Hafnium oxide based high k dielectric gate stack
Hafnium oxide based high k dielectric gate stack
... thicker layer of oxides of higher dielectric constant (k) Intensive research is underway to develop oxides into new high quality electronic materials 1.4 Alternative high- k gate dielectrics candidates ... process from gate dielectric to Si channel While SiO2 provides us with the remarkable properties as the gate dielectric, the gate leakage current increases exponentially a...
Ngày tải lên: 13/09/2015, 20:42
Study on advanced gate stack using high k dielectric and metal electrode
... mask effect on gate stacks of metal electrode / high- K dielectric should be investigated and understood for successful implementation of hard mask in the gate stack 1.3.4 Challenges of Metal Electrode ... replace current SiO2 dielectric and poly-Si electrode for continuous success of CMOS technology The study on the formation of advanced gate stacks usin...
Ngày tải lên: 12/09/2015, 08:16
Development and characterization of high k dielectric germanium gate stack
... the high- k material in consideration EOT is given by tox thigh k kSiO2 / khigh k , where thigh k and khigh k are the physical thickness and relative dielectric constant of high- k dielectric, ... density Jg Gate leakage current density k Dielectric constant (relative permittivity) kGe Dielectric constant of Ge (relative permittivity) khigh -k Di...
Ngày tải lên: 14/09/2015, 08:25
Báo cáo hóa học: " Hf-based high-k materials for Si nanocrystal floating gate memories" doc
... decomposition process usually completes faster for thinner SRSO layer, resulting in the formation of Si- ncs and SiO2 phase (instead of SiOx one) So, the formation of Si- ncs/SiO2 barrier instead of Si- ncs/SiO ... al.: Hf-based high-k materials for Si nanocrystal floating gate memories Nanoscale Research Letters 2011 6:172 Submit your manuscript to a journal and benefit f...
Ngày tải lên: 21/06/2014, 05:20
Metal gate with high k dielectric in si CMOS processing
... etching process can be used for metal gate integration using the AlN layer Although a wider range of work function was obtained using FUSI HfSi gate on SiO2, more study HfSi gate on high- K dielectric ... several gate dielectrics has been explained using experimental data in conjunction with interface dipole theory [1.52] The work function of polysilicon gates on high- K,...
Ngày tải lên: 16/09/2015, 08:31
Reliability modeling of ultra thin gate oxide and high k dielectrics for nano scale CMOS devices
... that of the direct tunneling leakage current of 13 - 20 Å at its initial unstressed state higher than that of post-QB leakage in thicker oxides Due to this high gate leakage for ultra- thin oxides, ... Device Scaling and Dielectric Performance 23 2.5 Ultra- thin oxide Reliability 24 2.6 High- K Dielectrics Reliability 27 2.6.1 High- K charge trapping 28 2.6.2...
Ngày tải lên: 16/09/2015, 17:12
Novel III v mosfet integrated with high k dielectric and metal gate for future CMOS technology
... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Al...
Ngày tải lên: 16/10/2015, 15:37
Nền tảng Kiến trúc Penryn, công nghệ 45nm High-k metal gate của Intel pptx
... NetBust sang vi kiến trúc Core lúc với việc chuyển từ công nghệ 90nm sang công nghệ 65nm Và với hai năm sau, Intel thay đổi công nghệ 65nm công nghệ 45nm với vi kiến trúc Penryn, hai năm sau bạn ... công nghệ High-k 45nm Intel, họ vi xử lý Penryn xây dựng tính mang lại hiệu lượng vi kiến trúc Core với hai bổ xung quan trọng: công nghệ tắt nguồn s...
Ngày tải lên: 13/07/2014, 09:20
Application of high k dielectric to non volatile memory devices
... Flash Memory Devices 1.2 Flash Memory Devices Among various non- volatile memory devices, floating gate (FG) type flash memory devices are the core of every modern non- volatile semiconductor memory ... newer applications Thanks to the characteristics of non- volatile memory, it offers a wide range of applications from industrial computers to consumer hand...
Ngày tải lên: 11/09/2015, 09:16
Study on application of high k dielectric materials for discrete charge storage memory
... investigation Another exploration of high- k dielectrics for SONOS type memory is to use highk dielectrics as charge storage layer instead of nitride The potential advantages of high- k charge storage ... the formation of NCs, device integration, and the memory performance The implementation of high- k dielectric instead of SiO2 brings additional advantage...
Ngày tải lên: 14/09/2015, 13:32
High k dielectric MIM capacitors for silicon RF and analog applications
... Yoshitomi, Y Ebuchi, H Kimijama, T Ohguro, E Morifuji, H S Momose, K Kasai, K Ishimaru, F Matsuoka, Y Katsumata, M Kinugawa, and H Iwai, High performance MIM capacitor for RF BiCMOS LSIs,” in Proc ... method, and a high capacitance density of 17 fF/µm2 has been achieved for AlTaOx MIM capacitor [41] In particular, the RF performance of high- κ MIM capacitors have b...
Ngày tải lên: 16/09/2015, 17:11
Characterization and numerical simulation of gallium nitride based metal oxide semiconductor high electron mobility transistor with high k gate stack
... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...
Ngày tải lên: 03/10/2015, 20:31
Characterization and numerical simulation of gallium nitride based metal oxide semiconductor high electron mobility transistor with high k gate stack
... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...
Ngày tải lên: 12/10/2015, 17:36
Germanium MOSFETs with high k gate dielectric and advanced source drain structure
... Shang, K. -L Lee, P Kozlowski, C D Emic, I Babich, E Sikorski, M Ieong, H.-S P Wong, K Guarini, and W Haensch, “Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and ... Microprobe with a monochromatic and standard Al X-ray source 27 Chapter 2: Germanium MOS Device with High- κ Gate Dielectric 2.3 Results and discussion 2.3.1...
Ngày tải lên: 14/09/2015, 11:29
Gate stack engineering of germanium mosfets with high k dielectrics
... gate oxide thickness (tox) * tox=thigh -k* kSiO2/khigh -k, where thigh -k and khigh -k are the physical thickness and the effective relative permittivity of the high- k dielectric, Chapter 1: Introduction ... Copel, M.A Gribelyuk, H Okorn-Schmidt, C D’Emic, P Kozlowski, K Chan, N Bojarczuk, L.-A Ragnarsson, P Ronsheim, K Rim, R.J Fleming, A Mocuta, A Ajmera, “Ultrathin high- k...
Ngày tải lên: 15/09/2015, 17:09