materials devices and techniques
Nanotechnology and Nanoelectronics Materials, Devices, Measurement Techniques ppt
... (Editor) Nanotechnology and Nanoelectronics Materials, Devices, Measurement Techniques With 218 Figures 4y Springer Prof Dr W R Fahrner University of Hagen Chair of Electronic Devices 58084 Hagen ... Gabor, Dr J A Weima, and Mrs K Meusinger for scientific contributions, fruitful discussions, technical assistance, and drawings Furthermore, I am obliged to my son Andreas and my daughter Stefanie, ... Procedure and Results .195 7.6.2 Evaluation and Future Prospects 195 7.7 Near-Field Optics (W R FAHRNER) 196 7.7.1 Description of the Method and Results 196 7.7.2 Evaluation and Future...
Ngày tải lên: 27/06/2014, 06:20
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 14 pdf
... Lasers and Applications IEEE J Select Topics Quantum Electron, vol 6, p 931 Liu HC (2000) Quantum Well Infrared Photodetector Physics and Novel Devices In: Crandall BC (ed) Semiconductors and Semimetals ... High performance InP Gunn devices with 34 mW at 193 GHz Electron Lett, vol 38, p 92 Teng SJ, Goldwasser RE (1989) High-performance second-harmonic operation Wband Gunn devices IEEE Electron Dev ... Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies Appl Phys Lett, vol 81, p 1543 Soref RA, Friedman L, Sun G (1998) Silicon intersubband lasers Superlattices and...
Ngày tải lên: 12/08/2014, 02:23
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 2 pot
... a good number of devices such as lasers, resonant tunneling devices or single-electron transistors They will be treated in the section on electrical nanodevices 2.6 Evaluation and Future Prospects ... efforts in order to improve their materials This particularly applies to “new” materials such as SiC, BN, GaN, and diamond Nonetheless, research on Si, Ge, and GaAs continues The production of ... measured and analyzed is given in Figs 3.11 and 3.12 [27] Fig 3.11 Doping and generation rate profiles after phosphor implantation [27] Fig 3.12 (a) Generation rate profiles (full curves) and doping...
Ngày tải lên: 12/08/2014, 02:23
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 3 pdf
... silicon-on-sapphire (SOS), and silicon-onoxide (SOI) The latter includes versions like (i) oxygen implantation and SiO2 formation, (ii) deposition of amorphous Si on SiO2 and recrystallization, and (iii) wafer ... Both sections can be produced with standard silicon technology (ii) Porous silicon Chemical and electrochemical etching [36 and literature quoted therein] and ion implantation [37] are used for ... Evaluation and Future Prospects Ever it has been possible to grow suitable semiconductor materials for electronic devices, the defects contained in the material have been regarded as hostile and harmful...
Ngày tải lên: 12/08/2014, 02:23
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 5 doc
... and the two-probe measurement is applied Here, the feed current and the applied voltage are measured in only one pair of points A correction factor between V / I and is also needed The pros and ... dielectric function rather than and are plotted The transformation of and to is given by sin sin 2 1 tan (cos 2 sin 2 sin ) (1 sin cos ) tan sin sin (1 sin cos ) and (4.24a) (4.24b) An example ... The correction factor between V / I and must be determined by the potential theory or by comparative measurements The current and voltage distributions and thus the correction factor depend...
Ngày tải lên: 12/08/2014, 02:23
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 8 pptx
... The bands of the disordered graphite and the amorphous diamond-like carbon are now closer together than beforehand Further polishing results in the Raman spectrum of Fig 7.8d The diamond line and ... physical/chemical etching procedure For many applications, both the PE and the RIE meet the demand of the etching rate and the selectivity between the materials However, a sufficient anisotropy of the etching ... various metals such as Pt, Pd, Ag, Ni, semiconducting sulfides, and selenide of Zn, Cd, and Pb or oxides such as ZnO, CdO, SnO2 ([168] and references quoted therein) The host lattice works like a...
Ngày tải lên: 12/08/2014, 02:23
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 9 doc
... irregularities and the focus position, holds: DOF k2 NA (7.2) k1 and k2 are pre-factors which take into account both the entrance opening of the lenses and the coherency degree of the light, and the ... direct and thus more effective transformation of the electrical energy into light, a simple, more compact, and concomitantly low-priced setup, and a reduced debris problem Thus, at the Sandia ... manufacturing plants and research institutes use the expensive projection exposure as wafer scan, step and repeat or step scan procedure which also enables a small defect density and thus a high yield,...
