Engineering Materials and Processes phần 7 ppsx
Engineering Materials and Processes phần 7 ppsx
... samples were tested for both test configurations (samples A, B, C, and D for bare Ag patterns, and samples A′, B′, C′, and D′ for and NH 3 - annealed Ag patterns). The average of four failure times ... Silver Electromigration Resistance 79 For all tested Ag lines, which were encapsulated by TiN(O), no partial depletion area and no significant number of voids and hillocks were...
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Engineering Materials and Processes phần 9 ppsx
... Alford, S. S. Lau, F. Deng, T. Laursen and B. M. Ullrich, J. Appl. Phys. 81, 77 73(19 97) . [19] B. A. Julies, D. Knoesen, R. Pretorius, D. Adams, Thin Solid Films 3 47, 201(1999). [20] M. M. Mitan, ... (w~1:1) and Ti 5 Si 3 , the reaction products from the Ti–SiO 2 reaction [7] . 7 Summary 7. 1 Introduction This monograph reviews bilayer and alloy tec...
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Engineering Materials and Processes phần 1 doc
... 113 7. 2 Thermal Stability: Diffusion Barriers and Self-encapsulation … … 113 7. 3 Electromigration Resistance …………………………………………. 1 17 7. 4 Future Trends ………………………………………………… ……. 118 7. 5 References ... and technologists in the field of integrated circuits and microelectronics research and development. The content of the monograph is an indirect result of extensive and...
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Engineering Materials and Processes phần 2 pptx
... RBS and Auger electron spectroscopy (AES). The RBS analysis was performed using 1 .7 MV Tandem Accelerator with He +2 beam energies between 2.0 and 4.3 MeV. The backscattering angle was 170 ° and ... orders of magnitude and provide high sensitivity to the analysis of oxygen and carbon in silicon. The use of these high energies, 3.05 and 3 .7 MeV for the helium-oxygen and...
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Engineering Materials and Processes phần 3 docx
... oxygen content and composition of the TaN films. The 3.0 MeV and 3 .7 MeV beam energies correspond to oxygen (O) and nitrogen (N) resonances, respectively, and were used to detect O and N. The 3.0 ... between Ag and H 2 S. Figure 3 .7. Schematic showing the nitridation and evolution of the corrosion process of a Ag(19 at.% Ti) alloy. At 600°C, in NH 3 , the Ti forms TiN...
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Engineering Materials and Processes phần 4 pptx
... S. Chen, J. Appl. Phys. 87, 8 473 (2000). [19] M. Stavrev, D. Fischer, C. Wenzel, K. Drescher and N. Mattern, Thin Solid Films 3 07, 79 (19 97) . [20] C. Chang, J. S. Jeng, and J. S. Chen, Thin Solid ... 523(1991). [ 17] Joint Committee for Powder Diffraction Standard (JCPDS ICDD cards #: 25-1280, 26-0985, 32-1282, 25-1 278 , 14-0 471 , 31-1 370 , & 32-1283), PDF Database, 199...
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Engineering Materials and Processes phần 5 pptx
... 3 .7 MeV He +2 ion beam, 7 incident angle, and 172 ° scattering angle were primarily used for analyzing silver and dielectric interaction and thickness measurements. The beam energy of 3 .7 ... dielectric constant, the materials must have a good adhesion to silicon and to interconnect materials and thermal stability. Thermal stability is important to device characteristi...
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Engineering Materials and Processes phần 6 doc
... Deng, T. Laursen, and B. M. Ullrich, J. Appl. Phys. 81, 77 73(19 97) . [ 17] Y. Zeng, T. L. Alford, Y. L. Zou, A. Amali, B. M. Ullrich, F. Deng, and S.S. Lau, J. Appl. Phys. 83, 77 9(1998). [18] ... Zeng, Y. L. Zou, T. L. Alford, F. Deng, S. S. Lau, T. Laursen, and B. Manfred Ullrich, J. Appl. Phys. 81, 77 73(19 97) . [15] CRC Handbook of Electrical Resistivities of Binary M...
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Engineering Materials and Processes phần 8 pdf
... of the bonding between the two materials, Au and silicon. On the other hand, the type of ambient gas, alters the surface properties of the metal upon absorption and results in an increase or ... is the temperature and k b is Boltman’s constant. R is a constant, which accounts for the chemical effects between the trapped Al and Ag; depends on the diffusion process and was chose...
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Engineering Materials and Processes phần 10 pptx
... the anode for the temperature range 670 – 877 °C. Klotsman et al. [13] and Breitling and Hummel [14] however, found that Ag ion transport is toward the cathode, and is opposite to the direction of ... (e.g. grain size and texture); (2) contamination control (C, O and CI); (3) oxidation and corrosion control; (4) prevention of Ag diffusion in metals and dielectric materials;...
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