High k dielectrics in metal insulator metal (MIM) capacitors for RF applications

... MIM capacitors This section briefly reviews some of the dominant works on the high- k dielectrics in the MIM capacitors for RF applications The insulators used in these works can be classified into ... loss Metal Metal -Insulator -Metal capacitor Fig 1-2: Development of capacitors for silicon integrated circuit from poly-insulatorsilicon structure [4] to poly -insul...

Ngày tải lên: 10/09/2015, 08:31

... Fo und e d High- κ Metal- Insulator -Metal (MIM) Capacitors for RF/ Mixed- Signal IC Applications KIM SUN JUNG M Eng A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... 27.1 nm thick HfO2 MIM capacitors, which are low enough for most RF and analog applications The requirements for specific applications are indicated with dashed lines 34 Fig 3.4 Perf...

Ngày tải lên: 16/09/2015, 15:54

... MOSFET scaling 1.2 High- k dielectrics 1.3 Metal gates 1.4 Band alignments 1.4.1 Band offsets at high- k dielectrics/ semiconductor interfaces 1.4.2 Schottky barrier height at metal gate /high- k dielectrics ... dielectrics/ semiconductor interfaces 1.4.2 Schottky barrier height for metal gate /high- k dielectrics interfaces While metal gate shows its advantages as...

Ngày tải lên: 14/09/2015, 13:27

... etching process can be used for metal gate integration using the AlN layer Although a wider range of work function was obtained using FUSI HfSi gate on SiO2, more study HfSi gate on high- K dielectric ... several gate dielectrics has been explained using experimental data in conjunction with interface dipole theory [1.52] The work function of polysilicon gates on high- K,...

Ngày tải lên: 16/09/2015, 08:31

... mask effect on gate stacks of metal electrode / high- K dielectric should be investigated and understood for successful implementation of hard mask in the gate stack 1.3.4 Challenges of Metal Electrode ... replace current SiO2 dielectric and poly-Si electrode for continuous success of CMOS technology The study on the formation of advanced gate stacks usin...

Ngày tải lên: 12/09/2015, 08:16

... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Al...

Ngày tải lên: 16/10/2015, 15:37

... (EOT) [17] The impact of the polycrystallization of the Al O layer on the electrical conduction of the gate stack has been analyzed at the nanoscale from current and CPD images obtained on fresh ... strength of the grain boundaries Finally, the influence of the environment conditions on the study of polycrystalline high-k dielectrics was also anal...

Ngày tải lên: 21/06/2014, 06:20

... EOT = ε SiO T ε high − k high − k , phy (2-3) where EOT is the Equivalent Oxide Thickness of high- k dielectric, εSiO2 and high- k are the permittivity of SiO2 (3.9) and the high- k dielectrics, ... and Thigh -k, phy is the physical thickness of the high- k film In searching suitable high- κ dielectric materials for MIM capacitors, a simple criterion is h...

Ngày tải lên: 12/09/2015, 11:24

... gate oxide thickness (tox) * tox=thigh -k* kSiO2/khigh -k, where thigh -k and khigh -k are the physical thickness and the effective relative permittivity of the high- k dielectric, Chapter 1: Introduction ... Copel, M.A Gribelyuk, H Okorn-Schmidt, C D’Emic, P Kozlowski, K Chan, N Bojarczuk, L.-A Ragnarsson, P Ronsheim, K Rim, R.J Fleming, A Mocuta, A Ajmera, “Ultrathin high- k...

Ngày tải lên: 15/09/2015, 17:09

... Yoshitomi, Y Ebuchi, H Kimijama, T Ohguro, E Morifuji, H S Momose, K Kasai, K Ishimaru, F Matsuoka, Y Katsumata, M Kinugawa, and H Iwai, High performance MIM capacitor for RF BiCMOS LSIs,” in Proc ... method, and a high capacitance density of 17 fF/µm2 has been achieved for AlTaOx MIM capacitor [41] In particular, the RF performance of high- κ MIM capacitors have b...

Ngày tải lên: 16/09/2015, 17:11

... that of the direct tunneling leakage current of 13 - 20 Å at its initial unstressed state higher than that of post-QB leakage in thicker oxides Due to this high gate leakage for ultra- thin oxides, ... Device Scaling and Dielectric Performance 23 2.5 Ultra- thin oxide Reliability 24 2.6 High- K Dielectrics Reliability 27 2.6.1 High- K charge trapping 28 2.6.2...

Ngày tải lên: 16/09/2015, 17:12

... Mainstreaming MFIs Box “Mainstreamization” of microfinance In Africa, MFIs are terminal points for transfers, and in general subagent of banks in processing - “Upstreaming” of MFIs into the formal financial ... Leading MFIs are maturing both financially and operationally, in many cases transforming into banks or formal financial institutions They thus integrate into and become...

Ngày tải lên: 08/03/2014, 06:20

... ProQuest Information and Learning Company 300 North Zeeb Road P.O Box 1346 Ann Arbor, MI 48106-1346 Preparation and Functionalization of Macromolecule -Metal and Metal Oxide Nanocomplexes For Biomedical ... of metal or metalloid elements surrounded by various types of ligands Metal alkoxides belong to a family of organometallic compounds which contain an org...

Ngày tải lên: 13/11/2014, 16:16

... NetBust sang vi kiến trúc Core lúc với việc chuyển từ công nghệ 90nm sang công nghệ 65nm Và với hai năm sau, Intel thay đổi công nghệ 65nm công nghệ 45nm với vi kiến trúc Penryn, hai năm sau bạn ... công nghệ High-k 45nm Intel, họ vi xử lý Penryn xây dựng tính mang lại hiệu lượng vi kiến trúc Core với hai bổ xung quan trọng: công nghệ tắt nguồn s...

Ngày tải lên: 13/07/2014, 09:20

... Hình 11: Công bố Intel nghiên cứu công nghệ high – k Phát kiến transistor high- k plus metal gate đột phá quan trọng Mặc dù tiếp tục giảm k ch thước transistor tới 45nm theo công nghệ cũ, không cần ... xuất theo công nghệ sử dụng hoàn toàn Hafnium Hình vẽ thể công nghệ thay Silicon – dioxide vật liệu high k mà Intel làm được: Hình 8: Công nghệ th...

Ngày tải lên: 17/05/2015, 18:10