VNU Journal of Science Mathematics – Physics, Vol 37, No 3 (2021) 82 92 82 Original Article The Resistive Switching Characteristics and Electrical Conduction Mechanisms of Memory Devices Based on Nanocomposite Doan Thi Tu Uyen1,2, Le Pham Quynh Nhu Phuong1,2, Mai Ngoc Xuan Dat2,3, Pham Kim Ngoc1,2,* 1VNU HCM University of Science, 227 Nguyen Van Cu, District 5, Ho Chi Minh City, Vietnam 2Vietnam National University, Ho Chi Minh City, Vo Truong Toan, Thu Duc, Ho Chi Minh City, Vietnam 3Center f[.]