Contact and source drain engineering for advanced III v field effect transistors

... Abstract Contact and Source/ Drain Engineering for Advanced III- V Field- Effect Transistors By Kong Yu Jin, Eugene Doctor of Philosophy – Electrical and Computer Engineering National University ... metallization V Voltage Vd Voltage or bias applied to the drain of a MOSFET Vdd Supply voltage Vg Voltage or bias applied to the gate of a MOSFET Vt,sat Saturation thr...

Ngày tải lên: 30/09/2015, 05:43

... capping layer tf Thickness of film tf,Ni Thickness of nickel film tf,Ni -InGaAs Thickness of Ni -InGaAs film TInGaAs Thickness of InGaAs tMETAL Metal thickness tNi Nickel thickness Tn -InGaAs Thickness ... transistor (N- MOSFET) Subsequently, a history of S/D engineering in III-V MOSFETs is presented in Section 2.5 In addition, self-aligned S/D contact technology for InGaAs...

Ngày tải lên: 09/09/2015, 11:26

... STRAIN ENGINEERING FOR ADVANCED SILICON, GERMANIUM AND GERMANIUM- TIN TRANSISTORS CHENG RAN (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... Transistors 69 4.1.2 Strain Engineering for Ge P-channel MOSFETs (pMOSFETs) 71 4.2 4.3 Key Concept: Exploiting Ge2Sb2Te5 for Strain Engineering 73 Stress Simulation and ... Ge Trimmi...

Ngày tải lên: 09/09/2015, 11:28

... ADVANCED TRANSISTORS FOR SUPPLY VOLTAGE REDUCTION: TUNNELING FIELD- EFFECT TRANSISTORS AND HIGH- MOBILITY MOSFETS GUO PENGFEI (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE ... tr Rise time s V Voltage V Va Voltage amplitude V Vbase Base level voltage V VDD Supply voltage V VDS Drain voltage V VFB Flatband voltage V VGS V VTH Gate voltage Max...

Ngày tải lên: 10/09/2015, 09:01

... STRAIN ENGINEERING FOR ADVANCED SILICON TRANSISTORS DING YINJIE (B.Eng.(Hons.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ... 1.2   Strained Si Transistor Technology 3  1.3   Strain Effects on Carrier Mobility 6  1.4   Strain Engineering for Advanced Transistor Architectures 16  1.4.1   Strain...

Ngày tải lên: 10/09/2015, 09:26

... STRAIN ENGINEERING FOR ADVANCED TRANSISTOR STRUCTURE TAN KIAN MING (B ENG (HONS.)), NUS (M ENG.), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... can induce strain in the transistor channel [2.2], and the localized strain could be exploited to enhance the performance of aggressively scaled transistors While many approaches to strained-Si ... to investigat...

Ngày tải lên: 14/09/2015, 14:13

... TUNNELING FIELD- EFFECT TRANSISTORS FOR LOW POWER LOGIC: DESIGN, SIMULATION, AND TECHNOLOGY DEMONSTRATION YANG YUE (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... relatively large bandgap, leading to a low band-to-band tunneling (BTBT) rate and low drive current for Si TFETs Therefore, novel structure designs and materials are need adv...

Ngày tải lên: 10/09/2015, 09:24

... oxygen and water molecules into the film more difficult, hence minimizing the doping of the polymer at the semiconductor- insulator interface 1.3 Nature of charge carriers The intrinsic motion of charge ... limited by the interchain transport of charge carriers instead of the relatively fast intrachain transport in the absence of backbone imperfections The morphology of the...

Ngày tải lên: 10/09/2015, 08:34

... characterization of Schottky contacts on n -GaN 64 Rh -based Schottky contacts on n -GaN 66 3.2 3.2.1 Electrical properties of Rh -based Schottky contacts on n -GaN 66 3.2.2 Role of Ni in Rh -based Schottky contacts ... INVESTIGATION ON PERFORMANCE AND RELIABILITY IMPROVEMENTS OF GAN- BASED HETEROSTRUCTURE FIELD EFFECT TRANSISTORS TIAN FENG (M Eng.,...

Ngày tải lên: 11/09/2015, 10:05

... FABRICATION AND CHARACTERIZATION OF TUNNELING FIELD EFFECT TRANSISTORS (TFETs) YANG LITAO B Eng (Hons.), NUS A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL ... Chapter Experimental Study of Tunneling Field Effect Transistors This chapter documents the experimental study on the fabrication of tunneling field effe...

Ngày tải lên: 06/10/2015, 20:36

... thickness nm Tox Equivalent oxide thickness nm VFB Flatband voltage V Gate voltage V Threshold voltage V RIII -V RNi-InGaAs VG VT or VT' ' xxiii ∆VT Threshold voltage shift V W Contact width μm Weff ... Abstract Self- Aligned Source and Drain Contact Engineering For High Mobility III- V Transistor by ZHANG Xin Gui Doctor of Philosophy – Electrical and Comp...

Ngày tải lên: 09/09/2015, 10:14

... ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR MULTIPLE- GATE TRANSISTORS RINUS TEK PO LEE A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILIOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ... 161 vi Abstract Advanced Source and Drain Contact Engineering for Multiple- Gate Transistors by Rinus Tek Po Lee Doctor of Philosophy − Electric...

Ngày tải lên: 15/09/2015, 21:48

... ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR LOW PARASITIC SERIES RESISTANCE KOH TIAN YI, ALVIN (B.ENG (HONS.), NUS) A THESIS SUBMITTED FOR THE DEGREE OF MASTER ENGINEERING DEPARTMENT ... Annealing on Silicon-Carbon Source/ Drain in MuGFETs 5.2 83 84 Future Work 85 Appendix A: Publication List 86 v Advanced Source/ Drain Contact Engineering For Lo...

Ngày tải lên: 26/09/2015, 11:07

... ADVANCED CONTACT ENGINEERING FOR SILICON, GERMANIUM, GERMANIUM- TIN DEVICES TONG YI (M Eng.), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ... on contact engineering for Si, Ge, and GeSn devices Low contact resistance is needed for advanced Si based devices and also new generation of Ge or GeSn base...

Ngày tải lên: 09/09/2015, 11:07