Ngày tải lên: 12/08/2014, 02:23
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 10 pptx
... Dimming and deflecting voltages can range from some 10 to some 100 V and must be available as a wide-band (MHz to GHz) in order to achieve high dose accuracies and writing rates Navigation and Joining ... Sample Transfer and Compatibility to Other Process Steps FIB systems have been manufactured as ultrahigh vacuum (UHV) devices worldwide in some hundred copies The cut -and- see high vacuum devices have ... metal atoms on the one hand and remain volatile after the “cracking” on the other hand An example is tungsten hexacarbonyl, W(CO)6, which is present as a white powder under standard conditions By...
Ngày tải lên: 12/08/2014, 02:23
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 11 ppt
... technology and alignment concepts UV molding and SFIL Development of production equipment and process technology for SFIL is pushed in intense cooperation between research institutes and industry ... us enormous hope for the diagnosis and therapy of diseases 8 Extension of Conventional Devices by Nanotechniques 8.1 MOS Transistors The ever progressing and seemingly unstoppable miniaturization ... W = 100 µm, and tox = 4.5 nm Fig 8.2 Measured input characteristics of an NMOS transistor with L = 50 nm, W = 100 µm, and tox = 4.5 nm 206 Extension of Conventional Devices by Nanotechniques Fig...
Ngày tải lên: 12/08/2014, 02:23
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 12 docx
... between 10 and 300 MHz [382] 9.5 Carbon Nanotube Devices 9.5.1 Structure and Technology The nanoelectronic devices presented so far are based on the “classical” materials silicon and III-V compounds ... 9.2 Conduction band diagram and current-voltage characteristics at 77 and 300 K of an AlAs/InGaAs RTD (from [304]) characteristics suggest both bistable and astable applications, and, indeed, the ... because of lower costs and the possibility of integrating them with VLSI silicon ICs As an example, the schematic structure and band diagram of an RTD with silicon quantum wells and CaF2 barriers...
Ngày tải lên: 12/08/2014, 02:23
GREEK SCULPTURE: FUNCTION, MATERIALS, AND TECHNIQUES IN THE ARCHAIC AND CLASSICAL PERIODS pot
... Function, Materials, and Techniques in the Archaic and Classical Periods Edited by Olga Palagia Frontmatter More information GREEK SCULPTURE egh FUNCTION, MATERIALS, AND TECHNIQUES IN THE ARCHAIC AND ... Function, Materials, and Techniques in the Archaic and Classical Periods Edited by Olga Palagia Frontmatter More information vi efh Contents VIII Greek and Roman White Marbles: Geology and Determination ... specialized in the study of Greeks and Greek culture overseas, burial customs, and in ancient gems and finger rings He has written several handbooks on Greek vases and sculpture and more generally on Greek...
Ngày tải lên: 23/03/2014, 11:21
industrial heating principles techniques materials applications and design dekker mechanical engineering
... Understanding Gear Noise, J Derek Smith Chains for Power Transmission and Material Handling: Design and Applications Handbook, American Chain Association Corrosion and Corrosion Protection Handbook, ... Selection and Application, Duane Tandeske Zinc Handbook: Properties, Processing, and Use in Design, Frank Porter Thermal Fatigue of Metals, Andrzej Weronski and Tadeusz Hejwowski Classical and Modern ... Revised and Expanded, Earl Logan, Jr Vibrations of Shells and Plates: Second Edition, Revised and Expanded, Werner Soedel Steam Plant Calculations Manual: Second Edition, Revised and Expanded,...
Ngày tải lên: 02/04/2014, 15:28
Optoelectronics Materials and Techniques Part 1 pptx
... various optoelectronic and photonic materials and techniques and would like to thank to the authors for their wonderful efforts Stake holders of the ongoing optoelectronic and photonics revolution ... related materials and techniques Photonics and optoelectronics are making an impact multiple times the semiconductor revolution made on the quality of our life In telecommunication, entertainment devices, ... devices, computational techniques, clean energy harvesting, medical instrumentation, materials and device characterization and scores of other areas of R&D the science of optics and electronics get...
