Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 2 pot

... (Cz) Si is plasma-treated for 120 min at 25 0 °C and an- nealed in air for 10 min at temperatures between 25 0 °C and 600 °C. The Raman shift is measured in two spectral regions [22 , 23 ]. At energies ... zone. It reflects a special case of the Shockley-Hall-Read generation recom- Fig. 3.5 Raman shift of H 2 bonds (a) and of Si-H bonds (b) [22 ] 18 3 Nanodefects vacancies can...

Ngày tải lên: 12/08/2014, 02:23

... nanocrystalline 121 – – applications 126 – – characterization 122 – – production 121 – porous 34 silicon gap 100 silicon-on-insulator 21 5, 22 6 silicon-on-oxide 33, 62 silicon-on-sapphire ... tunneling 74, 22 8 – transmission electron 130, 137, 187 microwave integrated circuits 21 7 microwave oscillator 21 5, 21 7 Miller indices 125 millipede memory 23 1 mini-band...

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... active layer, e.g., n-type on p-type substrate, silicon-on-sapphire (SOS), and silicon-on- oxide (SOI). The latter includes versions like (i) oxygen implantation and SiO 2 formation, (ii) deposition ... and after lifetime shortening (left curve) Fig. 3.19 Formation of a p-n junction through thermal donors [30]. 2- step process 3.3 .2 Formation of Thermal Donors Since the sixties...

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... and \ are plotted. The transformation of ' and  \ to H is given by ¸ ¸ ¹ · ¨ ¨ © §    2 222 1 2 1 2 1 )cos2sin1( )sin2sin2(costan 1sin ǻ ǻ \ \\M MH and (4 .24 a) 2 1 2 1 2 2 )cos2sin1( sin4sintansin ǻ ǻ \ \MM H  ... 3.0 10 17 10 18 10 19 10 20 120 min 1000 °C / H 2 [H] [O] Concentration, cm - 3 De p th ,µ m 0.0 0.5 1.0 1.5 2. 0 2. 5 3.0 10 17...

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... background lumi- nescence is reduced as well. A detailed overview of the Raman modes observed in zeolites is given in [164]. 146 7 Nanostructuring 1 .25 1.50 1.75 2. 00 2. 25 2. 50 2. 75 3.00 3 .25 3.5 1.75 5 5 ... state-of-the-art in semiconductor technology. Here, SiO 2 and Si 3 N 4 are removed in general by fluorine-containing gases (CF 4 , C 2 F 6 , CHF 3 ), while etched a...

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... Procedures 165 Fig. 7 .22 Comparison of the line scan and vector scan procedure Fig. 7 .23 Cross-sectional view of the electron-optical column of an electron-beam writer (according to [22 8]) Although ... irregularities and the focus position, holds: N A DOF 2 O kr (7 .2) k 1 and k 2 are pre-factors which take into account both the entrance opening of the lenses and the c...

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... remain depleted be- tween the p and n regions. Therefore, a p-type line in a n-type area (e.g., a two- dimensional electron gas; 2DEG) works like two lateral anti-serial switched di- odes. Thus, ... ability to pre- pare patterns of a size of 6 nm [25 2]. Our own work [25 9, 26 2] has shown that the method is able to reproduce a broad range of pattern sizes (see Figs. 7.37–7.40) and that...

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... Year 1999 20 00 20 01 20 02 2003 20 04 20 05 20 08 20 11 20 14 Technology, nm 180 130 100 70 50 35 DRAM, nm 180 165 150 130 120 110 100 70 50 35 MPU-Gate, nm 140 120 100 90 80 70 65 45 32 22 Lithography ... KrF- RET ArF ArF- RET F 2 F 2 - RET EUV IPL EPL EUV IPL EPL 7.7 Near-Field Optics 197 in the proximity of the aperture. The light transmitted by the sample i...

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... TTL, CMOS, and ECL technologies (from [319]) Logical function TTL CMOS ECL RTD bistable XOR 33 16 11 4 9-state memory 24 24 24 5 NOR2 + flip-flop 14 12 33 4 NAND2 + flip-flop 14 12 33 4 9.5 ... 10 .2 Tredicucci et al. [340] GaInAs/AlInAs MQW (Fabry-Perot) CW 75 mW (25 K) CW 8 mW (80 K) 11.1 Anders et al. [341] (20 02) GaAs/AlGaAs MQW (Fabry-Perot) pulsed 75 mW (78 K) p...

Ngày tải lên: 12/08/2014, 02:23