Supplementary Material for Publication Reversible metallization and carrier transport behavior of In2S3 under high pressure Yuqiang Li,1 Yang Gao,2,3 Ningru Xiao,4 Pingfan Ning,1 Liyuan Yu,1 Jianxin Zhang,1 Pingjuan Niu,1,a) Yanzhang Ma,3 Chunxiao Gao2,a) Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology, School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin, 300387, People’s Republic of China State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, People’s Republic of China Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas, 79409, United States of America School of Science, Tianjin Polytechnic University, Tianjin, 300387, People’s Republic of China a) Author to whom correspondence should be addressed Email: niupingjuan@tjpu.edu.cn and cc060109@qq.com A1 Additional Figure Figure A1 Figure A1 (a) Configuration of a complete microcircuit on a diamond anvil: (1) the Mo electrodes, (2) the Al2O3 layer deposited on the Mo film; A, B, C, and D are the four contact ends of the microcircuit Figure A2 A2 Figure A2：The manufacturing process of the microcircuit on a diamond anvil (a)A clean diamond by H2SO4 and HNO3 chemical treatment (b)Molybdenum thin film was deposited on one diamond anvil (c)Molybdenum thin film was patterned into four detecting electrodes by photolithography technique and chemical etching (d) Al2O3 layer was deposited on the Mo film by means of the magnetron sputtering technique (e) Al2O3 layer thin film was patterned into four detecting electrodes by photolithography technique Additional Tables Table A1.The sputtering parameters of molybdenum film Item Sputtering method Sputtering target Operating gas Argon flux Operating pressure Sputtering power Substrate temperature Substrate distance Sputtering time Experimental parameter Radio Frequency Magnetron Sputtering Molybdenum Argon 40 sccm 1.0 Pa 90 W 573 K cm 300 s A3 Table A2.The parameters of photolithography process Item Photolithography method Photoresist type Coating rate Prebake temperature Prebake time Experimental parameter Contact photolithography Positive photoresist 4000 rpm 373K 480~600 s Exposure source Exposure time Developing solution Mercury lamp 50~70 s NaOH (0.5%) Postbake temperature Postbake time 373 K 480~600 s Table A3.The sputtering parameters of alumina film Item Sputtering method Sputtering target Operating gas Oxygen flux Argon flux Operating pressure Sputtering power Substrate temperature Substrate distance Sputtering time Experimental parameter Reactive sputtering Aluminum：99.99：： Argon and Oxygen 2.4 sccm 30 sccm 1.0 Pa 90 W 573 K cm 4h A4