Schottky barrier engineering for contact resistance reduction in nanoscale CMOS transistors

Schottky barrier engineering for contact resistance reduction in nanoscale CMOS transistors

Schottky barrier engineering for contact resistance reduction in nanoscale CMOS transistors

... Schottky Barrier Engineering for Contact Resistance Reduction in Nanoscale CMOS Transistors by Mantavya Sinha Doctor of Philosophy – Electrical and Computer Engineering National University of Singapore ... is on Schottky barrier engineering for contact resistance reduction in CMOS FETs Various material and process innovations are explored for the lo...
Ngày tải lên : 14/09/2015, 08:26
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Schottky barrier engineering for contacts in advanced CMOS technology

Schottky barrier engineering for contacts in advanced CMOS technology

... SCHOTTKY BARRIER ENGINEERING FOR CONTACTS IN ADVANCED CMOS TECHNOLOGY PHYLLIS LIM SHI YA (B ENG (HONS.)), NATIONAL UNIVERSITY OF SINGAPORE A THESIS SUBMITTED FOR THE DEGREE OF ... in CMOS technology 14 1.6 Modulation of Schottky barrier height 16 1.6.1 S/D material engineering 16 1.6.2 Dopant segregation engineering 17 1.6.3 Interface engineering ... of Ge...
Strain engineering for advanced silicon, germanium and germanium tin transistors

Strain engineering for advanced silicon, germanium and germanium tin transistors

... STRAIN ENGINEERING FOR ADVANCED SILICON, GERMANIUM AND GERMANIUM- TIN TRANSISTORS CHENG RAN (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... Transistors 69 4.1.2 Strain Engineering for Ge P-channel MOSFETs (pMOSFETs) 71 4.2 4.3 Key Concept: Exploiting Ge2Sb2Te5 for Strain Engineering 73 Stress Simulation and ... Ge Trimmi...
Ngày tải lên : 09/09/2015, 11:28
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Advanced transistors for supply voltage reduction tunneling field effect transistors and high mobility MOSFETS

Advanced transistors for supply voltage reduction tunneling field effect transistors and high mobility MOSFETS

... ADVANCED TRANSISTORS FOR SUPPLY VOLTAGE REDUCTION: TUNNELING FIELD- EFFECT TRANSISTORS AND HIGH- MOBILITY MOSFETS GUO PENGFEI (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE ... tr Rise time s V Voltage V Va Voltage amplitude V Vbase Base level voltage V VDD Supply voltage V VDS Drain voltage V VFB Flatband voltage V VGS V VTH Gate voltage Max...
Ngày tải lên : 10/09/2015, 09:01
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Advanced source and drain contact engineering for low parasitic series resistance

Advanced source and drain contact engineering for low parasitic series resistance

... ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR LOW PARASITIC SERIES RESISTANCE KOH TIAN YI, ALVIN (B.ENG (HONS.), NUS) A THESIS SUBMITTED FOR THE DEGREE OF MASTER ENGINEERING DEPARTMENT ... Annealing on Silicon-Carbon Source/ Drain in MuGFETs 5.2 83 84 Future Work 85 Appendix A: Publication List 86 v Advanced Source/ Drain Contact Engineering For Lo...
Ngày tải lên : 26/09/2015, 11:07
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Tài liệu Báo cáo khoa học: Computational processing and error reduction strategies for standardized quantitative data in biological networks doc

Tài liệu Báo cáo khoa học: Computational processing and error reduction strategies for standardized quantitative data in biological networks doc

... article online: DOC S1 Computational processing and error reduction strategies for standardized quantitative data in biological networks This material is available as part of the online article ... protein standard depicted in Fig Smoothing spline curves through original and normalized data are shown as solid lines Using calibrators for error reduction...
Ngày tải lên : 19/02/2014, 07:20
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A new mechanism for modulation of schottky barrier heights on silicon nanowires

A new mechanism for modulation of schottky barrier heights on silicon nanowires

... in contact with the end surfaces of the wires were obtained by annealing at 250 1C for 20 Using the Pd2Si contacts as source and drain and the silicon substrate as a back-gate, a transistor configuration ... configuration, contact geometry and charge distribution are demonstrated in Fig The preparation started from an SOI wafer with a silicon film thickness of 55 nm and a burie...
Ngày tải lên : 16/03/2014, 15:14
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Báo cáo khoa học: Gene regulation by tetracyclines Constraints of resistance regulation in bacteria shape TetR for application in eukaryotes Christian Berens and Wolfgang Hillen pptx

