Fabrication and characteristics of high k MIM capacitors for high precision applications

... EOT = ε SiO T ε high − k high − k , phy (2-3) where EOT is the Equivalent Oxide Thickness of high- k dielectric, εSiO2 and high- k are the permittivity of SiO2 (3.9) and the high- k dielectrics, ... and Thigh -k, phy is the physical thickness of the high- k film In searching suitable high- κ dielectric materials for MIM capacitors, a simple criterion is h...

Ngày tải lên: 12/09/2015, 11:24

... and encapsulated using glass rings and a biocompatible epoxy glue Please cite this article in press as: X.T Vu, et al., Fabrication and application of silicon nanowire transistor arrays for biomolecular ... et al., Fabrication and application of silicon nanowire transistor arrays for biomolecular detection, Sens Actuators B: Chem (2009), doi:10.101...

Ngày tải lên: 16/03/2014, 15:24

... function of the power of the pulsed laser and the CW laser The laser beam diameter of the CW laser is 40 ? m At these laser powers, melting does not occur Compared with the pulsed laser bending of ... pulsed laser and a CW laser Laser beams are tightly focused onto the target surface to induce localized residual stress and strain, thus to obtain high precisi...

Ngày tải lên: 06/05/2014, 08:55

... Yoshitomi, Y Ebuchi, H Kimijama, T Ohguro, E Morifuji, H S Momose, K Kasai, K Ishimaru, F Matsuoka, Y Katsumata, M Kinugawa, and H Iwai, High performance MIM capacitor for RF BiCMOS LSIs,” in Proc ... method, and a high capacitance density of 17 fF/µm2 has been achieved for AlTaOx MIM capacitor [41] In particular, the RF performance of high- κ MIM capacitors have b...

Ngày tải lên: 16/09/2015, 17:11

... Individual, family and offence characteristics of high risk childhood offenders: Comparing non -offending, onetime offending and re -offending Dutch-Moroccan migrant children in the Netherlands ... with re -offending in this group of childhood offenders While the main risk factors for offending were within the family domain, risk factors...

Ngày tải lên: 13/08/2014, 18:22

... MIM capacitors This section briefly reviews some of the dominant works on the high- k dielectrics in the MIM capacitors for RF applications The insulators used in these works can be classified into ... loss Metal Metal -Insulator -Metal capacitor Fig 1-2: Development of capacitors for silicon integrated circuit from poly-insulatorsilicon structure [4] to poly -insul...

Ngày tải lên: 10/09/2015, 08:31

... energy bandgap, and high electron mobility High electron mobility transistors (HEMTs) employing the AlGaN/GaN heterostructure further exploit the high electron mobility in the two-dimensional electron ... Abstract Fabrication and Characterization of Advanced AlGaN/GaN High- Electron- Mobility Transistors by LIU Xinke Doctor of Philosophy − Electrical...

Ngày tải lên: 10/09/2015, 09:11

... the high- k material in consideration EOT is given by tox  thigh  k  kSiO2 / khigh  k , where thigh  k and khigh  k are the physical thickness and relative dielectric constant of high- k dielectric, ... density Jg Gate leakage current density k Dielectric constant (relative permittivity) kGe Dielectric constant of Ge (relative permittivity) khigh -k Di...

Ngày tải lên: 14/09/2015, 08:25

... Fo und e d High- κ Metal- Insulator -Metal (MIM) Capacitors for RF/ Mixed- Signal IC Applications KIM SUN JUNG M Eng A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... 27.1 nm thick HfO2 MIM capacitors, which are low enough for most RF and analog applications The requirements for specific applications are indicated with dashed lines 34 Fig 3.4 Perf...

Ngày tải lên: 16/09/2015, 15:54

... manufacturing Analysis and performance The principle of operation of reluctance synchronous machines (RSMs) is based on existence of variable reluctance in the air gap of the machine, high reluctance ... P.J and Agu, L.A Theory and Performance of Polyphase Reluctance Machines Proc IEE, 111(8), pp 1435-1445, 1964 [2] Lawrenson, P.J and Gupta, S.K Develop...

Ngày tải lên: 05/09/2013, 16:30

... 2006 Acquisition and analysis of Langmuir probe characterization for ECR plasma Indian J Phys 80: 1011–1015 Jain S K, Jain A, Hannurkar P R, Kotaiah S 2007 Characterization of plasma parameter, ... distance for (a) mirror magnetic field, and (b) flat magnetic field the magnetic field can cause diffusion of the plasma particles to the wall of the plasma ch...

Ngày tải lên: 22/12/2013, 08:58

... range of 227-247 o C and the ratio of the height of the main peak to that of the other small peaks is rather great In order to obtain high sensitive LiF:Mg,Cu,Na,Si TL powder, the optimum preparation ... as a single dopant and its concentration was calculated as total of Na and Si because the compound Na2 SiO3.9H2 O was added) The X-ray diffraction (XRD) patterns of four...

Ngày tải lên: 13/02/2014, 04:20

... examines the characteristics of bank failures during 2007-10 and investigates whether the geographic distribution of failures reflected differences in local economic conditions The removal of restrictions ... banks on the basis of the number and location of branch offices The sharp increase in bank failures during the 1980s and the apparent...

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