MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx

... Eq. (5. 14) Substrate Vfb df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for ... frequency MOS capacitance’, Solid-state Electron., 17, pp. 73 5- 7 42 (1974). ED-32, pp. 61 7-6 21 (I 9 85) . 5. 1 MOSFET with Uniformly Doped Subst...

Ngày tải lên: 13/08/2014, 05:22

... (flat portion between - 0.6 V to - 1.1 V for n-channel device with W/L = 51 0. 25 pm) in C-V data for short-channel devices [90]. Therefore, one can use Eq. (9. 75) to determine AL ... Jakubowski and K. Iniewski, ‘Simple formula for analysis of C-V characteristics of MIS capacitor’, Solid-state Electron., 26, pp. 75 5- 7 56 (1983). [30] D. M. Brown,...

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... transistors and related devices’, IEEE Trans. Electron Devices, ED-23, pp. 65 5- 6 60 (1976); J. D. Meindl, ‘Ultralarge scale integration’, ibid, ED-31, pp. 155 5- 1 56 1 (1984). 1.1 Circuit Design and MOSFETs ... case permission to photocopy is not required from the publisher. ISBN-13 97 8-9 8 1-2 5 6-8 6 2 -5 ISBN- 10 98 1 -2 5 6-8 62-X Disclaimer: This...

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... E, for silicon can be modeled using the following polynomial equation [ 151 1.20 6-2 .73 x lOP4T (2.2a) 1.178 5- 9 .0 25 x 1 0 -5 T-3. 05 x 10p7T2 (2.2b) 1.17+ 1. 059 x 10p5T-6. 05 x 1 0-7 T2 ... 1982 and given in many textbooks) by as much as 50 % for boron doped p-type silicon. For phosphorous doped n-type silicon the difference is only 157 4. Cur...

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... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1 - F,...

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... 18 78 R R," 17 52 R 0. 35 y 0. 25 50 50 110 3 MOS Transistor Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. 3.3 1 Cross-section showing overlap capacitances ... negative number. Similarly for an Al-Si0,-Si(n-type) system, I mrnS = - 0 .51 + 4, (V) n-type Si I which is again a negative number. Th...

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... leads to (5. 39) where g5s is given by Eq. (5. 37). Solving Eqs. (5. 38) and (5. 39) for N,, and using Eq. (5. 36) for X,, yields (5. 40) where q5i is given by Eq. (5. 35) . This value ... 0 .5 0 >" ;- I 5 0.4 lY I bO.3 1 95 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10'"cm-3 - - - - -...

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... (5. 107) which was fitted to the data for the following range of parameters: N,= lo1&apos ;- 10'6cm-3, Xj=0.1 5- 0 .41pm to, = 50 0 A 5 = 4.1. - 8.8. lo-: (5. 108) m = 2.6 - ... field in a short-channel MOSFET , Solid-State pp. 11 8-1 27 (1989). Electron., 30, pp. 50 3-3 11 (1987). [78] Y. Omura and K. Ohwada, ‘Threshold voltage theory...

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... form that at first glance appears different. 6.7 Short-Geometry Models 3 - 2- - a 9- W- (7 5 9 1. 75 Q t- 6 !I 3 t- 6 fJY 0 .5 293 I = 1.31 x 104V/cm a= 1.13 0 - ... Piece-Wise Drain Current Model for Enhancement Devices 269 n MOST V* =QV 1 5 10 .5 v) n - 5 1 0-6 3 0 1 0-7 z a 1 0-8 n > [r 1 0-9...

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... 6 MOSFET DC Model I I 1 I I I pMOST toX = 1 05 A W,/L, = 10l0 .5 v,, = -4 v h c E 4 v U I 1 .o I - -2 v 0.01 -1 - - 7- -1 - - i - I * " 0.0 0 .5 1.0 ... 0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 3 .5 -Vh (VOLTS) (a) 1, = 1 05 A w,,,/L, = 10D. 25 1.0 - 0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 3 ....

Ngày tải lên: 13/08/2014, 05:22