Optoelectronics Materials and Techniques Part 9 potx

... Scherf, U. ( 199 9). Ladder-type materials. J. Mater. Chem., Vol .9, No .9, (September 199 9) pp.1853-1864, ISSN 095 9 -94 28. Segalman, R. A.; McCulloch, B.; Kirmayer, S. & Urban, J. J. (20 09) . Block ... NaN(SiMe 3 ) 2 and FeCl 2 provided the ferrocene-stacked polymer P 19 with an M n of 18400 (Nugent & Rosenblum, 199 3; Rosenblum et al., 199 5; Hudson et al., 199 9). T...

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... Distribution Function of crystalline silicon (left) and amorphous silicon (right) [From: Laaziri et al., 199 9] Optoelectronics - Materials and Techniques 10 3. The role of hydrogen in a-Si:H ... level, etc.) and in the dynamics of creation and annealing of defects. For instance, early infrared spectroscopy (Jeffrey et al. 197 9; Knights & Lujan, 197 9; Zanzucchi...

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... Nelson, B.P., ( 199 3) Phys. Rev. B Vol. 47, 7061. Branz, H.M. ( 199 9) Phys. Rev. B Vol. 59, 5 498 . Branz, H.M., Asher, S.E., Gleskova, H., Wagner S., ( 199 9) Phys. Rev. B Vol. 59, 5513. Bruno, ... C.C. ( 199 3) Phys. Rev. B, Vol. 47, 99 93. Jeffrey, F.R., Shanks, H.R., Danielson, G.C. ( 197 9) Appl. Phys. Lett. Vol. 50, 7034. Kasap, S. (2005) Principles of Electronic Materials...

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... Canham, 199 1; Wolkin et al., 199 9), super-lattices of Si/SiO 2 (Zu et al., 199 5) , silicon nano-pillars (Nassiopoulos et al., 199 6), silicon nanocrystals embedded in SiO 2 (Wilson et al., 199 3) ... J., Fauchet, P.M. ( 199 9). Electronic states and luminescence in porous silicon quantum-dots: the role of oxygen. Phys. Rev. Lett. 82, 197 -200 Optoelectronics - Materials and...

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... & Delerue, C. ( 199 9). Electronic states and luminiscence in porous silicon quantum dots, Phys. Rev. Lett. 82, pp. 197 -200 Optoelectronics - Materials and Techniques 94 separation, the ... - Materials and Techniques 98 van Hapert, J.J. (2002). Hopping conduction and chemical structure - a study on silicon suboxides, PhD Thesis, Utrecht University ISBN 90 -...

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... 199 2; Maruska & Tietjen, 196 9; Perlin et al., 199 5; Boguslavski et al., 199 5; Kim et al., 199 7). However, there are conflicting arguments from some researches. For instance, Neugebauer and ... -treated GaN surface and Optoelectronics - Materials and Techniques 124 continuous layer (Chen et al., 199 9). Epitaxial lateral overgrowth and its derivatives pendeo- epi...

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... zinc, selenium and iodine compounds were taken in an evacuated sealed quartz ampoule under a vacuum of 4 × 10 -3 Pa. High purity zinc (99 .99 9 %), selenium (99 .99 9 %) and iodine (99 .99 %) were used ... al., 199 1; Jeon et al., 199 1). Nowadays there is a concentrated effort to produce high quality p-type zinc selenide based blue laser diodes (Drechsler et al., 199 7; Fung et al....

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... behaviour of azobenzene polymers appeared in 199 5 (Rochon et al., 199 5; Kim et al., 199 5) and the phenomenon was accurately investigated (Viswanathan et al., 199 9). These structures behave as holographic ... Vol. 195 , (May 2010), pp. 298 9- 299 5, ISSN 0378-7753 Ullrich, B. ( 199 8). Comparison of the photocurrent of ZnSe/InSe/Si and ZnSe/Si heterojunctions. Mater. Sci. Eng. B...

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... a bulky group, (Klaerner et al., 199 8, 199 9; Setayesh et al., 2001) a crosslinkable moiety (Chen et al., 199 9) or a charge-transporting moiety.(Yu et al., 199 9) The third method is to prepare ... the similar strategy. OC 4 H 9 OC 4 H 9 C 4 H 9 O C 4 H 9 O OCH 3 OH OC 4 H 9 OC 4 H 9 C 4 H 9 O C 4 H 9 O OCH 3 O OC 4 H 9 OC 4 H 9 OC 4 H 9 OC 4 H 9 O H 3 CO R= R...

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... 0024 -92 97. Mayo, S. L.; Olafson, B. D., & Goddard, W. A. ( 199 0). Dreiding-A Generic Force-Field for Molecular Simulations. Journal of Chemical Physics, Vol. 94 , No. 26, pp. 8 897 - 890 9, ISSN ... Atomistic to the Mesoscopic Scale and Back. Chemphyschem, Vol. 3, No. 9, pp. 754-7 69, ISSN 14 39- 4235. Nguyen, T. Q.; Doan, V., & Schwartz, B. J. ( 199 9). Conjugated Polym...

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