MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 10 pot
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 10 pot
... 32, pp. 5 7-6 3 (1989).
[l5] R. Gharabagi and A. El-Nokali, ‘A charge-based model
for
short-channel MOS
transistor capacitances’, IEEE Trans. Electron Devices,
ED-37,
pp. 106 4-1 072 (1990). ... conservative MOSFET model’, IEEE Trans. Computer-Aided Design, CAD-7,
[14] R. Gharabagi and A. El-Nokali, ‘A model for the intrinsic gate capacitances of
short-channel MOSFETYs’,...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx
... case permission to
photocopy is not required from the publisher.
ISBN-13 97 8-9 8 1-2 5 6-8 6 2-5
ISBN-
10
98
1
-2 5 6-8 62-X
Disclaimer:
This book was prepared by the authors. Neither the Publisher ... available
from
the British Library.
MOSFET MODELING FOR VLSI SIMULATION
Theory and Practice
International Series on Advances
in
Solid State Electroni...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx
...
=QV
1
5
10. 5
v)
n
-
5
1 0-6
3
0
1 0-7
z
a
1 0-8
n
>
[r
1 0-9
1 0-1 0
0.0
1
.o
2.0 3.0
4.0
5.0
GATE VOLTAGE Vgs (V)
Fig.
6.17
Device
I,,
-
V,,
characteristics in ...
form that at first glance appears different.
6.7
Short-Geometry Models
3
-
2-
-
a
9-
W-
(7
5
9
1.75
Q
t-
6
!I
3
t-
6
fJY
0.5
293
I
=
1....
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 9 potx
...
308
3
.O
6 MOSFET
DC
Model
I I
1
I
I I
pMOST
toX
=
105
A
W,/L,
=
10l0.5
v,,
=
-4
v
h
c
E
4
v
U
I
1
.o
I
-
-2
v
0.01
-1 -
-
7-
-1 -
-
i
-
I
*
" ...
6
MOSFET
DC
Model
GATE
SAT
U
R
AT
10
N
4
DRAIN
1
L
-
- -
-
- -
-
-
-
-
-
D
C
0
WY'
L
4J-4
Fig. 6...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 14 potx
... Optimizer
53
1
lo-'
1 0-2
1 0-3
9
lo4
I
0-5
1 0-6
1
lo-'
1 0-2
1 0-3
9
lo4
I
0-5
1 0-6
1 0-7
10& quot;
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
11
Fig. 10. 7 DIBL parameter ... interior of a hyper-ellipsoid in n-dimensional space and
p
=
u
produces
hypersurfaces
of
constant probability density. Therefore, if
(P
-
Pt)’C-
’(P...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt
... Conduction
35
1 0-4
1 0-3
1 0-2
lo-'
100
10& apos;
lo*
lo3
lo4
RESlSTlVrrY
(n
an)
Fig.
2.8 Dopant density versus resistivity at 23°C for silicon doped with phosphorous and
boron. ...
E,
for silicon can be modeled
using the following polynomial equation
[
151
1.20 6-2 .73
x
lOP4T (2.2a)
1.178 5-9 .025
x
1 0-5 T-3.05
x
10p7T2 (2.2b)
1.17+ 1....
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 3 docx
...
+ +
pMOST
- -
-
+
terminal voltages as drain-source voltage
Vds(
=
V,
-
VJ,
gate-source voltage
V,,(
=
V,
-
V,),
and bulk-source voltage
vb,(
=
vb
-
Vs).
For
normal
DC ...
2
Basic Semiconductor and
pn
Junction
Theory
The variables
F,,F,
and
F3
are
F,
=-
*bi
[l
-( 1
-
F,)&apos ;-& quot;]
(1
-4
F2
=
(1
-
F,...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc
...
PC
10
60
Rpmz
Xj
to,
RS,
30
60
R
Rco
18
78
R
R,"
17 52
R
0.35
y
0.25
50 50
110
3
MOS
Transistor Structure and Operation
~i
1;
L
6i!
-
-
-
-
-
-
-
-
-
Fig. ... order expression for
Rsp,
based on the assumption of uniform doping
128
4
MOS
Capacitor
I-
-t
>
O
O+
-0 .6
1
A1
(p-Si
n+
Po~y(p-si)
-o-...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx
...
df
Qh
Y
<h
VTO
nMOST p-type
-
+-
+++
pMOST n-type
-
-+ -
(for
metals and
n+
polysilicon
gate)
- -
(for metals and
n+
polysilicon gate)
+
(for
p+
polysilicon gate)
(tax ...
(4.15)
that
(Ei
-
Ef)
I64
4
MOS
Capacitor
N~
=
3.3
to,=300
A
n'
POLY-Si
GATE
p-SUBSTRATE
-0 .7
t
0
DATA
-
MODEL
(4.80)
Eq.
(4...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx
...
>" ;-
I
5
0.4
lY
I
bO.3
195
1'1'1'1'1~1'1'1~
I
-
Nb
=
2
X
10& apos;"cm-3
-
-
-
-
-
W=20
m
-
f"\L
"A&ING
-
I
I
1 ...
(a)
-
-
-
16
-3
A
Nb=1.71
x
10
cm
x
Nb
=
1.5
6
x
1Ol6c
m3
N 4-2 5
x
1
0'6cm-3
0. 3-
2
6
10
I&
I8
2
WIDTH
(p...
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