Self aligned source and drain contact engineering for high mobility III v transistor

... thickness nm Tox Equivalent oxide thickness nm VFB Flatband voltage V Gate voltage V Threshold voltage V RIII -V RNi-InGaAs VG VT or VT' ' xxiii ∆VT Threshold voltage shift V W Contact width μm Weff ... Abstract Self- Aligned Source and Drain Contact Engineering For High Mobility III- V Transistor by ZHANG Xin Gui Doctor of Philosophy – Electrical and Comp...

Ngày tải lên: 09/09/2015, 10:14

... ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR MULTIPLE- GATE TRANSISTORS RINUS TEK PO LEE A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILIOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ... 161 vi Abstract Advanced Source and Drain Contact Engineering for Multiple- Gate Transistors by Rinus Tek Po Lee Doctor of Philosophy − Electric...

Ngày tải lên: 15/09/2015, 21:48

... ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR LOW PARASITIC SERIES RESISTANCE KOH TIAN YI, ALVIN (B.ENG (HONS.), NUS) A THESIS SUBMITTED FOR THE DEGREE OF MASTER ENGINEERING DEPARTMENT ... Annealing on Silicon-Carbon Source/ Drain in MuGFETs 5.2 83 84 Future Work 85 Appendix A: Publication List 86 v Advanced Source/ Drain Contact Engineering For Lo...

Ngày tải lên: 26/09/2015, 11:07

... never be forgotten Thank you for your love and devotion ii High Mobility III- V Compound Semiconductors For Advanced Transistor Applications Acknowledgements i Table of Contents iii Abstract vi ... s V Voltage V Vbase Base voltage of trapezoidal pulse V VDS or VD Drain voltage V VFB Flatband voltage V VGS or VG Gate voltage V VT Threshold voltage V vth The...

Ngày tải lên: 11/09/2015, 10:01

... ADVANCED CONTACT ENGINEERING FOR SILICON, GERMANIUM, GERMANIUM- TIN DEVICES TONG YI (M Eng.), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ... on contact engineering for Si, Ge, and GeSn devices Low contact resistance is needed for advanced Si based devices and also new generation of Ge or GeSn base...

Ngày tải lên: 09/09/2015, 11:07

... SOURCE AND DRAIN EXTERNAL RESISTANCE REDUCTION FOR ADVANCED TRANSISTORS KOH SHAO MING A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTING ... Publications 157 References 161 iv Abstract Source and Drain External Resistance Reduction for Advanced Transistors by Koh Shao Ming Doctor of Philosophy – Electrical...

Ngày tải lên: 09/09/2015, 17:56

... constituent, such as a name, which could lead to boundary errors in tagging English names We have therefore used an alternative method to fetch the source language information for information extraction, ... from using source language information In the nist05 data, we find 1893 named entities in the English NER output (target language part) and 1968 named entities in...

Ngày tải lên: 31/03/2014, 00:20

... are then inserted in h)) ¯ 3.1 The ω−expansion for Hankel n paths Expressing the Hankel n path contact polynomial as a determinant In the case of two or more paths we take as our starting point ... 1≤α,β n (32) Note, determinant (32) is a Hankel determinant as the matrix elements appearing in the determinant only depend on the sum of the row and column in...

Ngày tải lên: 07/08/2014, 08:20

... application of fine- pitch, high- speed wafer- level packaged device testing have been proposed and studied An interposer is needed for the wafer level test because the fine pitch, high pin count, high ... is required for the electrical high speed testing of fine pitch wafer level packaged devices It provides a solution to the required fine...

Ngày tải lên: 04/10/2015, 10:25

... timevarying CO -OFDM channels (S → R), (R → D) as well as the cascaded (S → R → D) channels We approach the channel estimation problem from a time-frequency point of view and employ the channel estimation ... almost the same estimation performance for −40 and 40 dB and obtain better results for GSR /GRD = dB as in the individual channel estimation case We show the BER per...

Ngày tải lên: 21/06/2014, 16:20

... Abstract Contact and Source/ Drain Engineering for Advanced III- V Field- Effect Transistors By Kong Yu Jin, Eugene Doctor of Philosophy – Electrical and Computer Engineering National University ... metallization V Voltage Vd Voltage or bias applied to the drain of a MOSFET Vdd Supply voltage Vg Voltage or bias applied to the gate of a MOSFET Vt,sat Saturation thr...

Ngày tải lên: 30/09/2015, 05:43

... the uniform HCP nanoholes and nanopillars of photoresist for lift-off process, as shown in Fig 5a and b These metal nanoposts and nanoholes can be potentially applied into photonic crystals, and ... and also for further processing using as metal masks Conclusions We have demonstrated a novel maskless and self-aligned sub-wavelength photolithography technique...

Ngày tải lên: 21/06/2014, 22:20

... preprocessing method for both training and decoding in EnglishKorean SMT In particular, we transform a source language sentence by inserting pseudo words and syntactically reordering it to form a target sentence ... sentence length ratio between source sentences and target sentences The largest gain (+2.39) is achieved when the combined pseudo word insertion (PWI) and...

Ngày tải lên: 17/03/2014, 02:20

... Nanotechnology Science & Engineering in Agriculture and Food Systems Food supply can be monitored and protected by using nanotechnology Production, processing and shipment of food products can ... Research at Cornell University”, 1987) A National Planning Workshop: NANOSCALE SCIENCE AND ENGINEERING FOR AGRICULTURE AND FOOD SYSTEMS November 18 – 19, 2002 W...

Ngày tải lên: 18/03/2014, 00:20

... coefficients of these materials to develop MEMS systems, sensors and actuators which can take advantage of the inherent wide band gap (3.4 eV for GaN), chemical and radiation inertness and high temperature ... expandable micro- spheres and conductive polymers are introduced Materials properties, transducer mechanisms and end applications are described and the potential...

Ngày tải lên: 20/03/2014, 13:05