Circuits & Electronics P2
... 6.002 Fall 2000 Lecture 1 2 6.002 CIRCUITS AND ELECTRONICS Basic Circuit Analysis Method (KVL and KCL method) 6.002 Fall 2000 Lecture 2 ... =+−+− GeGeeGVe KCL at 1 e 0)()()( 152402312 =−+−+− IGeGVeGee KCL at 2 l move constant terms to RHS & collect unknowns )()()( 10323211 GVGeGGGe =−+++ 140543231 )()()( IGVGGGeGe +=+++− i i R G
Ngày tải lên: 27/10/2013, 22:15
... 6.002 Fall 2000 Lecture 1 25 6.002 CIRCUITS AND ELECTRONICS Violating the Abstraction Barrier 6.002 Fall 2000 Lecture 10 25 Why? Consider crosstalk! 1 R 0 R DEMO 2 R C dt dV α DEMO ok dt dV C 6.002 ... signals characteristic impedance →R T2 T 5 2.5 0 V5 0 V5 0 V5 6.002 Fall 2000 Lecture 6 25 Question: So why did our circuits work? More in 6.014 t V5 V5.2 3. Termination P a r a l l...
Ngày tải lên: 22/12/2013, 19:17
... 6.002 Fall 2000 Lecture 1 24 6.002 CIRCUITS AND ELECTRONICS Power Conversion Circuits and Diodes 6.002 Fall 2000 Lecture 10 24 Now consider — a half-wave ... Conversion Circuits (PCC) Power efficiency of converter important, so use lots of devices: MOSFET switches, clock circuits, inductors, capacitors, op amps, diodes Reading: Chapter 16 and 4.4 of A & ... u s e r es i s t...
Ngày tải lên: 22/12/2013, 19:17
Tài liệu Circuits & Electronics P23 pptx
... switching capacitor. independent of f. MOSFET ON half the time. STATIC P DYNAMIC P constant time "RC" 2 T RR ONL >> >> Square wave input f T 1 = Demo Review In standby mode, half the gates ... 6.002 Fall 2000 Lecture 1 23 6.002 CIRCUITS AND ELECTRONICS Energy, CMOS 6.002 Fall 2000 Lecture 10 23 For our previous example — 1,MHz100f,V5VF,f1C S === “keep ... MOSFET...
Ngày tải lên: 22/12/2013, 19:17
Tài liệu Circuits & Electronics P22 pdf
... 1 22 6.002 CIRCUITS AND ELECTRONICS Energy and Power 6.002 Fall 2000 Lecture 10 22 Putting the two together: Energy dissipated in each cycle 2 S 2 S CV 2 1 CV 2 1 += 21 EEE += C gdischargin & ... Lecture 13 22 We can show (see section 12.2 of A & L) () () 2 ONL 2 L 2 S ONL 2 S RR R fCV RR2 V P + + + = fCV R2 V P 2 S L 2 S += when R L >> R ON What is for gate? P r e m e...
Ngày tải lên: 22/12/2013, 19:17
Tài liệu Circuits & Electronics P21 docx
... feedback + – 2 R o v 1 R i v 21 1 RR Rv v o + = + 21 1 RR RV v S + = + 21 1 RR RV v S + − = − So Vv += 15 So Vv −= 15− 15 e. g. 21 = = S V RR 5.7v v)vv( i > >= − +− 5.7−< < − + − v vv i v 6.002 Fall 2000 Lecture 11 21 Why is hysteresis useful? e.g., ... disturbance to v o (noise). Now, let’s build some useful circuits with positive feedback. + > − γγif stableeKv positiveisT...
Ngày tải lên: 22/12/2013, 19:17
Tài liệu Circuits & Electronics P20 pdf
... resistor i R v I → O O v d t dv RC >> when I O v d t dv RC ≈ dtv RC 1 v t IO ∫ ∞− ≈ or IO O vv d t dv RC =+ R v larger the RC, smaller the v O for good integrator ωRC >> 1 I v + – i + – O v C R v + – R Demo 6.002 ... converters Filters Clock generators Amplifiers Adders Integrators & Differentiators Reading: Chapter 15.5 & 15.6 of A & L. + – Review ∞ input resistanc...
Ngày tải lên: 22/12/2013, 19:17
Resource Handbook of Electronics P2
... PRESS LLC Whitaker, Jerry C. “International Standards and Constants” The Resource Handbook of Electronics. Ed. Jerry C. Whitaker Boca Raton: CRC Press LLC, ©2001 © 2001 by CRC PRESS LLC Chapter ... for 50 years or more should not be taken lightly. 2.3 References 1. Whitaker, Jerry C. (ed.), The Electronics Handbook, CRC Press, Boca Raton, FL, 1996. 2.4 Bibliography Whitaker, Jerry C., and...
Ngày tải lên: 17/10/2013, 11:15
Circuits & Electronics P1
... 6.002 CIRCUITS AND ELECTRONICS Introduction and Lumped Circuit Abstraction 6.002 Fall 2000 Lecture 1 1 ADMINISTRIVIA Lecturer: Prof. Anant Agarwal Textbook: Agarwal and Lang (A&L) ... let’s assume this 6.002 Fall 2000 Lecture 1 16 f r o m M a x we l V Must also be defined. s e e A & L So let’s assume this too V AB So V AB = ∫ AB E ⋅ dl defined when 0 = ∂ ∂ t B φ outside elemen...
Ngày tải lên: 27/10/2013, 22:15
Circuits & Electronics P5
... model D S G D S TGS Vv < G TGS Vv ≥ ON R D S G e.g. Ω= KR ON 5 6.002 Fall 2000 Lecture 19 5 SR Model of MOSFET MOSFET S model TGS Vv ≥ TGS Vv < DS i DS v MOSFET SR model TGS Vv ≥ TGS Vv < DS i DS v ON R 1 D S G D S TGS Vv ... i n t e r n a l s t r uc t u r e . TGS Vv < TGS Vv ≥ VV T 1≈ typically on G D S DS i G off D S 6.002 Fall 2000 Lecture 14 5 Check the MOS device on a scop...
Ngày tải lên: 06/11/2013, 07:15