MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx

... Qb = - cuxY = - cuxY (6 .88 ) Further, since Qi << Qb, we have Q, z Qb, so that Eq. (6.19) becomes Qb Vgb = Vfb + 4ss - CUX Solving Eqs. (6 .88 ) and (6 .89 ) for 4,s ... form that at first glance appears different. 6.7 Short-Geometry Models 3 - 2- - a 9- W- (7 5 9 1.75 Q t- 6 !I 3 t- 6 fJY 0.5 293 I = 1....

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... case permission to photocopy is not required from the publisher. ISBN-13 97 8- 9 8 1-2 5 6 -8 6 2-5 ISBN- 10 98 1 -2 5 6 -8 62-X Disclaimer: This book was prepared by the authors. Neither the Publisher ... Simulation, Kluwer Academic Publisher, Boston, 1 988 . S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, Wien, New-York,...

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... section 6 .8. 3 08 3 .O 6 MOSFET DC Model I I 1 I I I pMOST toX = 105 A W,/L, = 10l0.5 v,, = -4 v h c E 4 v U I 1 .o I - -2 v 0.01 -1 - - 7- -1 - - i - I * ... Divekar and R. I. Dowell, ‘A depletion-mode MOSFET model for circuit simulation , IEEE Trans. Computer-Aided Design, CAD-3, pp. 8 0 -8 7 (1 984 )...

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... Therefore, if (P - Pt)’C- ’(P - PJ = P 2 (10.64) 10.6 Parameter Extraction Using Optimizer 53 1 lo-' 1 0-2 1 0-3 9 lo4 I 0-5 1 0-6 1 lo-' 1 0-2 1 0-3 9 lo4 I 0-5 ... Solid-state Electron., Vol. 18, pp. 16 1-1 68 (1975). [ 38] N. D. Arora and M. Sharma, MOSFET substrate current model for circuit simulation , IEEE Tra...

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... conditions is given by the Fermi-Dirac At 77K ni for silicon is -1 0-2 0cm-3, while at 400K its value is -1 O'*~m-~ 28 2 Basic Semiconductor and pn Junction Theory nonequilibrium condition ... 1 982 and given in many textbooks) by as much as 50% for boron doped p-type silicon. For phosphorous doped n-type silicon the difference is only 1574. Cu...

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... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... heavily doped p+ source and drain regions with 80 Z 4 LL 0 - W/L = to, = V. 3 MOS Transistor Structure and Operation -4 .0 -3 .2 -2 .4 -1 .6...

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... IEEE-IEDM82, Tech. Dig., p. 6 2- (1 982 ). See also R. D. Rung, ‘Trench isolation prospects for application in CMOS VLSI , IEEE-IEDM84, Tech. Dig., p. 57 4-5 78 (1 984 ). pp. 23 8- 2 41 (1 988 ). ... 60 R Rco 18 78 R R," 17 52 R 0.35 y 0.25 50 50 110 3 MOS Transistor Structure and Operation ~i 1; L 6i! - - - - - - -...

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... df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for p+ polysilicon gate) (tax ... simulation of MOS capacitance’, IEEE Trans. Computer-Aided Design, CAD-2, pp. 11 1-1 16 (1 983 ). 23 8- 2 41 (1 988 ). 153 9- 1544 (1990). 26, pp. 36 1...

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... >" ;- I 5 0.4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10'"cm-3 - - - - - W=20 m - f"\L "A&ING - I I 1 ... (a) - - - 16 -3 A Nb=1.71 x 10 cm x Nb = 1.5 6 x 1Ol6c m3 N 4-2 5 x 1 0'6cm-3 0. 3- 2 6 10 I& I8 2 WIDTH (pm)...

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... field in a short-channel MOSFET , Solid-State pp. 11 8- 1 27 (1 989 ). Electron., 30, pp. 50 3-3 11 (1 987 ). [ 78] Y. Omura and K. Ohwada, ‘Threshold voltage theory for short-channel MOSFET model ... pp. 38 4-3 87 (1 981 ). [67] L. A. Akers, M. Sugino, and J. M. Ford, ‘Characterization of the inverse-narrow-width effect’, IEEE Trans. Electron Devices, ED-34, p...

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