Báo cáo khoa học: Gene regulation by tetracyclines Constraints of resistance regulation in bacteria shape TetR for application in eukaryotes Christian Berens and Wolfgang Hillen pptx

... [104,105] and in S cerevisiae [88] have lead to a profound understanding of how DNA binding, inducer binding and dimerization function in TetR This informa- Gene regulation by tetracyclines (Eur ... concentrations of tc for full induction [15] These conflicting requirements are met by the genetic organization of the resistance determinants (reviewed in [6]) and...
Ngày tải lên : 23/03/2014, 21:20
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Báo cáo toán học: " A novel method for crystalline silicon solar cells with low contact resistance and antireflection coating by an oxidized Mg layer" ppt

Báo cáo toán học: " A novel method for crystalline silicon solar cells with low contact resistance and antireflection coating by an oxidized Mg layer" ppt

... the contact resistance To calculate the contact resistance, Mg was evaporated on the n-Si wafer, and the Ag paste was printed on the Si wafer for reference The contact resistances of Mg/ Si and Ag/Si ... A novel method for crystalline silicon solar cells with low contact resistance and antireflection coating by an oxidized Mg layer Jongh...
Ngày tải lên : 20/06/2014, 21:20
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Báo cáo hóa học: " Suitability of bilateral filtering for edge-preserving noise reduction in PET" pdf

Báo cáo hóa học: " Suitability of bilateral filtering for edge-preserving noise reduction in PET" pdf

... Conclusion Bilateral filtering exhibits superior properties in comparison to the smoothing filters routinely applied for noise reduction in PET Bilateral filtering allows to increase the SNR of PET ... necessity for improvement of the SNR, our results indicate that bilateral filtering is a superior alternative to the standard smoothing filters Evaluation of the p...
Ngày tải lên : 20/06/2014, 23:20
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báo cáo hóa học: " Selected basis for PAR reduction in multi-user downlink scenarios using lattice-reduction-aided precoding" doc

báo cáo hóa học: " Selected basis for PAR reduction in multi-user downlink scenarios using lattice-reduction-aided precoding" doc

... as: Siegl and Fischer: Selected basis for PAR reduction in multi-user downlink scenarios using lattice -reduction- aided precoding EURASIP Journal on Advances in Signal Processing 2011 2011:17 ... http://asp.eurasipjournals.com/content/2011/1/17 Par reduction in point-to-multipoint scenarios Review of selected mapping in multi-antenna environments In the li...
Ngày tải lên : 21/06/2014, 02:20
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Báo cáo hóa học: " Research Article A Suboptimal PTS Algorithm Based on Particle Swarm Optimization Technique for PAPR Reduction in OFDM Systems" potx

Báo cáo hóa học: " Research Article A Suboptimal PTS Algorithm Based on Particle Swarm Optimization Technique for PAPR Reduction in OFDM Systems" potx

... monopole antenna using a particle swarm optimization approach,” IEEE Transactions on Antennas and Propagation, vol 53, no 10, pp 1–7, 2005 [24] J Robinson and Y Rahmat-Samii, Particle swarm optimization ... Ho, A S Madhukumar, and F Chin, “Peak-to-average power reduction using partial transmit sequences: a suboptimal approach based on dual layered phase sequencing,”...
Ngày tải lên : 21/06/2014, 23:20
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Báo cáo hóa học: " Research Article Partial Transmit Sequences for Peak-to-Average Power Ratio Reduction in Multiantenna OFDM" pptx

Báo cáo hóa học: " Research Article Partial Transmit Sequences for Peak-to-Average Power Ratio Reduction in Multiantenna OFDM" pptx

... REVIEW OF PARTIAL TRANSMIT SEQUENCES FOR SINGLE ANTENNA SYSTEMS Original PTS (PTS-w) The idea behind the original PTS scheme from [5, 23] is to divide the information carrying frequency-domain OFDM ... sequences for peak-to-average power ratio reduction in multiantenna point-to-point OFDM has been studied In particular, the approaches (ordinary, simplified, and direct...
Ngày tải lên : 22/06/2014, 19:20
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