Advanced materials and novel devices for CMOS applications
... p-FET performance i In summary, novel devices employing novel strain engineering techniques were studied They show promising potential for augmenting the performance of conventional CMOS transistors ... describe to my daddy, my mummy and my lovely brother, Henry I thank them for their care and love in my entire life, and thank daddy and mummy for the sacrifices they have...
Ngày tải lên: 14/09/2015, 08:37
Ngày tải lên: 14/11/2014, 08:07
... devices for BioMEMS applications The emphasis is on the development of new hot embossing techniques, the design of microfluidic functions and biocompatible packaging methods for polymeric microfluidic ... design and implementation of necessary microfluidic functions; integration of these functions with complete automation; and development of cost-effective ma...
Ngày tải lên: 14/11/2014, 13:26
Advanced silicon and germanium transistors for future p channel MOSFET applications
... etch recipes for poly Si gate etch (main etch for removing poly Si in planar region) and poly Si spacer removal etch (over etch step) The poly Si over etch recipe employs HBr and smaller power to ... compares material characteristics of potential channel materials for future CMOS applications, showing 10 Table 1.1 Material characteristics of potential channel materials for...
Ngày tải lên: 08/09/2015, 17:50
Novel devices for enhanced CMOS performance
... Technology Trend : Novel Devices and Architecture for Enhanced Performance CMOS Performance …………… 1.2.2 Channel Strain Engineering ………………………………………………… 1.2.3 Silicon-On-Insulator (SOI) for reduced ... ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE 2006 Novel Devices for Enhanced CMOS Performance ABSTRACT Complementary Metal Oxide Semiconductor (CMOS) transistors form...
Ngày tải lên: 14/09/2015, 18:14
mems advanced materials and fabrication methods nat aca press ppt
Ngày tải lên: 05/03/2014, 15:20
Báo cáo hóa học: " Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results" pptx
... HOMO and LUMO states for the pure and alloyed 32-atoms NCs Due to the Td symmetry of the initial systems, the HOMO state forms a degenerate triplet before the relaxation, and therefore, for a ... (NCs) embedded in wide band gap SiO2 matrices, and free-standing SiGe mixed nanowires (NWs) These systems have been chosen for their application in photovoltaics, and therefore our re...
Ngày tải lên: 21/06/2014, 17:20
MEMS Advanced Materials and Fabrication Methods - Nat. Aca. Press Part 1 pdf
Ngày tải lên: 10/08/2014, 05:20