Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes Ting Zhi, Tao Tao, Bin[.]
Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes Ting Zhi, Tao Tao, Bin Liu, Yi Li, Zhe Zhuang, Guogang Zhang, Zili Xie, Rong Zhang, and Youdou Zheng Citation: AIP Advances 5, 087151 (2015); doi: 10.1063/1.4929400 View online: http://dx.doi.org/10.1063/1.4929400 View Table of Contents: http://aip.scitation.org/toc/adv/5/8 Published by the American Institute of Physics AIP ADVANCES 5, 087151 (2015) Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes Ting Zhi, Tao Tao, Bin Liu,a Yi Li, Zhe Zhuang, Guogang Zhang, Zili Xie, Rong Zhang,a and Youdou Zheng Jiangsu Provincial Key Laboratory of Advanced photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures Nanjing University, Nanjing 210093, People’s Republic of China (Received 29 April 2015; accepted 30 July 2015; published online 18 August 2015) Through investigating the temperature dependent current-voltage (T-I-V ) properties of GaN based blue and green LEDs in this study, we propose an asymmetric tunneling model to understand the leakage current below turn-on voltage (V