Top down engineered silicon and germanium nanowire MOSFET

... nMOSFET and (b) a Schottky barrier nMOSFET 32 X Figure 3.4: Energy band diagram of (b-d) SB-pMOSFETs and (e-g) SBnMOSFET under various gate and drain bias VDS2 is more negative than VDS1 and ... materials and their mid-bandgap work function 11 1.4 Objectives and scopes This project is to explore the top- down engineered nanowire GAA MOSFET for future transistor applicatio...

Ngày tải lên: 11/09/2015, 09:57

... etch recipes for poly Si gate etch (main etch for removing poly Si in planar region) and poly Si spacer removal etch (over etch step) The poly Si over etch recipe employs HBr and smaller power to ... compares material characteristics of potential channel materials for future CMOS applications, showing 10 Table 1.1 Material characteristics of potential channel materials for...

Ngày tải lên: 08/09/2015, 17:50

... ADDRESSING PERFORMANCE BOTTLENECKS FOR TOP- DOWN ENGINEERED NANOWIRE TRANSISTORS JIANG YU B Sci (Peking University, P R China) 2005 A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... viable for GAA nanowire transistors, given its simplicity and effectiveness, and is hence explored in this thesis work In the following chapters, key performance bottlenecks for high p...

Ngày tải lên: 14/09/2015, 08:41

... Fig Band structure of (1 0), (1 0) and (1 1) Ge nanowires with D$20 A of the band gap and determines the overall nature of the nanowire band structure Si (100) Ge (100) where mà and mà are the ... towards the G2X bulk band gap The Ge nanowires converge towards different band gaps: (1 0) towards the G2L gap, whereas (1 0) and (1 1) nanowires c...

Ngày tải lên: 16/03/2014, 15:18

... models Optical properties of SiNWs and GeNWs In Section of the present paper, we aim to point out the importance of the many-body effects on the optical response of some of the studied nanowires ... [41] Optical gaps in SiNWs and GeNWs: quantum confinement and anisotropy effects In this section, we will describe the electronic properties of hydrogen passivated, free...

Ngày tải lên: 16/03/2014, 15:33

... HOMO and LUMO states for the pure and alloyed 32-atoms NCs Due to the Td symmetry of the initial systems, the HOMO state forms a degenerate triplet before the relaxation, and therefore, for a ... (NCs) embedded in wide band gap SiO2 matrices, and free-standing SiGe mixed nanowires (NWs) These systems have been chosen for their application in photovoltaics, and therefore our re...

Ngày tải lên: 21/06/2014, 17:20

... dielectric constant.22,25 Table 2.1: Summary of the dielectric constant (k), band gap (Eg), conduction (CBO) and valence band offsets (VBO) on Si values for rare earth (RE) oxides and transition metal ... explanation as to why rare earth oxides form good interfaces with Ge 2.1.1 Rare earth oxides as second generation high-k dielectrics The criterion of thermodynami...

Ngày tải lên: 09/09/2015, 17:54

... Fig 1a Pressure dependence of NND of Ge Fig 1b Pressure dependence of volume of Ge Fig 2a Temperature dependence of DWF of Ge Fig 2b Pressure dependence of DWF of Ge In Fig.3a, we plot the pressure ... INVESTIGATION OF EXAFS CUMULANTS OF SILICON AND 115 Fig 3b Pressure dependence of volume of Ge Fig 4a Temperature dependence of DWF of...

Ngày tải lên: 30/10/2015, 19:44

... look-ahead Nodes are expanded in a standard top-down, left-to-right fashion The parser utilizes: (i) a probabilistic context-free g r a m m a r (PCFG), induced via standard relative frequency ... (identified) relative to its children, and the point at which the rule expanding the parent is identified In pure top-down parsing, a parent category and the rule expanding it are announced...

Ngày tải lên: 20/02/2014, 19:20

... Non-English Major Students’ Attitudes Towards Bottom-up and Top-down Reading Tasks: A Survey Research at Phuc Yen College of Industry (PYCI) is the result of my own research for the Degree of ... information from the text to a visual or diagrammatic representation 1.5.1 Pre -reading tasks The pre -reading tasks in a reading are often aimed...

Ngày tải lên: 10/07/2015, 14:50

... ADVANCED CONTACT ENGINEERING FOR SILICON, GERMANIUM, GERMANIUM- TIN DEVICES TONG YI (M Eng.), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ... on contact engineering for Si, Ge, and GeSn devices Low contact resistance is needed for advanced Si based devices and also new generation of Ge or GeSn base...

Ngày tải lên: 09/09/2015, 11:07

... STRAIN ENGINEERING FOR ADVANCED SILICON, GERMANIUM AND GERMANIUM- TIN TRANSISTORS CHENG RAN (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... Transistors 69 4.1.2 Strain Engineering for Ge P-channel MOSFETs (pMOSFETs) 71 4.2 4.3 Key Concept: Exploiting Ge2Sb2Te5 for Strain Engineering 73 Stress Simulation and ... Ge Trimmi...

Ngày tải lên: 09/09/2015, 11:28

... nonvolatile flash memory cells, another type of nonvolatile memory based on discrete charge trapping is currently being considered as a promising alternative The discrete charge storage nonvolatile ... the SONOS type discrete charge storage nonvolatile memory in order to increase the possibility of it being employed in future semiconductor nonvolatile memo...

Ngày tải lên: 14/09/2015, 08:43