High k dielectric MIM capacitors for silicon RF and analog applications

... Yoshitomi, Y Ebuchi, H Kimijama, T Ohguro, E Morifuji, H S Momose, K Kasai, K Ishimaru, F Matsuoka, Y Katsumata, M Kinugawa, and H Iwai, High performance MIM capacitor for RF BiCMOS LSIs,” in Proc ... method, and a high capacitance density of 17 fF/µm2 has been achieved for AlTaOx MIM capacitor [41] In particular, the RF performance of high- κ MIM capacitors have b...

Ngày tải lên: 16/09/2015, 17:11

... MIM capacitors This section briefly reviews some of the dominant works on the high- k dielectrics in the MIM capacitors for RF applications The insulators used in these works can be classified into ... loss Metal Metal -Insulator -Metal capacitor Fig 1-2: Development of capacitors for silicon integrated circuit from poly-insulatorsilicon structure [4] to poly -insul...

Ngày tải lên: 10/09/2015, 08:31

... Fo und e d High- κ Metal- Insulator -Metal (MIM) Capacitors for RF/ Mixed- Signal IC Applications KIM SUN JUNG M Eng A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... 27.1 nm thick HfO2 MIM capacitors, which are low enough for most RF and analog applications The requirements for specific applications are indicated with dashed lines 34 Fig 3.4 Perf...

Ngày tải lên: 16/09/2015, 15:54

... EOT = ε SiO T ε high − k high − k , phy (2-3) where EOT is the Equivalent Oxide Thickness of high- k dielectric, εSiO2 and high- k are the permittivity of SiO2 (3.9) and the high- k dielectrics, ... and Thigh -k, phy is the physical thickness of the high- k film In searching suitable high- κ dielectric materials for MIM capacitors, a simple criterion is h...

Ngày tải lên: 12/09/2015, 11:24

... investigation Another exploration of high- k dielectrics for SONOS type memory is to use highk dielectrics as charge storage layer instead of nitride The potential advantages of high- k charge storage ... the formation of NCs, device integration, and the memory performance The implementation of high- k dielectric instead of SiO2 brings additional advantage...

Ngày tải lên: 14/09/2015, 13:32

... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Al...

Ngày tải lên: 16/10/2015, 15:37

... Flash Memory Devices 1.2 Flash Memory Devices Among various non- volatile memory devices, floating gate (FG) type flash memory devices are the core of every modern non- volatile semiconductor memory ... newer applications Thanks to the characteristics of non- volatile memory, it offers a wide range of applications from industrial computers to consumer hand...

Ngày tải lên: 11/09/2015, 09:16

... mask effect on gate stacks of metal electrode / high- K dielectric should be investigated and understood for successful implementation of hard mask in the gate stack 1.3.4 Challenges of Metal Electrode ... replace current SiO2 dielectric and poly-Si electrode for continuous success of CMOS technology The study on the formation of advanced gate stacks usin...

Ngày tải lên: 12/09/2015, 08:16

... thicker layer of oxides of higher dielectric constant (k) Intensive research is underway to develop oxides into new high quality electronic materials 1.4 Alternative high- k gate dielectrics candidates ... process from gate dielectric to Si channel While SiO2 provides us with the remarkable properties as the gate dielectric, the gate leakage current increases exponentially a...

Ngày tải lên: 13/09/2015, 20:42

... the high- k material in consideration EOT is given by tox  thigh  k  kSiO2 / khigh  k , where thigh  k and khigh  k are the physical thickness and relative dielectric constant of high- k dielectric, ... density Jg Gate leakage current density k Dielectric constant (relative permittivity) kGe Dielectric constant of Ge (relative permittivity) khigh -k Di...

Ngày tải lên: 14/09/2015, 08:25

... etching process can be used for metal gate integration using the AlN layer Although a wider range of work function was obtained using FUSI HfSi gate on SiO2, more study HfSi gate on high- K dielectric ... several gate dielectrics has been explained using experimental data in conjunction with interface dipole theory [1.52] The work function of polysilicon gates on high- K,...

Ngày tải lên: 16/09/2015, 08:31

... of human subjects Acknowledgments Dharani Babu Shanmugam and Haricharan Padmanabana Computer Programmers assisted with program and code implementation Kara Scott for her help with the evaluation ... evaluation of the algorithm, compilation, and fieldwork Jameson Lwebuga-Mukasa for asthma datasets and Anne Evens and Patrick MacRoy for BLL dataset Special thanks to anonymous rev...

Ngày tải lên: 21/06/2014, 16:20

... ADVANCED CONTACT ENGINEERING FOR SILICON, GERMANIUM, GERMANIUM- TIN DEVICES TONG YI (M Eng.), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ... on contact engineering for Si, Ge, and GeSn devices Low contact resistance is needed for advanced Si based devices and also new generation of Ge or GeSn base...

Ngày tải lên: 09/09/2015, 11:07

... design and analysis of algorithms, architectures and protocols for mobile computing and communications, including techniques for locating mobile users, mobile database access, and mobile sales applications ... site-transaction escrow method, that is suitable for sales and inventory applications supporting both stationary and mobile users We provided a...

Ngày tải lên: 16/03/2014, 15:20