SilviaVlase)fortheiroutstandingsu p‐ port. June2011 Dr.MickaëlLallart INSALyon,Villeurbanne, France [...]... Applications 10 000 10 0 80 64 h aging 6000 60 16 h aging 4000 40 2000 20 (10 0):εr (■)/ k 31 (□) (11 0):εr (●)/ k 31 (○) 0 0 500 k 31 (%) ε r (-) 8000 10 00 E (V /m m ) 15 00 0 2000 Fig 8 DC poling field dependence of εr and k 31 in (10 0) and (11 0) PMNT single-crystal plates k 31 ( %) The effects of poling temperature on k 31, d 31 constant and the frequency constant (half of the bulk wave velocity) of the k 31 mode (fc 31) ... E≧200 V/mm In addition, the giant k 31 and d 31 constant were accompanied by the lowest fc 31, nearly 700 Hz·m These results were the same as those of (10 0) PZNT 91/ 09 single-crystal plates with giant k 31 100 90 80 70 60 50 40 30 20 10 0 0 200 400 600 800 10 00 E ( /m m ) V 14 00 12 00 -d 31 ( /N) pC 10 00 800 600 400 200 0 0 200 400 600 800 10 00 800 10 00 E ( /m m ) V 10 00 f 31 ( m ) c Hz・ 900 800 700 600 0 200... observed in (11 0) PZNT 91/ 09 single-crystal plates poled in the [11 0] direction On the other hand, the εr (●) and k 31 (○) in (11 0) PMNT increased abruptly at E=200 V/mm and reached constant values without aging It was found that a giant k 31 of over 86% was obtained at E≧200 V/mm in (11 0) PMNT single-crystal plates at the poling temperature of 40 ºC 11 Giant k 31 Relaxor Single-Crystal Plate and Their Applications. .. single-crystal plates to obtain giant k 31 3 .1. 1 Realization of giant k 31 in PMNT plates Figure 8 shows the DC poling field (E) dependence of relative dielectric constant (εr) and k 31 in (10 0) PMNT68/32 and (11 0) PMNT74/26 single-crystal plates The εr (■) in (10 0) PMNT has a peak at E=300 V/mm and decreases with increasing E There is aging in εr (■) and k 31 (□) for (10 0) PMNT, after 16 and 64 h at room temperature... poling field vs d33 and d 31 shown in Fig 3 While the giant k 31 of over 80% was obtained at 10 00 V/mm≦E . (and especiallythepublishingprocessmanagerMs.SilviaVlase)fortheiroutstandingsu p‐ port. June2 011 Dr.MickaëlLallart INSALyon,Villeurbanne, France Part 1 Sensors and Actuators 1 Giant k 31 Relaxor Single-Crystal Plate and Their Applications. k 31 and d 31 can be obtained. 2 .1. 2 Where does “giant k 31 piezoelectricity” come from? Figures 2(a) and 2(b) show the temperature dependences of k 31 , k 33 and elastic compliance (s 11 E ) Hz·m at 10 00 V/mm≦E< ;15 00 V/mm. Therefore, it was found that the giant k 31 (d 31 ) and the minimum fc 31 appeared simultaneously at the specific poling fields of 10 00 V/mm≦E< ;15 00 V/mm.