MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 10 pot

... 32, pp. 5 7-6 3 (1989). [l5] R. Gharabagi and A. El-Nokali, ‘A charge-based model for short-channel MOS transistor capacitances’, IEEE Trans. Electron Devices, ED-37, pp. 106 4-1 072 (1990). ... conservative MOSFET model’, IEEE Trans. Computer-Aided Design, CAD-7, [14] R. Gharabagi and A. El-Nokali, ‘A model for the intrinsic gate capacitances of short-channel MOSFETYs’,...

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... case permission to photocopy is not required from the publisher. ISBN-13 97 8-9 8 1-2 5 6-8 6 2-5 ISBN- 10 98 1 -2 5 6-8 62-X Disclaimer: This book was prepared by the authors. Neither the Publisher ... available from the British Library. MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electroni...

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... =QV 1 5 10. 5 v) n - 5 1 0-6 3 0 1 0-7 z a 1 0-8 n > [r 1 0-9 1 0-1 0 0.0 1 .o 2.0 3.0 4.0 5.0 GATE VOLTAGE Vgs (V) Fig. 6.17 Device I,, - V,, characteristics in ... form that at first glance appears different. 6.7 Short-Geometry Models 3 - 2- - a 9- W- (7 5 9 1.75 Q t- 6 !I 3 t- 6 fJY 0.5 293 I = 1....

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... 308 3 .O 6 MOSFET DC Model I I 1 I I I pMOST toX = 105 A W,/L, = 10l0.5 v,, = -4 v h c E 4 v U I 1 .o I - -2 v 0.01 -1 - - 7- -1 - - i - I * " ... 6 MOSFET DC Model GATE SAT U R AT 10 N 4 DRAIN 1 L - - - - - - - - - - - D C 0 WY' L 4J-4 Fig. 6...

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... Optimizer 53 1 lo-' 1 0-2 1 0-3 9 lo4 I 0-5 1 0-6 1 lo-' 1 0-2 1 0-3 9 lo4 I 0-5 1 0-6 1 0-7 10& quot; 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 11 Fig. 10. 7 DIBL parameter ... interior of a hyper-ellipsoid in n-dimensional space and p = u produces hypersurfaces of constant probability density. Therefore, if (P - Pt)’C- ’(P...

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... Conduction 35 1 0-4 1 0-3 1 0-2 lo-' 100 10& apos; lo* lo3 lo4 RESlSTlVrrY (n an) Fig. 2.8 Dopant density versus resistivity at 23°C for silicon doped with phosphorous and boron. ... E, for silicon can be modeled using the following polynomial equation [ 151 1.20 6-2 .73 x lOP4T (2.2a) 1.178 5-9 .025 x 1 0-5 T-3.05 x 10p7T2 (2.2b) 1.17+ 1....

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... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1 - F,...

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... PC 10 60 Rpmz Xj to, RS, 30 60 R Rco 18 78 R R," 17 52 R 0.35 y 0.25 50 50 110 3 MOS Transistor Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. ... order expression for Rsp, based on the assumption of uniform doping 128 4 MOS Capacitor I- -t > O O+ -0 .6 1 A1 (p-Si n+ Po~y(p-si) -o-...

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... df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for p+ polysilicon gate) (tax ... (4.15) that (Ei - Ef) I64 4 MOS Capacitor N~ = 3.3 to,=300 A n' POLY-Si GATE p-SUBSTRATE -0 .7 t 0 DATA - MODEL (4.80) Eq. (4...

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... >" ;- I 5 0.4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10& apos;"cm-3 - - - - - W=20 m - f"\L "A&ING - I I 1 ... (a) - - - 16 -3 A Nb=1.71 x 10 cm x Nb = 1.5 6 x 1Ol6c m3 N 4-2 5 x 1 0'6cm-3 0. 3- 2 6 10 I& I8 2 WIDTH (p...

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