Ngày tải lên: 19/06/2014, 11:20
Optoelectronics Materials and Techniques Part 2 pptx
... differences in density of the black area and the contrast between the black area and the white one from the PS layers (Figures 6a and 6c) and SRSO layers (Figures 6b and 6d) Those differences suggest ... solution 36 Optoelectronics - Materials and Techniques and by using the current density in the ECD method For the purpose of obtaining highconcentration Er-doped SRO materials (more than 0.1 atomic ... chemical bonding, diffusion and vibrations, and are difficult to study both experimentally and theoretically However, the microscopic details of disordering, hydrogen migration and bonding within the...
Ngày tải lên: 19/06/2014, 11:20
Optoelectronics Materials and Techniques Part 3 docx
... according to the Mott and Davis model (Mott and Davis, 1979) The mobility edges of both the conduction- and valence-band are depicted by EC and EV respectively The tails of these bands are considered ... technology The need for such device was (and is) the main reason for theoretically (ab initio 56 Optoelectronics - Materials and Techniques theories) and experimentally investigations of SiOx ... constituents The phonons are characterized by energy and momentum (impulse) 60 Optoelectronics - Materials and Techniques as long as the lattice and the collective movement of the atoms (ions) exists...
Ngày tải lên: 19/06/2014, 11:20
Optoelectronics Materials and Techniques Part 4 docx
... VRH model (Brottger and Bryksin, 1985) They have defined the concept of the “directed percolation” and averaged the hopping probability as: 82 Optoelectronics - Materials and Techniques ⎛ ⎞ e E⋅R ... the capacity parameters (C0 and β) and the assigned RC-time for various SiOx samples when U=5V constant voltage pulse is applied 86 Optoelectronics - Materials and Techniques -7 Qrel (C) 10 0.59 ... levels, where two are the HOMO and LUMO nano-crystal bands’ edges and the third level is an instable energy level placed into the band-gap region (between LUMO and HOMO levels) Let it to be called...
Ngày tải lên: 19/06/2014, 11:20
Optoelectronics Materials and Techniques Part 5 pot
... Advanced Materials, Vol 20, No 11, pp 2162-2165 132 Optoelectronics - Materials and Techniques Liu,L., & Edgar, J.H (2002) Substrates for gallium nitride epitaxy Materials Science and Engineering, ... and Related Materials, Pearton, S.J., pp 85-139, Gordon and Breach Science Publications, The Netherlands Morkoc, H., Strite, S., Gao, G B., Lin, M E., Sverdlov, B., & Burns, M (1994) Large-bandgap ... not perfectly arranged, and misorientation of crystal grains occur in both a- and c- axes due to fast surface migration and clustering of atoms The stacking faults, edge and mixed dislocations...
Ngày tải lên: 19/06/2014, 11:20
Optoelectronics Materials and Techniques Part 6 ppt
... thereby satisfying both energy and See Mani et al (2009a) for detailed growth procedures and X-ray and optical characterizations 142 Optoelectronics - Materials and Techniques Will-be-set-by-IN-TECH ... 140 Optoelectronics - Materials and Techniques Will-be-set-by-IN-TECH Γ is a phenomenological damping rate Equations (1) and (2) denote the photonic and excitonic parts of a polariton ... Optoelectronics - Materials and Techniques Will-be-set-by-IN-TECH 12 glass and the superfluid He bath When the quadrupole polariton wave leaves Cu2 O, it is converted into transmitted light and a portion...
Ngày tải lên: 19/06/2014, 11:20
Optoelectronics Materials and Techniques Part 7 pptx
... views (Ti plate (a); foil (b)) and bottom side views (Ti plate (c); foil (d))] and XRD patterns [Ti plate (e and g) and Ti foil (f and h)] of anodized Ti plate and Ti foil Figure 11(e-h) shows ... (110), (111) and 174 Optoelectronics - Materials and Techniques (211) peaks indicate that the nanostructured titanium dioxide film is highly oriented with respect to the substrate surface and the ... Optoelectronics - Materials and Techniques shown in Fig 8; the X-ray diffraction patterns showed two different orientations, i.e., (400) and (222) on different substrates, i.e., glass and clay, respectively...
Ngày tải lên: 19/06/2014, 11:20