Perpendicular magnetic anisotropy materials for magnetic random access memory applications

... Perpendicular Magnetic Anisotropy Materials for Magnetic Random Access Memory Applications by TAIEBEH TAHMASEBI A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... spin-transfer-torque magnetic random access memory (STT-MRAM) Finally, we also give a brief review on different magnetic materials with perpendicular anisotropy that could be used in...

Ngày tải lên: 09/09/2015, 10:14

... PERPENDICULAR MAGNETIC ANISOTROPY MATERIALS FOR SPINTRONICS APPLICATIONS HO PIN (B Eng (Hons.), NUS) A THESIS SUBMITTED FOR THE DOCTOR OF PHILOSOPHY DEPARTMENT OF MATERIALS SCIENCE ... Recommendations for Future Work 158 References 164 vi SUMMARY Ferromagnetic materials with large perpendicular magnetic anisotropy (PMA) are increasingly investigated for future m...

Ngày tải lên: 10/09/2015, 09:22

... (Conventional Memory) , Bộ nhớ mở rộng (Extended Memory) , Bộ nhớ bành trướng (Expanded Memory) , Vùng nhớ trên(Upper Memory Area), Vùng nhớ cao (High Memory Area) Bộ nhớ quy ước (Conventional Memory) : ... thời chuyển động xuyên qua lớp cách điện IX.Flash Memory Flash memory thật memory (chứa thông tin, đọc xoá được) điển hình cuả memory RAM Do flash memory gọi flash RAM Fl...

Ngày tải lên: 25/04/2013, 19:25

... Phân loại RAM Tùy theo công nghệ chế tạo, người ta phân biệt thành loại:   SRAM (Static RAM) : RAM tĩnh DRAM (Dynamic RAM) : RAM động RAM tĩnh transistor ô nhớ RAM tĩnh RAM tĩnh chế tạo ... nhớ DRAM chậm rẻ tiền SRAM Các loại DRAM Card RAM MB máy tính VAX 8600 sản xuất năm 1986 Các chip RAM nằm vào vùng chữ nhật bên trái bên phải SDRAM (Viết tắt từ Synchronous Dynamic RAM...

Ngày tải lên: 29/07/2014, 03:20

... focuses on the design, synthesis, and characterization of polymeric materials for energy storage applications, which include small molecule electrolyte additives, solid polymer electrolyte, and gel ... numbers of other synthetic polymers were developed and commercialized in response to the growing need for new materials in the automotive and aerospace indu...

Ngày tải lên: 13/11/2014, 11:13

... cathode and anode materials, electrolytes and binders for lithium ion and sodium ion batteries is provided 1.2 Need for electrical energy storage systems The demand for the most dominant form of ... Energy Harvesting and Storage: Materials, Devices, and Applications II, 803503, 2011, DOI:10.1117/12.884460 Nanostructured electrode materials for Li-ion battery...

Ngày tải lên: 08/09/2015, 18:44

... SEMICONDUCTOR MEMORIES 1.2 PHASE CHANGE RANDOM ACCESS MEMORY 1.2.1 Phase- change materials 1.2.2 Principles of Phase change random access memory 10 1.2.3 RESET current ... cost per bit Maturity 1.2 Phase change random access memory 1.2.1 Phase- change materials Phase- change materials can exist in the amorphous or crystalline phases The two phases diffe...

Ngày tải lên: 09/09/2015, 10:07

... 122 v 7.1.1 Multi- level dual layered Phase Change Memory Devices with a NGST/Ta2O5/GST Stack …………………… …122 7.1.2 Multi- level phase change memory devices with Si3 N4 or Ta2O5 barrier layers …………………………………….123 ... of phase change materials for two-bit multi- level devices ………………………………………………… 78 4.4 Chapter Summary ……………………………………………………… 78 Two-bit Multi-...

Ngày tải lên: 10/09/2015, 09:21

... addresses the scaling limitations of the Phase Change Random Access Memory (PCRAM) that is considered as one of the best candidates for meeting the scaling requirements for the next wave of memory ... paid to the physical limitations of the materials and the current limitation of memory cells in subsequent chapters The physical limitations of...

Ngày tải lên: 11/09/2015, 16:04

... investigation Another exploration of high- k dielectrics for SONOS type memory is to use highk dielectrics as charge storage layer instead of nitride The potential advantages of high- k charge storage ... the formation of NCs, device integration, and the memory performance The implementation of high- k dielectric instead of SiO2 brings additional advantage...

Ngày tải lên: 14/09/2015, 13:32

... STUDY OF TaOX- BASED RESISTIVE RANDOM ACCESS MEMORY WU WENJUAN A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ... 1.2.2          Resistive Random Access Memory Working Principle and Switching Modes 6  1.2.3          Classification of Resistive Random Access Memory 7  1.2.3.1 Classification Bas...

Ngày tải lên: 02/10/2015, 17:13

... magnetic recording media 1.2.3 Challenges for current perpendicular magnetic recording media Magnetic recording media of next generation 1.3.1 Heat assisted magnetic recording media 1.3.2 Patterned media ... of magnetic recording media for high areal density 1.1.1 Thermal stability 1.1.2 Signal-to-noise ratio Magnetic recording media 1.2.1 Longitu...

Ngày tải lên: 11/09/2015, 16:02

... DESIGN OF EFFICIENT CONSTRAINED CODES AND PARITY- CHECK CODES FOR PERPENDICULAR MAGNETIC RECORDING CHANNELS MOULAY RACHID ELIDRISSI (B Sc (Hons.), TELECOM INT) A THESIS SUBMITTED FOR THE ... that the design of efficient and powerful codes is key to designing a high-performance PRML system Therefore, our focus in this thesis is to design efficient co...

Ngày tải lên: 04/10/2015, 15:45

... Analytical Approach for Optimum Target Design 39 3.1 Problem of Target Design 3.2 Cost Function for Optimum Target Design ………………………… 42 3.3 Novel Analytical Approach for Designing Optimum Target of Finite ... higher recording densities than the longitudinal one [4, 5] Consequently, the detection strategies need to be re-investigated for perpendicular recording cha...

Ngày tải lên: 08/11/2015, 17:08

... technical translation, so it plays an important role in the development of Mechanical Engineering The thesis studies the English – Vietnamese translation of terms in the materials for Mechanical Engineering ... terms in materials for mechanical engineering Hopefully, the result of the study would be useful in technical translation e...

Ngày tải lên: 07/09/2013, 13:04