Optoelectronics Materials and Techniques Part 2 pptx

... A 2 ' A 2 B 2 ' B 2 n L A 2 ' A 2 B 2 ' B 2 n 0 A 0 B 0 x 0 x 3 x 2 x 4 x m x m+1 x m-1 x 2N-4 x 2N-3 x 2N -2 ... J 3 = 0 8.0 Series No .2 12 J 1 = 50 mA.cm -2 3. 625 J 2 = 15 mA.cm -2 6.349 J 3 = 0 8.0 Series No.3 12 J 1 = 50 mA.cm -2 2. 653 J 2 = 15 mA.cm -2 5....

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... opto-electronic properties (Costea et al., 20 00; Gaspari et al., 20 00; Kherani et al., 20 08; Kosteski et al., 20 00, 20 03, 20 05; Zukotynski et al., 20 02) . Optoelectronic Properties of Amorphous ... Optoelectronics - Materials and Techniques 18 The stretched exponential behaviour has also been investigated, among others, by Morigaki & Hikita (20 07) and...

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... is observed at 2 of 27 .37°, assigned to (110) plane. Other rutile peaks are observed at 2 of 36.10° (101), 41 .26 ° (111), 44.01° (21 0), 54.36° (21 1), 56.59° (22 0), 62. 92 (0 02) and 64.10° (310). ... 2 -1.0x10 -6 -5.0x10 -7 0.0 5.0x10 -7 1.0x10 -6 1.5x10 -6 2. 0x10 -6 2. 5x10 -6 0.0 0.5 1.0 1.5 2. 0 2. 5 -26 -24 -22 -20 -18 -16 -14 - 12 Ln(I) (A) V (volt) 305 K 31...

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... chloroform and toluene. Log (number of monomers) 1. 92. 02. 12. 22. 32. 42. 52. 62. 72. 8 Log (ETE) 1 .2 1.4 1.6 1.8 2. 0 2. 2 2. 4 MEH-PPV / Toluene MEH-PPV / Chloroform ± ± slope = 0. 32 0. 02 slope = ... 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 Z X Y M(50)/C 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 Z X Y M(50)/T 0 5 10 15 20 25 0...

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... the band-gap is, according to O’Leary et al., 1997: 32 23 2 2 () 1 exp exp 22 2 CC e C C C EE EE m gE EE EE γ γγ π γ ⎧ −≥+ ⎪ ⋅ ⎪ =⋅ ⎨ ⎛⎞ − ⎛⎞ ⎪ ⋅−⋅ <+ ⎜⎟ ⎜⎟ ⎪ ⎝⎠ ⎝⎠ ⎩ = 32 23 2 2 () 1 exp ... will generate the so-called “Cody band-gap”, E gC : () () 2 gC CE αω ω ω =⋅ −= = (22 ) with C the Cody coefficient. From relations (21 ) and (22 ) the band gap of the semic...

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... 1999a; Edgar & Liu, 20 02; Parmer, 20 08; Harima, 20 02; Levinshtein et al., 20 01; Nakamura & Chichibu, 20 00; Henini & Razeghi, 20 05). 2. Crystal defects 2. 1 General classification ... substrate/GaN interface and propagate into the epilayer. Optoelectronics - Materials and Techniques 82 BB eR ε w~exp 2 Rcosθ kT 2kT ⎛⎞ ⋅ −⋅+ + ⋅ ⎜⎟ ⎜⎟ ⎝⎠  E (27...

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... U.K. Optoelectronics - Materials and Techniques 1 32 Liu,L., & Edgar, J.H. (20 02) . Substrates for gallium nitride epitaxy. Materials Science and Engineering, Vol. 37, pp. 61– 127 . Łucznik, ... (Sakai et al., 20 00). Optoelectronics - Materials and Techniques 126 Furthermore, based on the studies by researchers (Tadatomo et al., 20 01; Yamada et al....

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... position Z and given by I 0 (Z, t)= 2P(t) πω 2 (Z) → 2P πω 2 (Z) = 2P πω 2 0 (1 + Z 2 /Z 2 0 ) , (11) where P (t) is the input pulse power with a 30 ps temporal profile and Z 0 = πω 2 0 /λ  0.06 ... Acad. Sci. U.S.A. 105, 422 . Petroff, Y. P.; Yu, P. Y. & Shen, Y. R. (1975). Study of photoluminescence in Cu 2 O, Phys. Rev. B 12, 24 88. 1 62 Optoelectronics - Materi...

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... o C NH CH 2 CH 2 CH 2 Si HN CH 2 CH 2 CH 2 Si C 2 H 5 O OC 2 H 5 CH 3 CH 3 C 2 H 5 O OC 2 H 5 NH CH 2 CH 2 CH 2 Si CH 3 HO OH NH CH 2 CH 2 CH 2 Si HO OH CH 3 O C C O O NH CH 2 CH 2 CH 2 Si CH 3 HO O NH CH 2 CH 2 CH 2 Si HO O CH 3 O C C O O N CH 2 CH 2 CH 2 Si CH 3 O OH NH CH 2 CH 2 CH 2 Si O OH CH 3 O C C O O N CH 2 CH 2 CH 2 Si C...

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... 9 : 2 P1a 79 5956 4100 2 5 : 4 : 2 P1b 65 30 82 3100 3 3 : 2 : 1 P1c 50 1933 21 00 4 10 : 9 : 2 P2a 70 5896 7500 5 5 : 4 : 2 P2b 50 3 022 420 0 6 3 : 2 : 1 P2c 65 18 72 2600 ... Macromol. Rapid. Commun., Vol .29 , No.14, (July 20 08) pp. 125 9- 126 3, ISSN 1 022 -1336. Optoelectronics - Materials and Techniques 24 2 Scheme 4. Synthesis...

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