Medici simulations of ion beam irradiated silicon under anodization

... Patterned porous silicon luminescence work makes use of ion beam irradiation to pattern porous regions in bulk silicon Namely, by first irradiating certain regions of the bulk silicon with ions and thus ... irradiation and 10 times that of region for hydrogen irradiation •Region 3: no defect region Located below the non -irradiated surface or deeper than the end -of- range o...

Ngày tải lên: 26/11/2015, 10:48

... control by ion beam irradiation, the ion beam conditions for our ion beam equipment were optimized and were 70 eV, 20 µA/cm2, and 10° In our ion beam equipment, ion beam irradiation with an ion ... Zenithal alignment of liquid crystal on homeotropic polyimide film irradiated by ion beam Yoonseuk Choi1, Tae-Hoon Yoon 2, Jin Hyuk Kwon3, Jonghoong Yi3, and J...

Ngày tải lên: 20/06/2014, 23:20

... Position is plotted vertically along the sample where one region has a 20-nm Au film (top of Figure 1) and the bottom region only Si (c-d) SEM images corresponding to the postirradiation condition ... concentration of gold in the sample during irradiation as a function of fluence after LEISS and XPS quantification The plot of relative concentration (% Au) versus fluence displays t...

Ngày tải lên: 21/06/2014, 03:20

... machining process via ion beam irradiation will be applied to fabrications of silicon photonics in 2D and 3D on bulk silicon and SOI platforms The ion beam irradiation induced silicon machining process ... in Si photonics A review of other studies on the fabrication of Si photonic devices is also presented 1.1 Photonics and Si photonics The word photo...

Ngày tải lên: 10/09/2015, 09:04

... clamping increases the risk of breaking fragile wafers, and any inappropriate clamping may cause leakage of the electrolyte 2.2.2 Material analysis and morphology studies After ion irradiation ... anodization of ion irradiated Si Fig of [21] MEDICI plots of E-field during anodization in a region of Ω.cm wafer containing a line irradiated with a 2MeV proton of...

Ngày tải lên: 11/09/2015, 21:37

... atoms near the surface, as compared with those in the bulk, and the increasing dominance of the surface would decrease the strength of the structure 3.2 The melting properties of the SiNWs The variation ... materials [36] The change of the melting temperature of nanostructures depends on their surface This indicates that the unstable surface of free-s...

Ngày tải lên: 16/03/2014, 15:18

... AL.: DEGRADATION OF BACTERIA ESCHERICHIA COLI EXPERIMENTAL 2.1 Sample preparation Bacteria Escherichia coli (E coli) were cultivated according to the standard procedure In experiment we used bacteria ... The source of Ar ions is a commercial ion gun used for sputtering of materials during depth profiling Ar ion beam with the energy of keV at an incidence a...

Ngày tải lên: 18/05/2014, 20:33

... obtaining an efficient blocking layer in DSSCs The performance of the SHI-irradiated blocking layer was investigated in comparison with the unirradiated (pristine) and conventional spin-coated TiO2 ... Sudhagar et al.: Efficient Performance of Electrostatic Spray-Deposited TiO2 Blocking Layers in Dye-Sensitized Solar Cells after Swift Heavy Ion B...

Ngày tải lên: 21/06/2014, 08:20

... The top intrinsic part is converted to n-type f SEM image of an SOG-coated NW g A p–n junction NW after the P ion implantation and removal of the SOG h SEM image of a p–n junction NW 3.2 1013 cm-2, ... rectangular dopant profile The implantation energies were 45 and 25 keV corresponding to doses of 1.3 1014 and 123 Fig The scheme of fabricating axial p–n jun...

Ngày tải lên: 22/06/2014, 00:20

... conditions, differences between film batches, entrance position of the range telescope, W-value, and positioning of ionization chambers within the water phantom are not relevant because beam tracking ... central region of interest (20 × 30 mm2) by mean, standard Pin-point ionization chambers (absorbed dose) For the relative dose data of the ionization chamber array, mean, standard...

Ngày tải lên: 09/08/2014, 09:20

Ngày tải lên: 14/11/2014, 06:41

... shows a typical cross section of a beam- sample interaction for a helium ion beam, in comparison with interactions for a gallium ion beam and an electron beam of the same beam diameter at 30 keV The ... profile data are extracted from the two rectangular areas for beam spot size analysis in horizontal and vertical directions 83 Figure 3.20 Shape of...

Ngày tải lên: 09/09/2015, 10:15

... continuum models suitable to analyze mechanics of carbon nanotube (CNT) under uni -axial deformation, torsion, and vibration In general, continuum models of CNT are calibrated from atomistic simulations ... 87 4.2 Torsional buckling of CNT 96 4.2.1 Definition of torsional buckling 96 4.2.2 Torsional buckling results for non-chiral SWCNTs 98 4.2.3 Effect of θ an...

Ngày tải lên: 09/09/2015, 11:19

... CHARACTERIZATION OF CARBON IN SILICON 38 3.1 38 Carbon in silicon 3.1.1 Epitaxy Incorporation of carbon 3.1.2 Maximizing substitutional carbon incorporation 3.2 Quantification of the carbon content ... suppression of boron diffusion [19-21] and elimination of implantation EOR defects [22, 23] in the presence of carbon The combined effects of dopant diff...

Ngày tải lên: 12/09/2015, 09:28

... A MODELING STUDY OF ION IMPLANTATION IN CRYSTALLINE SILICON INVOLVING MONTE CARLO AND MOLECULAR DYNAMICS METHODS CHAN HAY YEE, SERENE {B Eng (Hons.), NUS} A THESIS SUBMITTED FOR THE DEGREE OF ... miniaturization and remains an active area of study Ion implantation has been a dominant tool for introducing dopants into the silicon crystal A ty...

Ngày tải lên: 12/09/2015, 21:02